Transcript Chapter 6

Digital Integrated
Circuits
A Design Perspective
Designing Combinational
Logic Circuits
November 2002.
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1
Combinational Circuits
Combinational vs. Sequential Logic
In
In
Out
Out
Combinational
Output = f(In)
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Sequential
Output = f(In, Previous In)
2
Combinational Circuits
Static CMOS Circuit
1. At every point in time (except during the switching
transients) each gate output is connected to either
VDD or Vss via a low-resistive path.
2. The outputs of the gates assume at all times the value
of the Boolean function, implemented by the circuit
(ignoring, once again, the transient effects during
switching periods).
3. This is in contrast to the dynamic circuit class, which
relies on temporary storage of signal values on the
capacitance of high impedance circuit nodes.
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Combinational Circuits
Static Complementary CMOS
VDD
In1
In2
PUN
InN
In1
In2
InN
PMOS only
F(In1,In2,…InN)
PDN
NMOS only
PUN and PDN are dual logic networks
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Combinational Circuits
NMOS Transistors
in Series/Parallel Connection
Transistors can be thought as a switch controlled by its gate signal
NMOS switch closes when switch control input is high
A
B
X
Y
Y = X if A and B
A
X
B
Y
Y = X if A OR B
NMOS Transistors pass a “strong” 0 but a “weak” 1
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Combinational Circuits
PMOS Transistors
in Series/Parallel Connection
PMOS switch closes when switch control input is low
B
A
X
Y
Y = X if A AND B = A + B
A
X
B
Y
Y = X if A OR B = AB
PMOS Transistors pass a “strong” 1 but a “weak” 0
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Combinational Circuits
Threshold Drops
VDD
PUN
VDD
S
D
VDD
D
0  VDD
VGS
S
CL
VDD  0
PDN
D
VDD
S
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CL
0  VDD - VTn
CL
VGS
VDD  |VTp|
S
CL
D
7
Combinational Circuits
Complementary CMOS Logic Style
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8
Combinational Circuits
Example Gate: NAND
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9
Combinational Circuits
Example Gate: NOR
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10
Combinational Circuits
Complex CMOS Gate
B
A
C
D
OUT = D + A • (B + C)
A
D
B
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C
11
Combinational Circuits
Cell Design
 Standard
Cells
 General purpose logic
 Can be synthesized
 Same height, varying width
 Datapath
Cells
 For regular, structured designs (arithmetic)
 Includes some wiring in the cell
 Fixed height and width
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Combinational Circuits
Standard Cells
N Well
VDD
Cell height 12 metal tracks
Metal track is approx. 3 + 3
Pitch =
repetitive distance between objects
Cell height is “12 pitch”
In
2
Cell boundary
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Out
GND
Rails ~10
13
Combinational Circuits
Standard Cells
VDD
2-input NAND gate
VDD
B
A
B
Out
A
GND
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14
Combinational Circuits
Stick Diagrams
Contains no dimensions
Represents relative positions of transistors
VDD
VDD
Inverter
NAND2
Out
Out
In
GND
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GND
A B
15
Combinational Circuits
Stick Diagrams
Logic Graph
A
j
X
C
C
B
X = C • (A + B)
C
i
A
B
A
B
C
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i
X
VDD
j
B
Circuits2nd
PUN
GND
A
PDN
16
Combinational Circuits
Two Stick Layouts of !(C • (A + B))
A
C
B
A
B
C
VDD
VDD
X
X
GND
GND
uninterrupted diffusion strip
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Combinational Circuits
Consistent Euler Path

An uninterrupted diffusion strip is possible only if there
exists a Euler path in the logic graph

Euler path: a path through all nodes in the graph such that
each edge is visited once and only once.
X
C
i
X
B
VDD
j
GND

A
A B C
For a single poly strip for every input signal, the Euler
paths in the PUN and PDN must be consistent (the same)
18
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Combinational Circuits
Example:1. Draw Logic Graph


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Identify each transistor
by a unique name of its
gate signal (A, B, C, D,
E in the example of
Figure 1).
Identify each
connection to the
transistor by a unique
name (1,2,3,4 in the
example of Figure 1).
19
Combinational Circuits
Example:2. Define Euler Path





