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Introduction
• For UV LEDs, InN mole fraction in the InGaN well is lower than
that for blue or green LEDs, so the radiative efficiency of such
LEDs is more sensitive to the threading dislocation density.
• In this study, we analyzed the detailed physical mechanisms for
EL enhancement effects, and the effects of dislocation density in
UV LEDs were also examined.
• EL behavior under low and high injection current is
investigated from low temperature (LT) to room temperature
(RT).
• The EL IQE results were compared to photoluminescence (PL)
IQE results to investigate the difference between these methods.
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Experiments
300 × 300 um2
p- contact
ITO
0.2 µm
1 × 1019 cm-3
16 periods
2/16 nm
20 nm
Mg-doped p-GaN
AlGaN EBL
In0.15Ga0.85N/GaN MQW
2 µm
5 × 1018 cm-3
30 nm
Si-doped n-GaN
n- contact
AlN nucleation layer
patterns sapphire
1.4 um
1 um
3.5 um
2