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Characteristics comparison between GaN epilayers
grown on patterned and unpatterned sapphire
substrate (0 0 0 1)
Jae-Chul Song, Seon-Ho Lee, In-Hwan Lee, Kyeong-Won Seol,
Santhakumar Kannappan, Cheul-Ro Lee
Journal of Crystal Growth 308 321–324,2007
D.J. Sun
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Outline
• Introduction
• Experiment
• Results and discussion
• Conclusion
• References
2
Introduction
• Recently,
achieved
substrates
able to
reduction in dislocation density was
by using lateral epitaxial patterned
(LEPS). Using this technique, we were
obtain high crystalline quality.
3
Experiment
p-GaN
EBL Al0.05Ga0.95N
MQW five-period
n-GaN
GaN buffer layer
Sapphire (2-inch)
chip size：350×350µm²
4
Results and discussion
5
Results and discussion
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