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Euler paths are defined by a path
the traverses each node in the
path, such that each edge is
visited only once.
The path is defined by the order
of each transistor name. If the
path traverses transistor A then B
then C. Then the path name is
{A, B, C}
The Euler path of the Pull up
network must be the same as the
path of the Pull down network.
Euler paths are not necessarily
unique.
It may be necessary to redefine
the function to find a Euler path.
F = E + (CD) + (AB) = (AB) +E +
(CD)
20
Combinational Circuits
Example:3.Connection label layout
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Combinational Circuits
Example:4.VDD, VSS and Output Labels
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Combinational Circuits
Example:5.Interconnected
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Combinational Circuits
OAI22 Logic Graph
A
C
B
D
X
D
X = (A+B)•(C+D)
C
D
A
B
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C
VDD
X
B
A
B
C
D
PUN
A
GND
PDN
24
Combinational Circuits
Example: x = ab+cd
x
x
c
b
VDD
x
a
c
b
VD D
x
a
d
GND
d
GND
(a) Logic graphs for (ab+cd)
(b) Euler Paths {a b c d}
VD D
x
GND
a
b
c
d
(c) stick diagram for ordering {a b c d}
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Combinational Circuits
CMOS Properties
Full rail-to-rail swing; high noise margins
 Logic levels not dependent upon the relative
device sizes; ratioless
 Always a path to Vdd or Gnd in steady state;
low output impedance
 Extremely high input resistance; nearly zero
steady-state input current
 No direct path steady state between power
and ground; no static power dissipation
 Propagation delay function of load
capacitance and resistance of transistors

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Combinational Circuits
Switch Delay Model
Req
A
A
Rp
A
Rp
Rp
B
Rn
Rp
CL
Rn
A
Cint
INV
NAND2
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Cint
A
A
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Rp
A
B
Rn
B
CL
Rn
Rn
A
B
CL
NOR2
27
Combinational Circuits
Input Pattern Effects on Delay
Delay is dependent on
the pattern of inputs
 Low to high transition

Rp
A
Rp
B
Rn
 both inputs go low
– delay is 0.69 Rp/2 CL
CL
 one input goes low
B
Rn
– delay is 0.69 Rp CL
Cint
A

High to low transition
 both inputs go high
– delay is 0.69 2Rn CL
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Combinational Circuits
Delay Dependence on Input Patterns
3
Input Data
Pattern
Delay
(psec)
A=B=01
67
A=1, B=01
64
A= 01, B=1
61
0.5
A=B=10
45
0
A=1, B=10
80
A= 10, B=1
81
A=B=10
2.5
Voltage [V]
2
A=1 0, B=1
1.5
A=1, B=10
1
-0.5
0
100
200
time [ps]
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300
400
NMOS = 0.5m/0.25 m
PMOS = 0.75m/0.25 m
CL = 100 fF
29
Combinational Circuits
Transistor Sizing
Rp
2 A
Rp
B
Rn
2
B
2
Rn
A
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Rp
4 B
2
CL
Cint
Rp
4
Cint
A
1
Rn
Rn
A
B
CL
1
30
Combinational Circuits
Transistor Sizing a Complex
CMOS Gate
A
B
8 6
C
8 6
4 3
D
4 6
OUT = D + A • (B + C)
A
D
1
B
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2
2C
2
31
Combinational Circuits
Fan-In Considerations
A
B
C
D
A
CL
B
C3
C
C2
D
C1
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Distributed RC model
(Elmore delay)
tpHL = 0.69 Reqn(C1+2C2+3C3+4CL)
Propagation delay deteriorates
rapidly as a function of fan-in –
quadratically in the worst case.
32
Combinational Circuits
tp as a Function of Fan-In
1250
quadratic
tp (psec)
1000
Gates with a
fan-in
greater than
4 should be
avoided.
750
tpH
500
tp
L
250
tpL
linear
H
0
2
4
6
8
10
12
14
16
fan-in
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Combinational Circuits
tp as a Function of Fan-Out
tpNOR2
tpNAND2
tpINV
tp (psec)
2
All gates
have the
same drive
current.
Slope is a
function of
“driving
strength”
4
6
8
10
12
14
16
eff. fan-out
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Combinational Circuits
tp as a Function of Fan-In and Fan-Out
 Fan-in:
quadratic due to increasing
resistance and capacitance
 Fan-out: each additional fan-out gate
adds two gate capacitances to CL
tp = a1FI + a2FI2 + a3FO
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Combinational Circuits
Fast Complex Gates:
Design Technique 1
 Transistor
sizing
 as long as fan-out capacitance dominates
 Progressive
InN
sizing
CL
MN
In3
M3
C3
In2
M2
C2
In1
M1
C1
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Distributed RC line
M1 > M2 > M3 > … > MN
(the fet closest to the
output is the smallest)
Can reduce delay by more than
20%; decreasing gains as
technology shrinks
36
Combinational Circuits
Fast Complex Gates:
Design Technique 2
 Transistor
ordering
critical path
charged
CL
In3 1 M3
In2 1 M2
C2 charged
In1
M1
01
C1 charged
delay determined by time to
discharge CL, C1 and C2
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critical path
01
In1
M3
CLcharged
In2 1 M2
C2 discharged
In3 1 M1
C1 discharged
delay determined by time to
discharge CL
37
Combinational Circuits
Fast Complex Gates:
Design Technique 3
 Alternative
logic structures
F = ABCDEFGH
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Combinational Circuits
Fast Complex Gates:
Design Technique 4
 Isolating
fan-in from fan-out using buffer
insertion
CL
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CL
39
Combinational Circuits
Fast Complex Gates:
Design Technique 5

