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Introduction
• The configuration of InGaN/GaN MQWs plays a key role in the
internal quantum efficiency(IQE) of LEDs.
• In the MQW, the carriers must effectively increase the concentration
and uniformly spread across all quantum wells to improve the IQE.
• In this study, we aimed to demonstrate the light output power
enhancement of thick well short-period MQW LEDs with thicknessfluctuated InGaN well.
• The effects of thick well short-period InGaN/GaN MQW LEDs with
thickness-fluctuated InGaN well on the electrical and optical
properties of GaN-based LEDs, as well as the fabrication process,
are discussed.
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Chip size :
230 * 440 μm2
Experiments
p- pad
ITO
100 nm
Mg-doped p-GaN
20 nm
Mg-doped AlGaN
InGaN/GaN MQW
20 periods
1.3/1.8 nm
9 periods Well/Barrier (nm)
InGaN/GaN superlattices
LED I (Ref)
2/12
LED II
4/4
LED III
4/4 with N2
n- pad
2 μm
2 μm
1050 ℃
30 nm
560 ℃
Si-doped n-GaN
un-GaN
GaN nucleation layer
c-plane sapphire
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