Transcript Fairchild PowerPoint Presentation Template

The Power to Amaze.
FAIRCHILD DISCRETE SOLUTIONS
FOR LIGHTING
LIGHTING SEGMENT, POWER CONVERSION
SEP. 2014
In taking receipt of this Material, recipient acknowledges
and agrees to maintain its confidentiality and use the
Material for the sole purpose of business endeavors with
Fairchild Semiconductor. Sharing with 3rd parties is
prohibited.
2
Discrete Solutions


HV MOSFET Technology
500, 600, 650 & 800 V MOSFETs




100, 150 V MOSFETs






Planar MOSFETs – UniFET™ MOSFET
Super-Junction MOSFETs
- SuperFET®, SupreMOS® & SuperFET® II MOSFET
Fast recovery MOSFETs
– FRFET® I & FRFET® II MOSFET and UltraFRFET™ I & UltraFRFET™ II MOSFET
Line-up of small & SMD packages
Trench MOSFET – PowerTrench® MOSFET in TO-220/F & D2-PAK
650-1,000 V MOSFETs ; line-up
200-400 V MOSFETs ; line-up
Fast Recovery Diodes ; 200,300 & 600 V
BoostPAK for DC-DC converter
3
High Voltage MOSFET Technologies
HV Fairchild has been providing both planar MOSFETs and super-junction MOSFETs.
600 V MOSFET A*RDS(on)
AFET
BFET
UniFETTM
MOSFET
UniFET™ II
MOSFET
CFET
85mohm
SuperFET ® II
MOSFET
MOSFET
2012
®
2008
2007
2006
2005
2004
2003
2002
SupreMOS
2001
2000
1999
1998
1997
1996
1995
● Planar
■ Super-Junction
2011
SuperFET® I MOSFET
2010
QFET® MOSFET
2009
A*Rds(on) [mW.cm2]
•
Introduction Year
4
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET ; comparison of FCS’5N50 series
•
Comparison of FCS’ 5N50 series from datasheet
FQPF5N50C
FDPF5N50
FDPF5N50NZ
Technology
CFET
UNIFETTM MOSET
UNIFETTM II MOSFET
BVdss
500 V
500 V
500 V
Id
5.0 A
5.0 A
4.5 A
Rdson (max)
1.4 ohm
1.4 ohm
1.5 ohm
Vgs(th)
2~4V
3~5V
3~5V
Qg (typ)
12 nC
11 nC
9 nC
trr (typ)
263 ns
300 ns
210 ns
Diode dv/dt immunity
4.5 V/ns
4.5 V/ns
10 V/ns
Internal ESD diode
None
None
Exist
•The strong point of UniFETTM II MOSFET
• Lower Qg  reduce switching loss
• Smaller trr & Irr  higher diode dv/dt immunity
 Improve system reliability in bridge circuit
• Internal ESD diode b/w gate and source  improvement against surge voltage
5
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET benchmarking; better gate charge
Qg [nC]
Qgs [nC]
FDPF7N60NZ (UniFETTM II MOSFET)
14.6
2.8
5.6
FQPF8N60C (C-FET)
28.7
4.7
24.0
Company -S (1.2ohm)
17.7
5.4
4.2
FDPF7N60NZ
FQPF8N60C
Company - S
1us/div
Qgd [nC]
•
The Qg of FDPF7N60NZ is lower than company S’
product.
•
Switching loss makes up the largest portion in total
power loss especially at light and medium power.
•
In resonant applications, the body diode turns on prior
to MOSFET channel. In this soft switching transition,
there is no “miller effect”.
•
Therefore, the Qg in above equation simply becomes
Qg-Qgd.
6
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET benchmarking; better body diode
Spec
Trr[ns] at 25℃
DUTs
Irr[A] at 25℃
Trr[ns] at 125℃
Irr[A] at 125℃
Test condition: Is=5 A, di/dt=100 A/us
FDPF5N60NZ (2.0 ohm)
Company - S (3.6 ohm)
Company -S (2.0 ohm)
Company – S (1.6 ohm)
396.4
645.4
672.7
700.0
25℃
FDPF5N60NZ (2.0 ohm)
2.2
2.9
3.3
3.7
•
•
500.0
801.1
842.7
851.1
2.9
3.1
3.5
4.0
FDPF7N60NZ has better reverse recovery
characteristics than company S’ product.
Small reverse recovery current improves
diode dv/dt immunity.
