Transcript 下載/瀏覽

Results and discussion
8
Results and discussion
9
Conclusion
• we were able to minimize the TD and
improve the optical quality by using PSS
for growth of GaN epilayers.
10
References
•
Chia-Ta Chang, Shih-Kuang Hsiao, Edward Yi Chang, Senior
Member, IEEE, Yu-Lin Hsiao, Jui-Chien Huang,Chung-Yu Lu,
Huang-Choung Chang, Kai-Wen Cheng, and Ching-Ting
Lee“460-nm InGaN-Based LEDs Grown on Fully Inclined
Hemisphere-Shape-Patterned Sapphire Substrate With
Submicrometer Spacing,” IEEE PHOTONICS
TECHNOLOGY LETTERS, VOL. 21, NO. 19, OCTOBER 1,
2009.
11
• Thanks for your attention !
12