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doping concentrations：
1.5 × 1019 cm−3 for 10 [Ω/ □]
5 × 1018 cm−3 for 32 [Ω/ □]
3 × 1018 cm−3 for 45 [Ω/ □]
Fig.4 Calculated current distribution of LEDs according
to the sheet resistance Rsh,n−GaN of the n-type GaN
layer. (a) 45 [Ω/ □]. (b) 32 [Ω/ □]. (c) 10 [Ω/ □].
TME film thicknesses：
5 nm for 36 [Ω/ □]
10 nm for 18 [Ω/ □]
20 nm for 9 [Ω/ □]
Fig.5 Calculated light emission patterns according
to the sheet resistance of the TME layer Rsh,TME.
(a) 9 [Ω/□]. (b) 18 [Ω/ □]. (c) 36 [Ω/ □].
p-type doping concentrations：
1 ×1018cm-3 for 0.5 × 10-2 cm2 Ω
ρc,p−GaN 增加可以減少熱的產生
Fig.6 Calculated light emission patterns according to the
contact resistance ρc,p−GaN of the p-type GaN layer.
ρc,p−GaN are (a) 0.1 × 10−2 Ω cm2, (b) 0.5 × 10−2 Ω cm2,
and (c) 1.0 × 10−2 Ω cm2, respectively.
Simulation
Fig.7 Light intensity distributions calculated at
the top surfaces of LEDs for different electrode
patterns. (a) Bar-shaped pattern. (b) U-shaped Fig.8 Measured light intensity distributions on
pattern.
the top surfaces of LEDs for different
electrode patterns by optical microscopes. (c)
and (d) show the signal processed data of (a)
and (b), respectively, to see the light intensity
distribution more clearly.