Company – S (3.6 ohm)
Company - S (2.0 ohm)
Company - S (1.6 ohm)
7
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET benchmarking; better switching
Eoff=3.78 uJ
Eoff=3.17 uJ
Id : 2 A/div
FQPF8N60C
Vds : 100 V/div
FDPF7N60NZ
20 ns/div
[ Under Id=1 A, Vgs =15 V, Rg=10 ohm ]
•
The current of UniFETTM II MOSFET falls faster than CFET during turn off operation
Because of the lower Qg of UniFETTM II MOSFET
 UniFETTM II MOSFET has Lower Eoff
8
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET; advantages in LLC application
• Reverse Recovery Waveforms
• UniFETTM II MOSFET – Optimized body diode,
considering LLC application
. Smaller reverse recovery charge
. Stronger body diode ruggedness
• Body Diode Ruggedness
• Table. Critical Specification Comparison of DUTs
DUTs
UniFETTM
II MOSFET
Competitor A
Competitor B
Rds(on)Max
BVDss
0.85 500 V
0.85 500 V
0.85 500 V
ID
Qg
Trr
Qrr
dv/dt
8A
7.2 A
8A
18 nC
32 nC
16 nC
160 ns
238 ns
1200 ns
1.2 μC
2.5 μC
10 μC
10 V/ns
4.5 V/ns
9
500 & 600 V Planar MOSFETs
UniFETTM II MOSFET; line-up
Product name
FDPF3N50NZ
FDD3N50NZ
FDP/PF5N50NZ
FDD5N50NZ
FDP/PF8N50NZ
FDD8N50NZ
FDP12N50NZ
FDPF12N50NZ
FDP22N50N
FDPF4N60NZ
FDD4N60NZ
FDP5N60NZ
FDPF5N60NZ
FDD5N60NZ
FDP7N60NZ
FDPF7N60NZ
FDD/U7N60NZ
FDP10N60NZ
FDPF10N60NZ
FDP12N60NZ
FDPF12N60NZ
FDPF17N60NT
* suffix : N – UniFET II MOSFET,
Package
BVDSS (V)
TO220F
DPAK
TO220/F
DPAK
TO220/F
500
DPAK
TO220
TO220F
TO220
TO220F
DPAK
TO220
TO220F
DPAK
TO220
TO220F
600
D/IPAK
TO220
TO220F
TO220
TO220F
TO220F
Z – Internal ESD Diode
ID (A)
RDS(on) max
(Ohm)
Qg (nC)
Samples
Release
Old PN being Replaced
3.0
2.5
4.5
4.0
8.0
6.5
11.5
11.5
22.0
4.0
3.5
4.5
4.5
4.0
6.5
6.5
5.5
10.0
10.0
12.0
12.0
17.0
2.50
2.50
1.50
1.50
0.85
0.85
0.52
0.52
0.21
2.50
2.50
2.00
2.00
2.00
1.25
1.25
1.25
0.75
0.75
0.65
0.65
0.34
8
8
9
9
14
14
25
25
49
10
10
11
11
11
13
13
13
27
27
30
30
48
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
FQPF3N50C
FQD3N50CTM
FQP/PF5N50C
FQD5N50CTM
FQP/PF9N50C
FDD6N50
FQP13N50C
FQPF13N50C
FQPF5N60C
FQD5N60C
FQP6N60C
FQPF6N60C
FQD6N60C
FQP8N60C
FQPF8N60C
FCD4/5N60
FQP10N60C
FQPF10N60C
FQP12N60C
FQPF12N60C
10
SuperFET® II MOSFET
• Technology Feature
• 600 V/ 650 V Super-Junction technology
• Lower Output Capacitance (Eoss) for higher efficiency in light load conditions
• Higher body diode ruggedness and smaller reverse recovery charge (Qrr) for delivering
better reliable system in resonant converter
•
GATE
SOURCE
SupreFET ®
II Family
• SuperFET ® II Series : Excellent Switching Performance
P-PILLAR
• Faster switching speed can be achieve Maximize system efficiency
• Lower dv/dt and di/dt than SupreMOS® MOSFETs
• SuperFET ® II - Easy Driving Series : Optimizing Switching Performance
• Built-in gate resistance and optimized Cgd
• Easy to design due to controlled dv/dt and di/dt at high current
• Reliable operation at abnormal conditions; start-up, load transient and paralleled operation
• Fast Recovery SuperFET ® II Series
DRAIN
• Low Qrr and Trr of body diode
• Higher Vth for lower switching losses in resonant topologies
• Robust body diode
• Reliable operation in resonant topologies
11
SuperFET® II MOSFET
Product Features
Design Benefits
• Faster switching speed and Low FOM
• Lower dv/dt than SupreMOS® MOSFET
• Maximize system efficiency for high-end applications
• Direct replace of SupreMOS® MOSFETs
• Enable PQFN88 package
• Enable Low profile design
•650V for low RDS(on) range
• Better Reliability for out door applications
• Both Solar and SMPS higher voltage requirement
• Reduced Qg and Eoss
• Higher light load efficiency compared to SuperFET®
MOSFET
• Lower driving requirement
• Wide Range of RDS(on)
• Cover from several kilo watt high-end power to ten’s
watt adaptors
12
SuperFET® II MOSFET
Easy Drive Series
Product Features
• Controlled di/dt @ dv/dt at high current
• Optimize Gate Resistor(Integrated Rg)
Design Benefits
• Easy to design
• Reduced Gate oscillation
• Low EMI noise
• Reliable operation at abnormal conditions ;
start-up, load transient, paralleled operation, etc.
• Reduced reverse recovery charge(Qrr)
• Improved body diode ruggedness
- Higher dv/dt & di/dt capability
• Enable to use in some resonant bridge topologies
• Higher system reliability
• Reduced Qg and Eoss
• Higher light load efficiency compared to SuperFET® MOSFET
• Lower driving requirement
• Wide Range of RDS(on)
• Cover from several kilo watt high-end power to ten’s
watt adaptors
13
SuperFET® II MOSFET
Lighting applications
20
1
Fluorescent
CFL
BJT mostly
50
LFL
100
Low end – BJT
Middle end – 500V planar
High end – 600V planar
500
Power rating [W]
High power PFC
– SJ MOS
HID – indoor & outdoor
HID
250/500V planar at FB/HB
High power PFC – SJ MOS
LED
LED bulb/L-tube
Down/Flat light
600/650V planar
600-800V planar
800V SJ MOS at S/S Flyback
Outdoor/Street/Flood light
500/600V planar
High power PFC – SJ MOS
600V SJ MOS for better thermal performance
Lighting evolution
• Super-Junction MOSFET for lighting..
