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Introduction of
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November, 2013
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Fairchild
Confidential
In taking receipt of this Material, recipient acknowledges
and agrees to maintain its confidentiality and use the
Material for the sole purpose of business endeavors with
Fairchild Semiconductor. Sharing with 3rd parties is
prohibited.
2
Fairchild Confidential
HV Technology & Products
3
High Voltage Product Portfolio
SPM® Products
HPM
IGBT
MOSFET
Motion® SPM Modules
FS 600V IGBT
- SPM 1 Series<10 kW
- 600/650 V Planar
- SPM 2 Series<5 kW
- 650 V Trench
- SPM 3 Series<2.2 kW
- SPM 4 Series<2.2 kW
FS 1200V IGBT
-SPM 45 LV Series<1.5 kW
-1200/1000 V
-SPM 45 Series<1.5 kW
- SPM 5 Series<0.1 kW
- SPM 7 Series<0.1 kW
- PFC SPM® Series
High Power Module
(HPM)
FS Trench IGBT
- 1000~1400 V
FS1/2 SA T IGBT
PT Trench IGBT
300 ~360 V
NPT Trench IGBT
1000 V, 1200 V
4
Super-Junction
MOSFET
- 600~800 V
SuperFET® I/II
MOSFET
- 600 V SupreMOS®
MOSFET
- SJNG 650 V
Diode
UF Diode
200 ~1200 V
HF Diode
SiC BJT
1200 V
600 V, 1200 V
Stealth™ Diode
MV MOS
- 40~150 V
PowerTrench®
MOSFET
- UFT, UFP ~250 V
600 V, 1200 V
HV P MOSFET
- 200~650 V
UniFET™ I/II MOSFET
- 50~1000 V
QFET® MOSFET
& CFET
& QFET® V2 Series
- Legacy FET
Damper Diode
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SiC
Duexpeed Diode
600 V
1500 V, 1600 V
SiC Diode
SPM® Modules & HPM Portfolio
HPM
Application
Industrial Inv.
SPM 7 Series
SPM 55 Series
Renewable
PQFN 12.9*12.9
500 V / ~1 A
Full mold DIP
600 V / ~10 A
SPM 1 Series
600 V / 50 A ~ 75 A
*1200 V / 25 A ~ 50A
F1
F2
SPM 2 Series
System A/C
600 V / 15 A ~ 75 A
*1200 V / 10 A ~ 35 A
Small
Industrial Inv.
& Pump
Competitive cost
HP Room A/C than SPM5
SPM 3 Series
Optimized for
Refrigerator & W/M
LP Room A/C
Expand
Business Scope
600 V / ~ 30 A
SPM 45 Series
600 V / 5 A ~ 20 A
W/M
SPM 45 LV Series
Power tools
Refrigerator
40 V / 40 A ~ 60 A
SPM 5 Series
Dish washer
Small Pump
500 V / ~1.5 A
250 V / ~3 A
Fan motor
50 W
5
100 W
1 kW
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2 kW
5 kW
10 kW~ Power
HV Package Portfolio
Through-hole
Type
Power
Discrete
SMD
Type
SPM®
Modules
I2PAK
IPAK
TO220/TO220F
TO247
TO264
TO3P/F
TO92L
D2PAK
DPAK
MLP_33S
PQFN_56P
PQFN88
SO8
SOT223
SPM 1 Series
SPM 2 Series
SPM 3 Series
SPM 4 Series
SPM 45 Series
SPM 45 LV Series
Power
Module
SPM 5 Series
SPM 7 Series
F1
Power-247
MLP-33
SOT223
SPM 5 Series
~0.1 kW
SPM 45 Series
~1.5 kW
SPM 7 Series
~40W
F1
HPM
F2
WF Biz
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SO8
Wafer
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SPM 2 Series
~5 kW
SPM 4 Series
~3 kW
F2
SPM 3 Series
~2.2 kW
SPM 1 Series
~10 kW
HV Application by Power Range
The range of products and application expertise are broad and com
prehensive enough to meet a variety of customers’ needs
1 Watt
Communication
Lighting
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100 Watt
1 KWatt
50 KWatt
Computing
Indus Motor Control
Consumer
Industrial Power
Major HA(White Goods)
Small HA
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Development Directions by Products
•
•
•
•
•
•
•
•
SPM® Modules
1200 V/~50 A 3-phase
inverter
600 V/~75 A 3-phase
inverter
250 V, 500 V/~3 A 3phase inverter
600 V PFC/Converter
