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Nitride based Power Chip with IndiumTin-Oxide p-Contact and Al Back-Side
Reflector
Chia- Sheng CHANG, Shoou-Jinn
CHANG, Yan-Kuin SU, Wei-Shou
CHEN, Chien-Fu SHEN,
Shih-Chang SHEI1 and Hsin-Ming
LO1
璩青陽
Outline
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Introduction
Experiments
Results and discussion
Conclusion
References
Introduction
Recently, tremendous progress has been achieved in GaNbased
blue and green light emitting diodes (LEDs).
However, for high power applications such as projector,
mobile lighting and flash lamp, we still need to further
increase the output intensity of the chips.
Experiments