• PFC for high power ballast – sub 1 ohm of Rdson, TO-220 or isolated at PFC stage of high power ballast over 100 W
• PFC or HB inverter for med power ballast – D-pak is preferred for small form factor and BOM cost
• PFC for high power LED driver – same as high power ballast, outdoor & street lighting
• Single stage PFC Flyback for med power LED driver – 800 V MOS is required to withstand voltage spike at switching
• Switch for low power LED driver – 600 V in D/I-pak for thermal performance and power efficiency inside bulb and L-tube
14
SuperFET® II MOSFET
Release schedule; easy drive series
Technology
PRODUCT ID
RDS(ON)
ESR
[mΩ]
[ohm]
Release Plan
Package
CS
code S
SuperFET® II
FCH041N60E
TO247
41
1.2
Released
Easy Drive Series
FCP190N60E
TO220
190
5
Released
FCPF190N60E
TO220F
190
5
Released
FCP260N60E
TO220
260
5.8
Released
FCPF260N60E
TO220F
260
5.8
Released
FCP380N60E
TO220
380
6
Released
FCPF380N60E
TO220F
380
6
Released
FCD380N60E
DPAK
380
6
Released
15
SuperFET® II MOSFET
Release schedule; fast switching
Technology
PRODUCT ID
Package
RDS(ON)
[mΩ]
®
SuperFET II
Series
Release Plan
CS
code S
FCH043N60
FCH072N60
FCH104N60
FCP104N60
FCH125N60
FCH165N60
FCP190N60
FCPF190N60
FCMT125N60
TO247
TO247
TO247
TO220
TO247
TO247
TO220
TO220F
PQFN88
43
72
104
104
125
165
199
199
199
P3’14
P4’14
P4’14
P5’14
P4’14
P5’14
P4’14
P5’14
P4’14
P5’14
P4’14
P5’14
Released
Released
P6’14
P7’14
FCMT199N60
PQFN88
199
Released
FCMT299N60
PQFN88
299
FCP380N60
TO220
380
Released
FCPF380N60
FCPF400N60
TO220F
TO220F
380
400
Released
Released
P3’14
P4’14
16
SuperFET® II MOSFET
Release schedule; fast switching
Technology
PRODUCT ID
Package
RDS(ON)
[mΩ]
Release Plan
ES
CS
code S
SuperFET® II
FCD600N60Z
DPAK
600
Released, ESD diode included
Series
FCP600N60Z
FCPF600N60Z
TO220
TO220F
600
600
FCD620N60ZF
DPAK
620
FCU900N60Z
FCD900N60Z
IPAK Short lead
DPAK
900
900
Released, ESD diode included
Released, ESD diode included
Released, ESD diode included,
FR FET®
Released, ESD diode included
Released, ESD diode included
17
SuperFET® II MOSFET
Release schedule; Fast recovery body diode
Product Name
BVdss
Rdson (max)
Package
Trr
FCH041N60F
600 V
41 mohm
TO247
190 ns
Released
FCH072N60F
600 V
72 mohm
TO247
165 ns
Released
FCH104N60F
600 V
104 mohm
TO247
144 ns
Released
FCP104N60F
600 V
104 mohm
TO220
144 ns
Released
FCD620N60ZF
600 V
620 mohm
DPAK
84 ns
Released
FCP110N65F
650 V
110 mohm
TO220
TBD
P4 '14
P5 '14
FCB110N65F
650 V
110 mohm
D2PAK
TBD
P4 '14
P5 '14
FCP150N65F
650 V
150 mohm
TO220
TBD
P5 '14
P6 '14
FCP190N65F
650 V
190 mohm
TO-220
TBD
P2 '14
P3 '14
FCMT190N65F
650 V
190 mohm
PQFN88
TBD
P6 ’14
P7 ‘14
FCPF190N65FL1
650 V
190 mohm
TO220F
TBD
P4 '14
P5 '14
FCPF260N65FL1
650 V
260 mohm
TO220F
TBD
P5 '14
P6 '14
FCPF380N65FL1
650 V
380 mohm
TO220F
TBD
P5 '14
P6 '14
* Suffix Z : internal Zener diode
Eng. sample
Release
** Suffix L1: thin lead package (lead width)
18
SuperFET® II MOSFET
Bench test A
• Discrete benchmarking
Part #
FCP380N60E
BVDSS@ Tc=25℃
[v]
RDS(on) @ Tc=25℃
[mΩ]
Vgs(th)
ESR @ f=1MHz
Comp. I – new
Comp. I - old
656
660
672
671
363.0
372.5
384
324
[V]
3.2
3.7
3.3
3.1
[Ω]
5.51
2.79
7.74
1.51
47.9
54.1
43.6
65.7
6.53
8.75
5.04
6.75
11.35
14.74
13.45
15.75
Qg @ VDD=380V, ID=5A
Qgs @ VDD=380V, ID=5A
FCPF11N60
[nC]
Qgd @ VDD=380V, ID=5A
Qrr @ VDD=380V,
di/dt=300A/us, ID=5A
[uC]
2.934
3.623
3.275
3.688
trr @ VDD=380V,
di/dt=300A/us, ID=5A
[ns]
177.8
190.0
187.1
202.8
19
SuperFET® II MOSFET
Bench test A
• Gate charge characteristics
10
- Gate charge of FCPF380N60E is the second
lowest
8
- Condition: VDD=380 V, ID= 5 A, VGS=10 V
8
4
FCF11N60
IPP6R380E6
SPA11N60C3
Comp. I – old
FCPF380N60E
Comp. I – new
2
0
0.0
20.0n
40.0n
6
Eoss [uJ]
Vg [V]
6
60.0n
Qg [nC]
Device
Qg[nC]
Qgs[nC]
Qgd[nC]
FCPF380N60E
47.9
6.53
11.35
FCPF11N60
54.1
8.75
14.74
Comp. I - new
43.6
5.04
13.45
Comp. I - old
65.7
6.75
15.75
4
2
FCPF11N60
FCPF380N60E
IPPIPP6R380E6
Comp. I – new
Comp. I – old
SPA11N60C3
0
0
100
200
300
400
500
600
Vdd [V]
[ Stored energy in output capacitance @f=1 MHz ]
20
SuperFET® II MOSFET
Bench test A
• Reverse recovery of body diode
- Qrr and Trr of FCPF380N60E are the smallest
- Condition: ID= 10 A
10
Qrr
trr
ta
tb
[uC]
[ns]
[ns]
[ns]
FCPF380N60E
4.950
228.8
152.2
76.6
FCPF11N60
5.942
242.6
170.4
72.2
Comp. I - new
5.399
240.9
153.8
87.1
Comp. I - old
5.942
256.6
164.9
91.7
0
Device
I [A]
-10
-20
-30
FCF11N60
IPP6R380E6
Com
p. I – new
Com
p. I – old
SPA11N60C3
FCPF380N60E
-40
-50
0.0
100.0n
200.0n
300.0n
400.0n
t [ns]
Reverse recovery @ ID=10A
21
25
SuperFET® II MOSFET
94.50%
Eoff [uJ]
20
93.50%
Bench test A
15
• Test board: CRM PFC
10 for high power lighting application up to 120 W
• Test condition : Vin=100 Vac, 60 Hz, Vout=391 V, Pout=120 W, Ron=47 Ω, Roff=6.8 Ω
30
Eoff [uJ]
25
20
[ Turn-off switching
losses]
0
Output Power [W]
94.5%
91.50%
[ Efficiency comparison]90.50%
30W
60W
90W
120W
93.5%
FCPF380N60E
4.733
4.773
7.532
11.400
89.50%
FCPF11N60
4.761
4.699
5.073
IPP60R380E6
Comp. I – new
3.713
4.125
7.775
11.050
88.50%
Comp. I - old
SPA11N60C3
6.396
9.775
19.840
15
10
92.5%
7.432
Efficiency[%]
35
Efficiency[%]
5
92.50%
91.5%
30.280
89.5%
5
88.5%
0
87.5%
30W
60W
Output Power [W]
90W
120W
87.50%
90.5%
30W
60W
30W
FCPF380N60E
0.891749825
FCPF11N60
0.892171683
IPP60R380E6
Comp.