Reducing the voltage swing
tpHL = 0.69 (3/4 (CL VDD)/ IDSATn )
= 0.69 (3/4 (CL Vswing)/ IDSATn )
 linear reduction in delay
 also reduces power consumption
But the following gate is much slower!
 Or requires use of “sense amplifiers” on the
receiving end to restore the signal level
(memory design)

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Combinational Circuits
Ratioed Logic
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Combinational Circuits
Ratioed Logic
VDD
Resistive
Load
VDD
Depletion
Load
RL
PDN
VSS
(a) resistive load
PMOS
Load
VSS
VT < 0
F
In1
In2
In3
VDD
F
In1
In2
In3
PDN
VSS
(b) depletion load NMOS
F
In1
In2
In3
PDN
VSS
(c) pseudo-NMOS
Goal: to reduce the number of devices over complementary CMOS
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Combinational Circuits
Ratioed Logic
VDD
• N transistors + Load
Resistive
Load
• VOH = V DD
RL
• VOL =
F
In1
In2
In3
RPN + RL
• Assymetrical response
PDN
• Static power consumption
VSS
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• tpL= 0.69 RLCL
43
Combinational Circuits
Active Loads
VDD
Depletion
Load
VDD
PMOS
Load
VT < 0
VSS
F
In1
In2
In3
PDN
VSS
depletion load NMOS
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F
In1
In2
In3
PDN
VSS
pseudo-NMOS
44
Combinational Circuits
Pseudo-NMOS
VDD
A
B
C
D
F
CL
VOH = VDD (similar to complementary CMOS)
V2 
k