module
IGBTs
• Field Stop technology:
Short-circuit rated
IGBTs, Diodeembedded IGBTs,
High speed IGBTs
MOSFETs
• Super-junction
technology :
SuperFET® II MOSFET,
SupreMOS® MOSFET,
SJ NG
• Shielded gate
technology:
PowerTrench®
MOSFET, PTNG
Diodes/HVIC
Stealth™ diode with
better softness factor :
600 V/1200 V
NP Diode: 150 V, 600 V
1200 V HVIC(HDJ4)
Embedded Motor
Controller HVIC (HDG7,
HPMs
• Custom module for PV
• Standard module
- HPM F-series (F1, F2
etc)
• SiC Module
SiCs
• SiC BJT : 1200 V,
1700 V
• SiC Diode : 650 V,
900 V, 1200 V, 1700 V
MXIC)
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Product Ordering Information
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SPM 3 Series
F S B F 15 C H 60 B T L
None : Long(normal) Lead
T
: Short lead
None : Normal ver.
T
: Economic ver.
None : V2 Mini DIP SPM
B
: V4 Mini DIP SPM with Full Pack
C
: V4 Mini DIP SPM with DBC
VOLTAGE RATING (  10)
H : HIGH SWITCHING FREQUENCY
C : High dv/dt Type
CURRENT RATING
S : MINI-SPM ( SPM 3 Package with Ceramic )
F : MINI-SPM ( SPM 3 Package with Full mold )
B : MINI-SPM ( SPM 3 Package with DBC)
B : NO-THERMISTOR
S : Divided N-terminal
FAIRCHILD SEMICONDUCTOR
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PFC SPM 3 Series
F P D B 30 P H 60 B
None : Version 1
B
: Version 2
VOLTAGE RATING (  10)
H : HIGH SWITCHING FREQUENCY
P : Bridgeless topology
B : Conventional Boost type
CURRENT RATING
S : MINI-SPM ( SPM 3 Package with Ceramic )
F : MINI-SPM ( SPM 3 Package with Full mold )
B : MINI-SPM ( SPM 3 Package with DBC)
D : Shunt Resistor
A : NO-Shunt Resistor
P : Full switching
S : Partial switching
FAIRCHILD SEMICONDUCTOR
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SPM 45 Series
F N A 4 10 60 X X X
Customer Option
No suffix : Normal Version
Voltage Rating
60 : 600 V rating
SPM 45 Package
Current Rating
05 : 5 A rating
10 : 10 A rating
15 : 15 A rating
20 : 20 A rating
Product Option
Please see right table.
Product Category
N : Inverter module
P : Converter module with PFC part
M : CI module (Converter + Inverter)
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Silcon Technology
No suffix : Planar NPT IGBT
*no next suffix
B : Planar NPT IGBT
*presence of next suffix
F : Planar Field-Stop IGBT
T : Trench Field-Stop IGBT
S : SuperFET® Technology
Suffix
A
B
C
D
E
F
G
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Lead-Forming Option
No Suffix : SPM26-AAA
(Short-lead Normal forming)
1 : SPM26-AAB
(Short-lead & double forming
signal side and N terminal)
2 : SPM26-AAC
(Long-lead Normal forming)
3 : SPM26-AAD
(Long-lead & double forming
signal side)
4 : SPM26-AAE
(Extra-long lead & Normal
forming)
5 ~9 : Other Lead-option
Substrate
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Thermister
Yes
Yes
Yes
No
No
Product Option
Normal
Fast
Low Cost
Normal
Fast
Ceramic
No
Low Cost
SPM 5 Series
F S B 5 02 50 X X X
Lead option
None : Dip
T: Double Dip
S : Surface mount
B : Zigzag
Power RATING
Voltage rating
06 : 60 V
25: 250 V
50: 500 V
5 : SPM 5 Series
B : Fullpackage
C : Ceramic
S : Divided Three Thermal
FAIRCHILD SEMICONDUCTOR
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Silicon version
NC : Ver. 1 (CFET)
U : Ver. 1.5 (UniFET™ I MOSFET)
UD : Ver. 1.5 (UniFET™ I MOSFET + BSD)
A : Ver. 2.0
(UniFET™ I MOSFET + TSU + BSD)
SF : SuperFET® MOSFET Ver.