I – new
Comp.
I - old
SPA11N60C3
0.890582074
90W
0.882362813
120W
Output Power [W]
22
SuperFET® II MOSFET
Bench test B; AC/DC characteristics
No
DC
AC
[
Vth
BV
Turn-off
Rdson
Qg
Qgd
Qgs
Company
Part ID
Measurement Condition
Id=250 uA
Id=250 uA
switching
losses]
Vgs=10 V, Id=2 A
Fairchild
FDD5N60NZ
Planar
4
600
1.90
13
4.45
2.65
Unit
V
V
Ω
Vds=480 V, Vgs=10 V,
f=1 MHz
pF
COMP. S
SJ MOS
Super-Junction
3
600
0.95
11.96
5.30
1.80
4
10
8
COMP. S’ SJ MOS
SPU7NM60N
FDD5N60NZ
FDD5N60NZ
FCD900N60Z
FCU950N60Z
3
Eoss [uJ]
6
Vgs [V]
Fairchild
FCD900N60Z
Super-Junction
3
600
0.9
13.63
4.35
2.45
4
2
1
COMP.
S’ SJ MOS
SPU7NM60N
FCU950N60
FCD900N60Z
2
0
0
0.0
2.0
4.0
6.0
8.0
10.0
Qg [nC]
12.0
14.0
16.0
18.0
0
100
200
300
400
500
600
Drain source voltage [V]
23
SuperFET® II MOSFET
Bench test B; AC/DC characteristics
• Test board : PSR for LED bulb, input = AC90 V, output = 17 W
• Ambient temperature : 25℃, test time : 60 min, Measured point : top of D-pak
12 ℃ difference
• FDD5N60NZ, planar MOSFET on
board for LED bulb originally
FDD5N60NZ
FCD900N60Z
COMP. S’ SJ MOS
• Two Super-Junction MOSFETs under
test for thermal and electrical
comparison
24
SuperFET® II MOSFET
Bench test B; efficiency comparison
[Input Voltage]
FDD5N60NZ
FCD900N60Z
COMP. S’s SJ MOS
25
SuperFET® II MOSFET
Bench test C
• Test board : L-tube for T8 replacement – SMPS integrated solution
Items
Name/Value
Controller
FL7732_F116
Topology
Buck-Boost
System Power
21W
Output Voltage
70V
FCD900N60Z
Dimensions: 284 (L)  17 (W)  10 (H) [mm]
BD1
T1
F1
Output Current
0.3A
MOSFET (Rdson)
FCD900N60Z
0.9Ω max.
L
MOV1
CF2
CF1
Np: 40T
LF1
LF2
Co1
Lo1
Co2
Co3
Ro1
VLED
Ro2
Do1
R2
D2
• Test Results Summary
- Efficiency: 90.25% ~ 92.7%
- THD: 12.9% ~ 22.06%
- PF: 0.95 ~ 0.99
- Startup time: 0.88 s [90 Vac]
- Temperature: < 60 C°[All components]
- CC deviation: ±4% [Max]
- Output Current Ripple: ±17.3%
R1
N
C2
R7
Na: 11T
C1
U1
1uF
7 COMI
VDD 4
5
8 GND
Gate 2
VS 6
3 GND
CS 1
NC
Q1
R6
R8
R9
R3
R4
C4
R5
Circuit schematic
26
SuperFET® II MOSFET
Bench test C
[ System temperature ]
Vin: 90 Vac
Line filter: 54.7C°
[ System efficiency ]
Rectifier: 58.3C°
MOSFET: 55.1C°
Vin: 265 Vac
Line filter: 30.9C°
Rectifier: 58.4C°
MOSFET: 54.7C°
27
SuperFET® II MOSFET
Bench test C; EMI
• Test Condition: LED load [70 V/300 mA]
[220 Vac: Conduction Live]
[110 Vac: Conduction Neutral]
28
SuperFET® II MOSFET
Bench test D
• Test board : L-tube for T8 replacement – SMPS integrated solution
Dimensions: 295 (L)  18 (W)  10 (H) [mm]
[ System specification]
Items
Name/Value
Controller
FL7701
Topology
PFC-Buck
System Power
18.3 W
Output Voltage
40 V
Output Current
0.47 A
Tested
MOSFET (Rdson)
FCD900N60Z
Vs.
FQD2N60C
92%
91%
90%
89%
88%
87%
86%
85%
84%
83%
FCD900N60Z (0.82 ohm)
FQD2N60C (3.6 ohm)
Good solution at low AC mains!
264Vac
220Vac
180Vac
110Vac
90Vac
[ Efficiency comparison]
29
Why 800 V MOSFET for LED Lighting?