2
OL
p V
k  V
– V V
– -------------  = -----– V


n
DD
Tn OL
DD
Tp
2 
2

V OL =  VDD – V T  1 –
kp
1 – ------ (assuming that V T = V Tn = VTp )
kn
SMALLER AREA & LOAD BUT STATIC POWER DISSIPATION!!!
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Combinational Circuits
Pseudo-NMOS VTC
3.0
2.5
W/Lp = 4
Vout [V]
2.0
1.5
W/Lp = 2
1.0
0.5
W/Lp = 0.5
W/Lp = 1
W/Lp = 0.25
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Vin [V]
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Combinational Circuits
Improved Loads
VDD
M1
Enable
M2
M1 >> M2
F
A
B
C
D
CL
Adaptive Load
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Combinational Circuits
Improved Loads (2)
VDD
M1
VDD
M2
Out
A
A
B
B
Out
PDN1
PDN2
VSS
VSS
Differential Cascode Voltage Switch Logic (DCVSL)
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Combinational Circuits
DCVSL Example
Out
Out
B
B
A
B
B
A
XOR-NXOR gate
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Combinational Circuits
DCVSL Transient Response
V olta ge [V]
2.5
AB
1.5
0.5
-0.5 0
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AB
A,B
0.2
A,B
0.4
0.6
Time [ns]
0.8
1.0
50
Combinational Circuits
Pass-Transistor
Logic
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Combinational Circuits
Pass-Transistor Logic
Inputs
B
Switch
Out
A
Out
Network
B
B
• N transistors
• No static consumption
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Combinational Circuits
NMOS-Only Logic
3.0
In
1.5m/0.25m
VDD
x
Out
0.5m/0.25m
0.5m/0.25m
Voltage [V]
In
Out
2.0
x
1.0
0.0
0
0.5
1
1.5
2
Time [ns]
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Combinational Circuits
NMOS-only Switch
C = 2.5V
C = 2.5 V
M2
A = 2.5 V
A = 2.5 V
B
B
Mn
CL
M1
VB does not pull up to 2.5V, but 2.5V - VTN
Threshold voltage loss causes
static power consumption
NMOS has higher threshold than PMOS (body effect)
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Combinational Circuits
NMOS Only Logic
Solution 1: Level Restoring Transistor
VDD
VDD
Level Restorer
Mr
B
A
Mn
M2
X
Out
M1
• Advantage: Full Swing
• Restorer adds capacitance, takes away pull down current at X
• Ratio problem
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Combinational Circuits
Solution 2: Single Transistor Pass Gate with
VT=0
VDD
VDD
0V
2.5V
VDD
0V
Out
2.5V
WATCH OUT FOR LEAKAGE CURRENTS
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Combinational Circuits
Complementary Pass Transistor Logic
A
A
B
B
Pass-Transistor
Network
F
(a)
A
A
B
B
B
Inverse
Pass-Transistor
Network
B
B
A
F
B
B
A
A
B
F=AB
A
B
F=A+B
F=AB
AND/NAND
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A
F=AÝ
(b)
A
A
B
B
F=A+B
B
OR/NOR
A
F=AÝ
EXOR/NEXOR
57
Combinational Circuits
Solution 3: Transmission Gate
C
A
C
A
B
B
C
C
C = 2.5 V
A = 2.5 V
B
CL
C=0V
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Combinational Circuits
Resistance of Transmission Gate
30
2.5 V
Resistance, ohms
Rn
20
Rn
Rp
2.5 V
Vou t
Rp
0V
10
Rn || Rp
0
0.0
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Vou t , V
2.0
59
Combinational Circuits
Pass-Transistor Based Multiplexer
S
S
S
S
VDD
S
A
VDD
M2
F
S
M1
B
S
GND
In1
EE141 Integrated
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In2
60
Combinational Circuits
Transmission Gate XOR
B
B
M2
A
A
F
M1
M3/M4
B
B
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61
Combinational Circuits
Transmission Gate Full Adder
P
VDD
Ci
A
P
A
A
P
B
VDD
Ci
A
P
Ci
VDD
S Sum Generation
Ci
P
B
VDD
A
P
Co Carry Generation
Ci
A
Setup
P
Similar delays for sum and carry
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Combinational Circuits
Dynamic Logic
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63
Combinational Circuits
Dynamic CMOS

In static circuits at every point in time (except
when switching) the output is connected to
either GND or VDD via a low resistance path.
 fan-in of n requires 2n (n N-type + n P-type)
devices

Dynamic circuits rely on the temporary
storage of signal values on the capacitance of
high impedance nodes.
 requires on n + 2 (n+1 N-type + 1 P-type)
transistors
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Combinational Circuits
Dynamic Gate
Clk
Clk
Mp
off
Mp on
Out
In1
In2
In3
Clk
CL
PDN
1
Out
((AB)+C)
A
C
B
Me
Clk
off
Me on
Two phase operation
Precharge (Clk = 0)
Evaluate (Clk = 1)
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Combinational Circuits
Conditions on Output
Once the output of a dynamic gate is
discharged, it cannot be charged again until
the next precharge operation.
 Inputs to the gate can make at most one
transition during evaluation.
 Output can be in the high impedance state
during and after evaluation (PDN off), state is
stored on CL

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Combinational Circuits
Properties of Dynamic Gates

Logic function is implemented by the PDN only
 number of transistors is N + 2 (versus 2N for static complementary
CMOS)


Full swing outputs (VOL = GND and VOH = VDD)
Faster switching speeds
 reduced load capacitance due to lower input capacitance (Cin)
 reduced load capacitance due to smaller output loading (Cout)
 no Isc, so all the current provided by PDN goes into discharging CL



Overall power dissipation usually higher than static CMOS
Low noise margin (NML)
Needs a precharge/evaluate clock
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Combinational Circuits
Issues in Dynamic Design 1:
Charge Leakage
CLK
Clk
Mp
Out
CL
A
Clk
Evaluate
VOut
Me
Precharge
Leakage sources
Dominant component is subthreshold current
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Combinational Circuits
Solution to Charge Leakage
Keeper
Clk
Mp
A
Mkp
CL
Out
B
Clk
Me
Same approach as level restorer for pass-transistor logic
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Combinational Circuits
Issues in Dynamic Design 2:
Clk
Mp
Out
A
CL
B=0
Clk
Charge Sharing
Charge stored originally on
CL is redistributed (shared)
over CL and CA leading to
reduced robustness
CA
Me
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71
Combinational Circuits
Charge Sharing Example
Clk
A
A
B
B
B
Cc=15fF
C
C
Ca=15fF
Out
CL=50fF
!B
Cb=15fF
Cd=10fF
Clk
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Combinational Circuits
Charge Sharing
VDD
case 1) if V out < VTn
VDD
Clk