(SuperFET® II MOSFET + TSU + BSD)
HPM : F1 & F2 Series
FP F2 G 100 HB 12 A 3
(8) Option
#1~4
(7) Generation
(6) Voltage Rating(x100)
(5) Configuraton
(4) Current Rating or
System Power rating
(3) Module type
(4) Current Rating(x1) or System Power rating(ex. 2.5kW2P5)
(5) Topology (2 digit)
BF: Boost / TL: TNPC / NL: NPC
MF: Mixed Full-Bridge / NR: NPC Reactive control
HB: Half-Bridge (2PAK) / FB: Full-Bridge (4-PAK)
TB: 3-Phase (6-PAK)
/ CB: CIB (Converter Inverter Brake)
FH: FB & Heric
SB: Single Buck-Boost / DB: Double Buck-Boost
PV: Single module solution
(6) Voltage Rating (x100)
(7) Generation code
A: 1st Gen. / B: 2nd Gen. / C: 3rd Gen.
(8) Option #1; SiC Diode
blank: Si-based Diode
S: SiC Diode
(9) Option #2; Pin Configulation
blank: 12mm PressFIT (default), 5: 17mm PressFIT (default)
2 : 12mm PressFIT (option),
6: 17mm PressFIT (option)
3 : 12mm Solder (default),
7: 17mm Solder (default)
4 : 12mm Solder (option),
8: 17mm Solder (option)
9 : Termial for T1~T5
(2) Package Type
(1) Fairchild Power Module
(Not Released Yet.
First release will be customized product!)
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(1) Fairchild Power Module
(2) Package Type
F1/2/3 : F1/2/3
T1/2/3/4/5 : EconoPAK1/2/3/4/5 (Terminal)
E2/3 : EconoPIM2/3 (Pin type)
(3) Module type
G: IGBT / M: MOSFET / D: Diode / J: SiC BJT / C: Custom
Fairchild Confidential
(10) Option #3; DBC type & NTC
Blank: DBC/Al2O3 with NTC, M: DBC/Al2O3 w/o NTC
N
: DBC/AlN with NTC,
R : DBC/AlN w/o NTC
(11) Option #4; Suffix code
Field Stop IGBT
F G H 75 T 65 U P D x
Option : FRD Option
Blank : Stealth™ Diode / F : Ultrafast, etc
Existing or Non-existing of built-in Diode
Blank : without Diode / D : Built-in Diode
Generation
F/FT : Gen1 / M : Gen2 / P : Gen3
Speed & Feature
S : SMPS
L : Low VCE(sat)
/
/
U : Ultrafast
Voltage Rating ( ⅹ10)
Technology
N : Planar process
T : Trench process (cf. 1200 V Gen1 : N)
S : Shorted Anode(only for IH)
Current Rating
Package Type
P : TO-220
AF : TO-3PF
L : TO-264
D : D-PACK
/
/
/
/
PF : TO-220F /
H : TO-247
/
U : I-PACK
/
2
B : D -PACK
IGBT
Fairchild Semiconductor
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A : TO-3PN
Y : Power-247
I : I2-PACK
PT/NPT IGBTs
F G L 40 N 120
A N D
Existing or Non-existing of built-in Diode
Blank : without Diode
D
: Built-in Diode
Technology
N : NPT / NT : NPT + Trench / Blank : PT
Speed(Max Fall Time)
A : 100 ns / B : 200 ns / C : 500 ns / LS : >1 us
Voltage Rating ( ⅹ10)
N : N-channel
Current Rating
Package Type
P : TO-220
/
H : TO-247
/
I : I2-PACK /
PF : TO-220F
L : TO-264
D : D-PACK
IGBT
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/
/
/
A : TO-3P
U : I-PACK
B : D2-PACK
PDP (PT) Trench IGBT
F G PF 4 5 33 D xxxx
Option
Built-in FRD
Voltage Rating (x10)
Die Size
Technology Generation
Package Type
IGBT
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Fairchild Confidential
(1) Package Type
P : TO-220 D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO-264 H : TO-247
(2) Technology Generation
3 : 3rd Gen. PDP Trench IGBTs
4 : 4th Gen. PDP Trench IGBTs
(3) Die Size
5: 50 A
6: 70 A
7: 90 A
(4) Voltage Rating (x10)
33 : 330 V
36 : 360 V
60 : 600 V
(5) Option
Lead forming, Potting etc.