Single Stage PFC Flyback Converter
Input voltage
Passive
Filter
ZCD
BD
PFC
FL6961
FL7930B/C
CC&CV
isolated
feedback
• Voltage stress on MOSFET follows input voltage added up with reflected output voltage
plus voltage spike from resonance between leakage inductance and parasitic inductance
VMOSFET(off) = Vin + NP/NS * Vo + Vvs
Input voltage
(Vac)
Turn ratio of
transformer
Output
voltage
Voltage
overshoot
Ex) 265 Vac*1.414 + 3*45 V + 100 V = 610 V
→ 610 V + 20% margin = 760 V
Trade-off between Vds and Vr
30
SuperFET® II MOSFET
800 V development
• Objective: cost-competitive 800 V Super-Junction MOSFET with best
performance in class in line with 600/650 V SuperFET ® II MOSFETs
Product Features
Design Benefits
• Low Rdson by Super Junction tech.
• Make thermal design of system easier than
Planar MOSFET
• Faster switching speed and Low FOM
• Maximize system efficiency by decrease of
switching loss, esp. at Flyback converter
• SMD package line-up; D-pak
• Fit to small form factor; light weight of SMPS
• Reduced Qg and Eoss
• Higher light load efficiency
• Lower driving requirement
• Wide Range of RDS(on)
• Cover various applications and power rating
31
SuperFET® II MOSFET; 800 V release plan
Product ID
FCPF4300N80Z
FCPF2250N80Z
FCPF1300N80Z / YD
FCPF850N80Z
FCPF650N80Z
FCPF400N80Z
FCPF400N80ZL1
FCPF290N80
FCPF210N80
FCP850N80Z
FCP650N80Z
FCP400N80Z
FCP290N80
FCP210N80
FCD2250N80Z
FCD1300N80Z
FCD850N80Z
FCU4300N80Z
FCU850N80Z
FCB290N80
FCH085N80_F155
FCH060N80_F155
PKG
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220
TO-220
TO-220
TO-220
TO-220
DPAK
DPAK
DPAK
IPAK
IPAK
D2PAK
TO-247LL
TO-247LL
Rdson(max)
[mohm]
4300
2250
1300
850
650
400
400
290
210
850
650
400
290
210
2250
1300
850
4300
850
290
85
60
Engineering
Sample
P10 '14
P10 '14
Available
Available
Available
Available
Available
P10 '14
Available
Available
Available
P9 '14
P10 '14
P9 '14
P10 '14
Available
Available
P10 '14
P9 '14
P12 '14
P12 '14
Available
Customer
Sample
P10 '14
P10 '14
Available
Available
Available
Available
Available
P11 '14
P11 '14
P11 '14
P11 '14
P11 '14
P11 '14
P11 '14
P10 '14
Available
Available
P11 '14
P10 '14
P1 '15
P1 '15
P11 '14
Code S
P11 '14
P11 '14
Released
Released
Released
Released
P9 '14
P12 '14
P12 '14
P12 '14
P12 '14
P1 '15
P12 '14
P12 '14
P10 '14
P10 '14
P10 '14
P12 '14
P11 '14
P2 '15
P2 '15
P12 '14
Remark
Counterpart of FQPF3N80C
Counterpart of FQPF6N80C
Counterpart of FQPF7/8N80C, YDTU Forming
Narrow lead
* Suffix Z : internal zener diode between gate and source
32
SuperFET® II MOSFET
bench test A
• Test board : 45 W Single Stage PFC Flyback converter from LED down light
Compared parameters
Specification
FOM [RDS(ON)×QG]
SuperFET® II MOSFET
1st ES
Comp I’ SJ MOS
14.3 Ω ·nC
25.2 Ω ·nC
270.6 mΩ
236.8 mΩ
3V
3V
Qg
51 nC
88 nC
ESR
0.9 Ω
1.2 Ω
4.96 μJ
6.96 μJ
Eff. (Avg.) @ 230 Vac
89.3%
89.0%
Tc @45W / 230 Vac
47.9⁰C
50.8⁰C
RDS(ON)
VGS(th)
Eoss @ 400 V
Eoss @ 400 V
Package
4.96
TO-220
TO-220
33
SuperFET® II MOSFET
bench test B;
• Test board : 33 W Single Stage PFC Flyback converter from LED driver
•
Input Voltage: 220 VAC ~ 240 VAC
•
Output: 48 V / 600 mA (15 LEDs)
•
Controller: PFC IC
•
Topology: Single Stage PFC Flyback(SSR)
Rg=270Ω
MOSFET
OUT
PFC IC
47Ω
CS
1Ω
800 V MOSFET in TO-220F without
heatsink for space saving
34
SuperFET® II MOSFET
bench test B; Parameter comparison(measured)
Parameter
•
FQPF8N80C
(Fairchild Planar MOS)
I company
(Super Junction MOS)
Vth (@0.4mA)
3.83 V
4.25 V
2.73 V
BVdss (@250uA)
944 V
870 V
907 V
Rds(on) (Typ.)
1.03 ohm
1.2 ohm
0.98 ohm
Crss (@480V)
4.3 pF
5.7 pF
6.9 pF
Ciss (@480V)
660 pF
1531 pF
532 pF
Coss (@480V)
15 pF
39 pF
17 pF
16.2 nC
25.2 nC
30.6 nC
Qg (tot)
•
FCPF1300N80Z
(Fairchild SuperFET® II )
The Qg and Crss of FCPF1300N80Z are lower than the others.
PDrive  f Vth  Qg
– Driving loss is smaller than the the others. 
The Rds(on) of FCPF1300N80Z is lower than FQPF8N80C.
35
SuperFET® II MOSFET
bench test B; Performance
Efficiency
Start-up operation
FQPF8N80C
VDrain: 200 V / div
FCPF1300N80Z
Competitor
IOUT: 500 mA / div
< VIN = 230 VAC, with FCPF1300N80Z >
•
•
Aging: 30 minutes
The efficiency of FCPF1300N80Z shows the best.
36
SuperFET® II MOSFET
bench test B; Operating temperature
66.6°C
< VIN = 230 VAC, FCPF1300N80Z >
•
•
68.6°C
< VIN = 230 VAC, FQPF8N80C >
68.6°C
< VIN = 230 VAC, Competitor>
Aging: 30 minutes
The operating temperature of FCPF1300N80Z is lowest.
