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Investigation of Optical Performance of
InGaN MQW LED With Thin Last Barrier
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IEEE PHOTONICS TECHNOLOGY LETTERS,
VOL. 22, NO. 24, DECEMBER 15, 2010
Y.T.Huang
Outline
Introduction
Experimental
Results and Discussion
Conclusions
References
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Introduction
This paper is use the thinner last barrier to improve LED optical performance ,
The experiment is to use 12-nm and 9-nm last barrier to compare their power,
distribution of hole concentrations and IQE.
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Experimental
P-contact
10 pairs 2nm InGaN
11 pairs 12nm GaN
P-GaN(Mg)
0.5um
Al0.1Ga0.9N
10nm
MQW
152nm
N-GaN(Si)
N-contact
4um
u-GaN
Sapphire
Sapphire
Sapphire
4
3um
Results and Discussion
Power & forward voltage
Fig. 1. Optical power and forward voltage as a function of current density
when the last barrier thicknesses of the InGaN LED are 12 and 9.6 nm.
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