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EXPERIMENTAL DETAILS
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 utilizes a modified version of the APSYS simulation software.
 For Mg acceptors in AlGaN, the ionization energy is scaled linearly
from 170 meV (GaN) to 470 meV (AlN).
 The ionization energy of Si donors in GaN is 20 meV.
 The coefficients for Shockley-Reed-Hall (SRH) recombination (A =
5 × 106 /𝑆)
 Auger recombination (C= 2.4 × −30/𝑆) are adjusted
 Fit parameters are the photon extraction efficiency of 80% and the pcontact resistivity of 5 × 10−3 Ω𝑐𝑚2
p-GaN doped 12 × 1018 𝑐𝑚−3 Mg)
45-nm p-Al0.15Ga0.85N(EBL)
15-nm GaN barrier
2-nm-thick In0.12Ga0.88N Well
3 lm-thick 5 × 1018 𝑐𝑚−3 n − GaN
傳統結構
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