37
Fast Recovery MOSFETs
What is FRFET® MOSFET ?
• FRFET® Technology
• Power MOSFET design technology + Lifetime control process
 Fast Recovery Diode Built-in MOSFET
• Application Used
Simplified Typical Application
(Phase-Shifted Full Bridge Converter)
‒ Phase-shifted full bridge topologies (ZVS)
‒ Half / Full bridge topologies (Hard Switching)
‒ 3-phase bridge topologies
• Benefits of FRFET® Technology
‒ Lower trr & Qrr enable to operate high operating frequency
 (over 250 KHz)
‒ Increased Ruggedness characteristics in ZVS topology
‒  Increased Diode recovery dv/dt
‒ Enhanced EMI characteristics due to soft recovery
‒ Reduced losses in hard switching bridge topologies
 Low turn-on MOSFET switching losses & Parasitic diode switching losses
38
Fast Recovery MOSFETs
Turn-on characteristic of FRFET® MOSFET
[ Turn on loss comparison ]
• This waveform shows a difference between normal MOSFET
Vds
Normal MOSFET
FRFET
Ids
and FRFET® MOSFET at turn-on with same load condition.
• FRFET® MOSFET has almost half the area for power loss
compared with normal MOSFET.
• The MOSFET with fast reverse recovery time can increase
Energy :
Vds * Ids
Normal MOSFET
FRFET
system efficiency by reducing turn-on loss.
So, by using a FRFET® MOSFET instead of conventional
solution (MOSFET + FRD), customer can have cost saving.
39
Fast Recovery MOSFETs
Trr comparison b/w FRFET® MOSFET & normal MOSFET
UltraFRFETTM
MOSFET
FDPF7N50U
FRFET® MOSFET
FDPF7N50F
Normal MOSFET
FDPF7N50
40
Fast Recovery MOSFETs
Application of UltraFRFET™ MOSFET
Driver
Normal
MOSFET
(trr > 300 ns)
Old Half-Bridge Solution
Driver
Ultra FRFETTM with
ultrafast trr
FDPF6/8/10N60ZU
FDPF5/7/10/12/16N50U
FDPF5/8N50NZU
New Half-Bridge Solution
41
Fast Recovery MOSFETs
FRFET® MOSFET & FRFET ® II MOSFET line-ups
Suffix
: N – UniFETTM II MOSFET
F – FRFET® MOSFET
U – UltraFRFETTM MOSFET
Z – Internal ESD Diode
Product name
FDP18N20F
FDPF18N20F
FDPF5N50F
FDD5N50F
FQPF5N50CF
FDPF7N50F
FDD6N50F
FQPF9N50CF
FDPF10N50F
FQPF10N50CF
FQPF11N50CF
FQP11N50CF
FDPF12N50F
FDB12N50F
FQPF13N50CF
FDP/PF20N50F
FDA20N50F
FDA24N50F
FDA28N50F
FQPF8N60CF
FQPF10N60CF
FCP11N60F
FCB20N60F
FDPF8N50NZF
FDD5N50NZF
FDPF5N50NZF
PKG
TO-220
TO-220F
TO-220F
D-PAK
TO-220F
TO-220F
D-PAK
TO-220F
TO-220F
TO-220F
TO-220F
TO-220
TO-220F
D2-PAK
TO-220F
TO-220/F
TO-3P
TO-3P
TO-3P
TO-220F
TO-220F
TO-220
D2-PAK
TO-220F
D-PAK
TO-220F
BVDSS
200
200
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
600
600
600
600
500
500
500
ID [A]
18
18
4.5
3.5
5
6
5.5
9
10
11
11
11.5
11.5
13
20
22
24
28
6.26
9
11
20
7
3.7
4.2
RDS(ON) Max
0.145
0.145
1.55
1.55
1.55
1.15
1.15
0.85
0.85
0.61
0.55
0.55
0.7
0.7
0.54
0.26
0.26
0.2
0.175
1.5
0.8
0.38
0.19
1
1.75
1.75
Qg [nC]
20
20
11
11
18
15
15
28
18
43
43
43
21
21
43
50
50
65
80
28
44
40
75
14
9
9
trr [ns]
80
80
65
65
65
85
85
100
95
50
90
90
134
134
100
154
154
264
266
82
90
120
160
80
65
65
42
Fast Recovery MOSFETs
UltraFRFET™ MOSFET & UltraFRFET™ II MOSFET line-ups
Product name
PKG
BVDSS
ID [A]
RDS(ON) Max
Qg [nC]
trr [ns]
FDPF16N50U
TO-220F
500
15
0.48
32
65
FDPF12N50U
TO-220F
500
10
0.8
21
65
FDB12N50U
D2-PAK
500
10
0.8
21
65
FDPF10N50U
TO-220F
500
8
1.05
18
44
FDPF7N50U
TO-220F
500
5
1.5
12.8
40
FDPF5N50U
TO-220F
500
4
2
11
36
FDD5N50U
D-PAK
500
3
2
11
36
FDPF6N60ZU
TO-220F
600
4.5
2
14.5
36
FDPF8N60ZU
TO-220F
600
6.5
1.35
20
40
FDPF10N60ZU
TO-220F
600
9
0.8
31
45
FDPF8N50NZU
TO-220F
500
6.5
1.2
14
35
FDPF5N50NZU
TO-220F
500
4
2
9
30
* Suffix : N – UniFETTM II MOSFET
F – FRFET® MOSFET
U – Ultra FRFETTM MOSFET
Z – Internal ESD Diode
43
100 / 150 V MOSFETs
SMD packages
Part Number
PKG
BVDSS
ID [A]
FDT3612
FQT7N10
FQT7N10L
FDD86102
FDD3672
FDD3670
FDD3860
FDD3680
FDD3690
FDD850N10L
FQD19N10
FQD19N10L
FDD120AN15A0
HUF76609D3/S
FQD13N10
FQD/U13N10L
FQD7N10L
FDD2572
FDD2582
FQD5N15
SOT-223
SOT-223
SOT-223
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
D/IPAK
