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Enhanced Performance of Nitride-Based
Blue LED With Step-Stage MQW Structure
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 5, MARCH 1, 2011
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Y.T.Huang
Outline
Introduction
Experimental
Results and Discussion
Conclusions
References
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Introduction
In this work, the previously mentioned constant-indium-doped EIL
is further replaced by a step-stage MQW structure to improve the
performance of InGaN/GaN LEDs. In step-stage MQWs, one set of
indium-stepwise-doped MQW structure is used.
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Experimental
P-contact
Well: 5 pairs 3nm InGaN
Barrier:5 pairs 7nm Si-GaN
P-GaN
0.2um
6 pairs In0.25Ga0.75N/GaN
MQW
A : Dual-stage
B : Step-stage
InGaN/GaN EIL
N-contact
N-GaN 1um
u-GaN
Sapphire
Sapphire
GaN-uncleation
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1um
Results and Discussion
Temperature & Normalized PL Intensity
Fig. 2. Normalized PL intensity of single-, dual-, and step-stage MQW structures.
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