SMPS & Other Legacy IGBT
HGT G 30 N 60 A 4 D
Option
D : Built-in Diode / S : Surface Mount
C : Current Sense / V : Voltage Clamping
Generation
1 : Gen1
4 : SMPS
2 : Gen2
N : NPT
3 : Gen3
Speed(Max Fall Time at TJ=150℃)
A : 100 ns / B : 200 ns / C : 500 ns
Voltage Rating ( ⅹ10)
N : N-channel
Current Rating
Rating at TC=+75℃, 100 kHz Operation
Gen1, 2, 3 Continuous Current Rating : T C=+110℃
Package Type
D : TO-251 / TO-252
1S : TO-262 / TO-263
P : TO-220
G : TO-247
1Y : TO-264
Fairchild Semiconductor IGBT
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HV MOSFET Overall
Forming
F C H 76 N 60 N
• Empty : normal type / T : Potting type
Option
• F : Fast recovery
•U : Ultra fast recovery
Series
• Empty: Standard Product
(QFET® MOSFET/UniFET™ MOSFET/Super Junction MOSFET)
• L : Logic Level Product
• F : Fast Recovery MOSFET
• N : New Version( 2nd of UniFET™ MOSFET, SupreMOS® MOSFET )
• Z : Zener b/w G and S
•C/V2 : Advanced QFET C/V2 series
Voltage Rating ( Χ 10 )
Channel Polarity
• N : N-Channel
• P : P-Channel
Current Rating
Package
• A : TO-3P
• B : D2-PAK
• D : D-PAK
• E : TO-126
• H : TO-247
• N : TO-92
• P : TO-220
• S : 8-SOP
• AF : TO-3PF
• I : D2-PAK
• U : I-PAK
• G : 8 DIP
• L : TO-264
• NL : TO-92L
• PF : TO-220F
• T : SOT-223
Base Technology
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• Q : QFET® Technology
• C : Super-Junction Technology
Fairchild Confidential
• D : UniFET™ Technology
Super-junction MOSFET
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Fairchild Confidential
SuperFET® MOSFET and SupreMOS® MOSFET
F C P 25 N 60 x x
(5)Option
(4)Generation
(3)Voltage Rating (x10)
N: N channel
Current Rating
(2)Package Type
(1)Technology
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Fairchild Confidential
(1) Technology
C : Super-junction MOSFET
(2) Package Type
P : TO-220 D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO-264 H : TO-247
MT : PQFN88
(3) Voltage Rating (x10) : 600 / 650 V
(4) Generation
nothing : SuperFET® MOSFET
N : SupreMOS® MOSFET
(5) Option
F : Fast Recovery type
YDTU : lead forming
SuperFET® II MOSFET
F C P190N 60 x x
(5)Option
(4)Generation
(3)Voltage Rating (x10)
N: N channel
Rds(on) max
(2)Package Type
(1)Technology
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(1) Technology
C : Super-junction MOSFET
(2) Package Type
P : TO-220 D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO-264 H : TO-247
MT : PQFN88
(3) Voltage Rating (x10) : 600 / 650 V
(4) Generation
nothing : SuperFET® II MOSFET
(5) Option
F : Fast Recovery type
YDTU : lead forming
Planar MOSFET
(1) Technology
F D D 7 N 60 N Z F
(5) Body Diode Type
Zener Protection
(4) Version
(3) Voltage Rating (x10)
N: N channel, P: P channel
Id ( 7A )
(2) Package Type
(1) Technology
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Q : QFET® MOSFET,
D : UniFET™ MOSFET
(2) Package Type
P : TO-220, D : D-PAK
PF : TO-220F, U : I-PAK