DPAK
D/IPAK
DPAK
DPAK
DPAK
DPAK
100
100
100
100
100
100
100
100
100
100
100
100
150
100
100
100
100
150
150
150
3.7
1.7
1.7
36
44
34
42
25
22
15.7
15.6
15.6
14
10
10
10
5.8
29
21
4.3
RDS(ON) Max
10 V
4.5 V
0.12
0.13@6 V
0.35
0.35
0.38@5 V
0.024
0.038@6 V
0.028
0.047@6 V
0.032
0.035@6 V
0.036
0.046
0.051@6 V
0.064
0.071@6 V
0.075
0.1
0.1
0.11@5 V
0.12
0.17@6 V
0.16
0.165
0.18
0.18
0.2@5 V
0.35
0.38@5 V
0.054
0.075@6 V
0.066
0.099@6 V
0.8
-
Qg [nC]
14
5.8
4.6
13.4
24
57
22
38
28
12.3
19
14
11.2
13
12
8.7
4.6
26
19
5.4
** Suffix : L – Logic level gate
44
100 / 150 V MOSFETs
PowerTrench® MOSFET; enable a drastic reduction of FOM
Conventional
Trench Gate MOSFET
Trench MOSFET
with thick oxide at the bottom
The latest
PowerTrench® MOSFET
Higher Cell density
• Charge Balance technology
• Reduces Epi Resistance
45
100 / 150 V MOSFETs
PowerTrench® MOSFET; improved efficiency
•
Shielded Gate Trench Technology (40 V~200 V)
•
•
•
•
Expanded voltage range of current Charge Balance Shielded Gate Si Technology to lower RSP
and reduce FOM’s
Low gate charge for a given RDS(ON) (low figure of merit)
Soft reverse recovery to reduce voltage spikes in SR
Applications
•
•
•
•
•
•
•
Synchronous rectification for LED lighting
Micro solar inverters and off line UPS systems
High efficiency DC-DC converters for LED lighting
High current DC motor drives
Battery management
PDU /BFU in telecom Power distribution
Hot Swap stage
46
100 / 150 V MOSFETs
PowerTrench® MOSFET line-up in TO-220/F & D2-PAK
Part Number
Package
BVDSS
Min. (V)
Technology
RDS(ON) Max (mΩ) @ VGS =
10V
Qg Typ. (nC)
@VGS=5V
FDT1600N10ALZ
FDD1600N10ALZ
FDPF680N10T
FDPF3860T
FDB3860
FDP150N10
FDP150N10A_F102
FDB150N10
FDP120N10
FDB120N10
FDP100N10
FDP090N10
FDP085N10A_F102
FDPF085N10A
FDD770N15A
FDPF770N15A
FDD390N15ALZ
FDPF390N15A
FDB390N15A
FDPF190N15A
FDB110N15A
SOT-223
D-PAK
TO-220F
TO-220F
TO-263(D2PAK)
TO-220
TO-220
TO-263(D2PAK)
TO-220
TO-263(D2PAK)
TO-220
TO-220
TO-220
TO-220F
D-PAK
TO-220F
D-PAK
TO-220F
TO-263(D2PAK)
TO-220F
TO-263(D2PAK)
100
100
100
100
100
100
100
100
100
100
100
100
100
100
150
150
150
150
150
150
150
PT5
PT5
PT3
PT3
PT3
PT3
PT5
PT3
PT3
PT3
PT3
PT3
PT5
PT5
PT5
PT5
PT5
PT5
PT5
PT5
PT5
160
160
68
38.2
37
15
15
15
12
12
10
9
8.5
8.5
77
77
77
40
39
19
11
2.78
2.78
13
23
21
53
16.2
53
66
66
76
89
31
31
8.6
8.6
8.6
14.3
14.3
30
47
ID (A)
PD (W)
5.6
6.8
12
20
30
57
36
57
74
74
75
75
68
10.42
14.9
24
33.8
71
110
91
0.88
170
170
208
208
188
18
7
26
10
19
17.4
65
56.8
20
63
22
75
33
234
47
650 – 1,000 V Planar MOSFETs
Product name
FQPF7N65C
FDPF15N65
FQD2N80
FQP3N80C
FQPF3N80C
FQP6N80C
FQPF6N80C
FQP7N80C
FQPF7N80C
FQP8N80C
FQPF8N80C
FQD2N90
FQU2N90
FQP4N90C
FQPF4N90C
FQP6N90C
FQPF6N90C
FQP8N90C
FQPF8N90C
FQP9N90C
FQPF9N90C
FQD2N100
FQU2N100
PKG
TO-220F
TO-220F
DPAK
TO-220
TO-220F
TO-220
TO-220F
TO-220
TO-220F
TO-220
TO-220F
D-PAK
I-PAK
TO-220
TO-220F
TO-220
TO-220F
TO-220
TO-220F
TO-220
TO-220F
D-PAK
I-PAK
BVDSS
650
650
800
800
ID [A]
7
15
1.8
3
RDS(ON) Max
1.4
0.44
6.3
4.8
Qg [nC]
28
48.5
12
13
800
5.5
2.5
21
800
6.6
1.9
27
800
8
1.55
35
900
1.7
7.2
12
900
4
4.2
17
900
6
2.3
30
900
6.3
1.9
35
900
8
1.4
45
1000
1.6
9
12
48
200 – 400 V Planar MOSFETs
SMD packages
Part Number
Package
BVDSS
I D [A]
FQT4N20L
FQT4N25
FDT3N40
FDD2670
FQD12N20L
FQU12N20
FDD10N20LZ
FDD7N20
FDD6N20
FQD4N20
FQD16N25C
FQD/U9N25
FDD7N25LZ
FDD6N25
FQD7N30
FQD6N40C
FQU5N40
FDD/U3N40
SOT-223
SOT-223
SOT-223
DPAK
DPAK
IPAK
DPAK
DPAK
DPAK
DPAK
DPAK
D/IPAK
D/IPAK
DPAK
DPAK
DPAK
IPAK
D/IPAK
[V]
200
250
400
200
200
200
200
200
200
200
250
250
250
250
300
400
400
400
0.85
0.83
2
3.6
9
9
7.6
5
4.5
3
16
7.4
5.5
4.4
5.5
4.5
3.4
2
FDU6N25
IPAK SL
250
* Suffix : L – Logic level gate,
** IPAK SL : short lead type
4.4
RDS(on).max [ohm]
@ VGS=
10V
4.5V
1.35
1.4@5V
1.75
3.4
0.13
0.28
0.32@5V
0.28
0.36
0.38@5V
0.69
0.8
1.4
0.27
0.42
0.65
0.77@5V
1.1
0.7
1
1.6
3.4
-
1.1
-
Qg Typ.
