Transcript 下載/瀏覽Download

Nanoelectronics in RadioFrequency Technology
Peter Russer and Nikolaus Fichtner
學生:吳柏宗
授課老師:陳文山
1
Introduction
Since many nanoelectronic devices exhibit their most interesting
properties at radio frequencies from the microwave up into the optical
frequency range, nanoelectronics is an enormous challenge for the
microwave engineering community.
It requires a growing volume of theoretical, modeling and metrology
foundations, with the aim to help to bridge the gap between the
nanoscience and a new generation of extremely integrated devices,
circuits and systems.
2
Figure 1. Moore’s Law and more illustrating the main development
trends of miniaturization required for various applications in electronics.
(Courtesy ITRS. Used with permission.)
3
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Graphene
Figure 2. Structure of a graphene layer.
Figure 3. Schematic of a dual-gate
graphene field-effect transistor with
a 350 nm gate length and a cutoff
frequency of fT = 50 GHz.
Figure 4. SEM photograph of a 2 mm 3 12
mm graphene FET. The source-drain spacing
is 3 mm and the gate length is 2 mm.
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
4
Carbon Nanotubes
Figure 5. Measured common-source
I-V characteristics of the 2μm × 12μ
m graphene FET .
Figure 6. Structure of a carbon nanotube.
Figure 7. Two-dimensional-graphene sheet
to be rolled up to form a carbon nanotube.
(a) Represents the circumference line of an
armchair carbon nanotube and (b) of a
zigzag carbon nanotube.
C  n  a1  m  a2
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
5
Carbon Nanotube Capacitors for
Energy Storage
Figure 8. CNT a distance h over a
metallic ground plane.
Figure 9. Equivalent circuit model of a
CNT over a metallic ground plane.
6
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Carbon Nanotube Transistors
for Radio Frequency Applications
Figure 10. RF transistor using a parallel
aligned array of single-walled CNTs.
Figure 11. Single-walled CNT transistors and
circuits fabricated on a thin sheet of plastic.
7
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Spintronics
Figure 12. Arrangement of the carbon
nanotube radio. A CNT is mounted
vertically on an electrode and vibrates
due to an external RF field. A second
electrode collects the electrons emitted
from the CNT tip.
Figure 13. A spin-based field-effect transistor.
8
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Single-Electron Devices
Figure 14. (a) Schematic structure of a single-electron
box. (b) Equivalent circuit of a single-electron box .
9
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Memristor Devices
Figure 15. Memristor switch.
10
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Light Transport in Nanowires
Figure 16. Surface plasmon along a metaldielectric interface.
Figure 17. Plasmonic light transport in a silver nanowire.
(a) Injection with focused laser beam at λ = 785 nm.
(b) Microscope picture of the 18.6 μm long nanowire.
(c) SEM picture of the nanowire end.
11
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
The Josephson Effect
Figure 18. Schematic representation
of a Josephson junction.
Figure 19. Josephson junctions: (a) tunnel
junction and (b) narrow bridge.
12
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Figure 20. Frequency conversion with Josephson junctions.
13
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
Quantum Computing with
Josephson Junctions
Figure 21. Josephson charge-Qubit .
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
14
Quantum Cellular Automata
Figure 22. (a) Quantum cellular automata (QCA)
unit cell showing the two possible polarizations.
(b) QCA universal majority gate and the
corresponding truth-table.
Figure 23. Processing steps used to
fabricate organic thinfilm transistors.
參考資料:Digital Object Identifier 10.1109/MMM.2010.936077﹐May 2010﹐IEEE Microwave magazine
15
Conclusion
In this article we have attempted to give an overview of the impact of
nanoelectronics on RF technology.
Today the development of nanoelectronics is highly market driven since the push
for progress requires tremendous investments. The continuous technological
progress in CMOS technology, following Moore’s law and the extensions more
and more than certainly offers large room for progress, however, saturation
already appears on the horizon.
Long-term research and development in direction of novel materials, novel
technologies, and novel device concepts is of great importance to maintain the
competitiveness of electronics industry. Novel devices based on novel materials
and novel technologies will be required to go beyond Moore. Even circuit and
system paradigms will change.
The next 20 years of development of nanoelectronics will be extremely
challenging and will be decisive for the fate of the global players in the field.
Although the reflow of investment can be expected only over a long period of
time a strong engagement in research and development will be mandatory.
在目前科技任何產品都在創新，尋找新的材料、新的方法，把技術用
在可撓曲基板上，基板重量也能減輕了。
16