Transcript 3rd Gen SiC Trench MOSFETs

New Products Under Development
3rd Gen SiC MOSFET
c 2014 ROHM Co.,Ltd. All Rights Reserved
Schematic Cross Section of SiC Trench MOSFET
Ordinary designed trench MOSFET
Conventional single-trench
(Gate trench only)
May lead to destruction of gate oxide
at the bottom of the gate trench
c 2014 ROHM Co.,Ltd. All Rights Reserved
ROHM 3G SiC MOSFET
Double-trench
(Source trench and gate trench)
Successfully reduced the electric field
at the bottom of the gate trench
1
Drain-source Bias Simulation Results
2
Condition: Same Vds supplied in both cases
Standard trench MOSFET
gate trench bottom
ROHM 3G SiC MOSFET
gate trench bottom
Eox: 35% lower
(MV/cm)
1.5
1.2
0.9
0.6
0.3
0.0
Suppression of the electric field concentration at the bottom of the gate trench is
achieved by the double trench structure of ROHM 3G SiC MOSFET
c 2014 ROHM Co.,Ltd. All Rights Reserved
On-state Characteristics of 3G SiC Trench MOSFET 3
Vgs=20V
60
Vgs=18V
Vgs=16V
55
50
Ta = 25ºC
Pulsed
Ron(Ω) at Id = 15A
40
35
Vgs=12V
30
25
20
Vgs=10V
15
Positive temp.-coefficient of Ron
0.12
Vgs=14V
45
Drain Current (A)
0.14
10
0.10
150℃
0.08
0.06
Full turn on
0.04
25℃
0.02
Id = 15A
Vgs=8V
5
Recommended Vgs
0.00
0
0
2
4
6
8
Drain - Source Voltage (V)
10
Id-Vds characteristics
▪
▪
10
12
14
16
Vgs (V)
18
20
Ron-Vgs characteristics
Low Ron at recommended Vgs of 18V
A positive temperature-coefficient of on-resistance over Vgs of 10.5V,
thus lower risk of thermal runaway
c 2014 ROHM Co.,Ltd. All Rights Reserved
Comparison of Temperature Dependency of Ron
0.14
Chip size: 13.6mm2
Ron (Ω) at Id = 15A
0.12
0.10
Planar MOSFETs
0.08
75mΩ
50%
Reduction
0.06
1.9 times
40mΩ
Trench MOSFETs
0.04
0.02
Vgs = 18V
0.00
25
50
75
100
125
Temperature (℃)
150
Ron-Temperature characteristics
▪ Compared to 2G planar MOSFET, Ron reduced by half throughout the
entire temperature range
c 2014 ROHM Co.,Ltd. All Rights Reserved
4
Ciss vs Ron
5
5000
Reduction from 2G DMOS
Ciss: by 35%
Ron: by 50%
with the same chip size
4500
4000
Ciss (pF)
3500
3000
2G DMOS
2500
80mΩ 1200V
2000
1500
1000
Ciss: by 70% at the same Ron
3G UMOS
500
40mΩ 1200V
3G UMOS
0
0
20
40
60
80
100
120
140
160
80mΩ 1200V
Ron@25℃ (mΩ)
The combination of Lower Ron & Ciss reduced both conduction and switching losses
c 2014 ROHM Co.,Ltd. All Rights Reserved
Vgs vs Qg
6
35%
18
16
3G UMOS
2G DMOS
40mΩ 1200V
80mΩ 1200V
14
Vgs[V]
12
10
8
Ta = 25oC
Vdd = 400V
Id = 10A
Pulsed
6
4
2
Same chip size
0
0
20
40
60
80
Qg[nC]
100
120
35% Lower Qg compared to ROHM 2G SiC DMOS
c 2014 ROHM Co.,Ltd. All Rights Reserved
Switching Loss Reduction
1800
7
Vdd=800V
Vgs=18V/-5V
L=500uH
Rg=0 Ω
Ta=25oC
1600
1400
1200
1000
Eon SiC Planar MOS
Eon SiC Trench MOS
800
600
Eoff SiC Planar MOS
400
Eoff SiC Trench MOS
200
0
0
10
20
30
40
Rated Vds of 1200V
Same chip size
Id (A)
Id
(A)
Total switching loss reduced by 30% compared to ROHM 2G SiC MOSFET
c 2014 ROHM Co.,Ltd. All Rights Reserved
Reverse Recovery Characteristics of Body-diode
8
50
40
30
20
10
0
-10
-20
-30
-40
-50
Si-SJ MOS
trr ~ 600nsec
I [A]
I [A]
measurement
condition
E = 300V
Rg = 100Ω
Id = 36A
50
40
30
20
10
0
-10
-20
-30
-40
-50
3G SiC trench MOS
trr ~ 30nsec
-0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
time [µs]
time [µs]
Reverse recovery current of body-diode is extremely smaller than Si-MOSFETs
c 2014 ROHM Co.,Ltd. All Rights Reserved
Lineup of 3G SiC MOSFET
P/N
SCT30XXKL
SCT30XXAL
9
Package
BVDSS
Vgs
RDSon
TO247, Bare die
1200V
22V / -10V
22mΩ
TO247, Bare die
1200V
22V / -10V
30mΩ
TO247, Bare die
1200V
22V / -10V
40mΩ
TO247, Bare die
650V
22V / -10V
17mΩ
TO247, Bare die
650V
22V / -10V
22mΩ
TO247, Bare die
650V
22V / -10V
30mΩ
Bare die
Package
TO247
c 2014 ROHM Co.,Ltd. All Rights Reserved
Status
Under
development