[nC]
4
4.3
4.5
27
16
18
6
5
4.7
5
41
15.5
6
4.5
13
16
10
4.5
4.5
Z – Zener Protection
49
200 / 250 V Planar MOSFETs
TO-220 / F
Part Number
Package
BVDSS [V]
ID [A]
FDP2614
FDP61N20
FDP52N20
FDPF39N20
FDP/PF18N20F
FDP/PF2710
FDP/PF51N25
FDPF44N25
FDP/PF33N25
FQPF16N25
TO-220
TO-220
TO-220
TO-220F
TO-220/F
TO-220/F
TO-220/F
TO-220F
TO-220/F
TO-220
200
200
200
200
200
250
250
250
250
250
62
61
52
39
18
50
51
44
33
16
RDS(on)
Max [ohm]
0.027
0.041
0.049
0.066
0.145
0.0425
0.06
0.069
0.094
0.23
Qg Typ.
[nC]
76
58
19
38
20
78
55
47
36.8
27
50
200 / 300 V Fast Recovery Diodes
Part Number
FFPF06UP20S
FFPF10UP20S
FFPF12UP20DN
FFPF15UP20S
FFPF20UP20DN
FFPF30UP20S
FFD06UP20S
FFD10UP20S
FFD20UP20S
FFB20UP20DN
FFB20UP20S
FFPF10UP30S
FFPF20UP30DN
FFB20UP30DN
VRRM [V]
200
200
200
200
200
200
200
200
200
200
200
300
300
300
PKG
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
TO-220F
DPAK
DPAK
DPAK
D2PAK
D2PAK
TO-220F
TO-220F
D2PAK
IF (AV) [A]
6
10
6*2
15
10 * 2
30
6
10
20
10 * 2
20
10
10 * 2
10 * 2
VFM [V] trr (max) [ns]
1.15
35
1.15
35
1.15
35
1.15
45
1.15
45
1.15
50
1.15
35
1.15
35
1.15
45
1.15
40
1.15
45
1.4
45
1.3
45
1.3
45
51
600 V Fast Recovery Diodes
TECH
Ultra Fast
Hyper Fast
I / II
Stealth II
Part Number
RURP860
VRRM [V]
600
PKG
TO220
IF (AV) [A] VFM [V]
8
1.5
trr (max) [ns]
70
FFPF10UP60S
600
TO220F
10
2.2
90
FFPF10UA60S
600
TO220F
10
2.3
120
RURP1560
600
TO220
15
1.5
60
FFPF20UP60DN
600
TO220F
10*2
2.2
90
FFPF20UA60DN
600
TO220F
10*2
2.3
120
FFD04H60S
RHRD660S
FFP/PF08H60S
FFPF10H60S
RHRP1560
RHRP3060
FFPF04S60S
600
600
600
600
600
600
600
DPAK
DPAK
TO220/F
TO220F
TO220
TO220
TO220F
4
6
8
10
15
30
4
2.1
2.1
2.1
2.5
2.1
2.1
2.6
35
30
35
35
40
45
25
FFD08S60S
600
DPAK
8
2.6
30
FFP/PF08S60S
600
TO220/F
8
2.6
30
FFP/PF08S60SN
600
TO220/F
8
3.4
25
FFP/PF/H15S60S
600
TO220/F/TO247
15
2.6
35
FFP/H30S60S
600
TO220/TO247
30
2.6
40
52
Boostpak - Introduction
Vo
Vin
Vin
Vo
OUTPUT
[ Buck circuit ]
[ Boost circuit ]
+
MOSFET
SBD
BoostPak
Benefits
• Reduction of PCB size and system cost
• Better reliability with small leakage current of diode at high temperature
• Less assembly work
53
Boostpak – Construction
[ Inner view ]
3
[ External view ]
100V MOSFET
N-Channel PowerTrench®
MOSFET
150V
NP diode
1 2
Merit : Much lower leakage current
than Schottky Diode
at high temperature
 Improve system reliability
[ Product Line-up]
Product ID
BVDSS [V]
4 5
R DS(on) max [mΩ]
Package
Po [W]
ID [A]
Qg [nC]
Release Plan
Eng. sample
Release
FDD850N10LD
100
75
DPAK 5lead
~ 40 W
15.7
22.2
Available
Released
FDD1600N10ALZD
100
160
DPAK 5lead
~ 25 W
6.8
2.78
Available
Released
54
Boostpak – Diode Leakage Current
Leakage current (typ.) @ VR=100V
@TJ=25’C
@TJ=100’C
@TJ=150’C
100 V 5 A Schottky Diode
0.740 uA
146.00 uA
3300.00 uA
150 V 5 A NP Diode in BoostPak
0.003 uA
0.30 uA
4.81 uA
55
Boostpak – Example for LED lighting
LED
8
HV
DC-DC
controller
5
2
ADIM GATE
4
RT
3
3
MOT
1
8
VCC
INV
2
ZCD
FL6961
COMP
CS
GND
1
BoostPAK
6
5
Regulator
OUT
GND
6
VCC
CS
7
4
Light control unit
(Sensor, MCU)
Primary side control (FL6961)
Secondary side control (Buck controller)
- VCC regulation for output voltage regulation
- Primary Side Regulation without additional feedback
circuit from 2ndary side
- Power Factor Correction
- Output Current regulation with current mode control
- Non Phase-Cut Dimming
- MCU Power : Regulator
56
THANK YOU