Mp
Mp
Out
Out
CL
A
A
==
BB
00
Clk 
CL
Ma
Ma
M
Mb
b
Mee
M
EE141 Integrated
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XX
a
CC
a
CC
bb
Circuits2nd
C L VDD = C L Vout  t  + Ca  VDD – V Tn  V X  
or
Ca
V out = Vout  t  – V DD = – --------  V DD – V Tn  V X  
C
L
case 2) if V out > VTn
C
 --------------------a -
Vout = –V DD 

C
+
C
 a
L
73
Combinational Circuits
Solution to Charge Redistribution
Clk
Mp
Mkp
Clk
Out
A
B
Clk
Me
Precharge internal nodes using a clock-driven transistor
(at the cost of increased area and power)
EE141 Integrated
© Digital
Circuits2nd
74
Combinational Circuits
Issues in Dynamic Design 3:
Clk
Mp
A=0
Backgate Coupling
Out1 =1
CL1
Out2 =0
CL2
In
B=0
Clk
Me
Dynamic NAND
EE141 Integrated
© Digital
Circuits2nd
Static NAND
75
Combinational Circuits
Backgate Coupling Effect
3
2
Out1
1
Clk
0
In
Out2
2
Time, ns
-1
0
EE141 Integrated
© Digital
Circuits2nd
4
6
76
Combinational Circuits
Issues in Dynamic Design 4:
Clk
Mp
A
Out
CL
B
Clk
Me
EE141 Integrated
© Digital
Circuits2nd
Clock Feedthrough
Coupling between Out and
Clk input of the precharge
device due to the gate to
drain capacitance. So
voltage of Out can rise
above VDD. The fast rising
(and falling edges) of the
clock couple to Out.
77
Combinational Circuits
Clock Feedthrough
Clock feedthrough
Clk
Out
2.5
In1
1.5
In2
In3
In &
Clk
0.5
In4
Out
Clk
-0.5
0
0.5
Time, ns
1
Clock feedthrough
EE141 Integrated
© Digital
Circuits2nd
78
Combinational Circuits
Other Effects
 Capacitive
coupling
 Substrate coupling
 Minority charge injection
 Supply noise (ground bounce)
EE141 Integrated
© Digital
Circuits2nd
79
Combinational Circuits
Cascading Dynamic Gates
V
Clk
Clk
Mp
Mp
Out1
Clk
Me
Out2
In
In
Clk
Clk
Me
Out1
VTn
V
Out2
t
Only 0  1 transitions allowed at inputs!
EE141 Integrated
© Digital
Circuits2nd
80
Combinational Circuits
Domino Logic
Clk
In1
In2
In3
Clk
EE141 Integrated
© Digital
Mp
11
10
PDN
Me
Circuits2nd
Out1
Clk
Mp Mkp
Out2
00
01
In4
In5
Clk
PDN
Me
81
Combinational Circuits
Why Domino?
Clk
Ini
Inj
Clk
PDN
Ini
Inj
PDN
Ini
Inj
PDN
Ini
Inj
PDN
Like falling dominos!
EE141 Integrated
© Digital
Circuits2nd
82
Combinational Circuits
Properties of Domino Logic
Only non-inverting logic can be implemented
 Very high speed

 static inverter can be skewed, only L-H transition
 Input capacitance reduced – smaller logical effort
EE141 Integrated
© Digital
Circuits2nd
83
Combinational Circuits
Designing with Domino Logic
VDD
VDD
VDD
Clk
Mp
Clk
Mp
Out1
Mr
Out2
In1
In2
In3
PDN
PDN
In4
Can be eliminated!
Clk
Me
Clk
Me
Inputs = 0
during precharge
EE141 Integrated
© Digital
Circuits2nd
84
Combinational Circuits
np-CMOS
Clk
In1
In2
In3
Mp
11
10
PDN
Clk
Me
Out1
Clk
Me
In4
In5
PUN
00
01
Clk
Mp
Out2
(to PDN)
Only 0  1 transitions allowed at inputs of PDN
Only 1  0 transitions allowed at inputs of PUN
EE141 Integrated
© Digital
Circuits2nd
85
Combinational Circuits