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Results and Discussion
InGaN/InGaN
FIG. 3. Color online (a) Energy band diagram of proposed InGaN
LED structure with In0.1Ga0.9N barriers at 150 mA. (b) Enlarged
drawing of the conduction band near EBL. (c) Enlarged drawing near
last QW.
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Results and Discussion
FIG. 4. Color online Carrier concentrations of InGaN/InGaN
structure near active region at 150 mA.
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Results and Discussion
FIG. 5. Color online (a) IQE and (b) light output power as a
function of current for the two LED structures
under study.
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Conclusion
‫ ﻪ‬GaN barriers are replaced by the InGaN barriers in
blue InGaN LEDcarriers injection is enhanced, the
electron current leakage is markedly reduced。
‫ ﻪ‬Droop effect becomes less severe due to the
relatively small polarization effect between the
barriers and wells。
‫ ﻪ‬The lower barrier height in the active region for
holes。
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References
‫ ﻪ‬Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan
Tsai, and Sheng-Horng Yen, Appl. Phys. Lett.
95, 011116 (2009)
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