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Nitride based Power Chip with IndiumTin-Oxide p-Contact and Al Back-Side Reflector Chia- Sheng CHANG, Shoou-Jinn CHANG, Yan-Kuin SU, Wei-Shou CHEN, Chien-Fu SHEN, Shih-Chang SHEI1 and Hsin-Ming LO1 璩青陽 Outline Introduction Experiments Results and discussion Conclusion References Introduction Recently, tremendous progress has been achieved in GaNbased blue and green light emitting diodes (LEDs). However, for high power applications such as projector, mobile lighting and flash lamp, we still need to further increase the output intensity of the chips. Experiments