A : TO-3PN, B : D2-PAK
AF : TO-3PF, I : I2-PAK
L : TO-264, H : TO-247
(3) Voltage Rating (x10) :
50: 500 V, 60: 600 V
(4) Version
C : QFET® C Series
N : UniFET™ II Series
(5) Body Diode Type
F : FRFET® Series
( trr : 80 ~ 100 ns )
U : Ultra FRFET® Series
( trr : 40 ~ 50 ns )
Tip : Normal FET
( trr : 180 ~ 200 ns )
PowerTrench® MOSFET Overall
F D P 030 N 10
A L7
Option
• L7 : D2-PAK 7lead
PowerTrench Generation
• Empty: PowerTrench 3
• A: PowerTrench 5
• B: PowerTrench 7
• C: PowerTrench Next Generation
Voltage Rating ( × 10 )
Channel Polarity
• N : N-Channel
• P : P-Channel
RDS(ON) Max. [mΩ]
Package
• A : TO-3P
• B : D2-PAK
• D : D-PAK
• MS : PQFN56
• H : TO-247
• N : TO-92
DMOS
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• P : TO-220
• S : 8-SOP
• AF : TO-3PF
• PF : TO-220F
• I : I2-PAK
• U : I-PAK
UltraFET Trench
F D P 047 AN 08 Ax
(3) Rg differentiation
(2)Voltage Rating (x10)
N: N channel
Rdson max (÷ 10)
(1)Package Type
DMOS
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Fairchild Confidential
(1) Package Type
P : TO-220 D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
I : I2-PAK
H : TO-247
MS : PQFN56
(2) Voltage Rating (x10) :
06 : 60 V
08 : 75 V
(3) Rg differentiation
A0 : Low Rg
A1 : High Rg, but mostly A0
products are avaialble
PowerTrench® MOSFET
F D P 030 N 06 x
(3)Technology
differentiation
(2)Voltage Rating (x10)
N: N channel
Rdson max (÷ 10)
(1)Package Type
DMOS
Fairchild semiconductor
Exception : FDPF3860T(100 V), FDP3205 (55 V)
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Fairchild Confidential
(1) Package Type
P : TO-220 D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
I : I2-PAK
H : TO-247
MS : PQFN56
(2) Voltage Rating (x10) :
04: 40 V
06 : 60 V
08 : 75/80 V
10 : 100 V
15 : 150 V
(3) Technology differentiation
Null : PowerTrench 3
A : PowerTrench 5
B : PowerTrench 7, PowerTrench 8
Diode Overall
Before 2004
F
F
PF
Fairchild
FRD
Package Type
P: TO-220
PF: TO-22OF
A: TO-3P
AF: TO-3PF
L: TO-264
B: D2-PAK
D: D-PAK
10
Current
Rating
(Per Chip)
04: 4 A
10: 10 A
U
30
Trr
Characteristics
Voltage
Rating(*10)
F: Fast
U: Ultra Fast
X: Extra Fast
60: 600 V
150: 1500 V
DN
Chip Composition
S: Single Chip
DN: Cathode Common Dual Chip
DP: Anode Common Dual Chip
DS: Series Dual Chip
Since 2004
F
F
PF
Fairchild
FRD
Package Type
P: TO-220
PF: TO-22OF
A: TO-3P
AF: TO-3PF
L: TO-264
B: D2-PAK
D: D-PAK
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20
Current
Rating
(The sum of
each current
rating in case
of Dual Chip)
U
P
30
Trr
Characteristics
Life Time
Control
Voltage
Rating(*10)
F: Fast
U: Ultra Fast
X: Extra Fast
S: StealthTM II
None: Electron
Irradiation
P: Pt Diffusion
60: 600 V
150: 1500 V
04: 4 A
10: 10 A
Fairchild Confidential
N
Chip Composition
None: Single Chip
N: Cathode Common
Dual Chip
P: Anode Common
Dual Chip
DS: Series Dual Chip
Other Diodes
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