Transcript Short Course, 2009 Conference on InP and Related Materials, Newport Beach, CA, May 10-14 Scaling of High Frequency III-V Transistors Mark Rodwell University of.

Short Course, 2009 Conference on InP and Related Materials, Newport Beach, CA, May 10-14
Scaling of
High Frequency III-V Transistors
Mark Rodwell
University of California, Santa Barbara
[email protected] 805-893-3244, 805-893-5705 fax
THz Transistors
Transistor bandwidths are increasing rapidly.
Si MOSFETs will soon reach 500+ GHz cutoff frequencies.
It is now clear III-V bipolar transistors can reach ~2-3 THz
cutoff frequencies.
III-V FETs have comparable potential, but the prospects and
analysis are less clear.
The limits to transistor bandwidth are:
contact resistivities
gate dielectric capacitance densities.
device and IC power density & thermal resistance.
challenges in reliably fabricating small devices.
Why
THz Transistors ?
Why Build THz Transistors ?
500 GHz digital logic
→ fiber optics
THz amplifiers→ THz radios
→ imaging, sensing,
communications
precision analog design
at microwave frequencies
→ high-performance receivers
Higher-Resolution
Microwave ADCs, DACs,
DDSs
Performance
Figures of Merit
Transistor figures of Merit / Cutoff Frequencies
gains, dB
H21=short-circuit current gain
MAG = maximum available
power gain:
impedance-matched
fmax
power-gain
cutoff frequency
ft
current-gain
cutoff frequency
U= unilateral power gain:
feedback nulled,
impedance-matched
What Determines Gate Delay ?
Gat e Delay Determinedby :
Deplet on
i capacit ance charging
t hrought helogic swing
 VLOGIC 

Ccb  Cbe ,depletion
 IC 
Deplet on
i capacit ance charging
t hrought hebase resist ance
Rbb Ccbi  Cbe ,depletion
Supplyingbase  collect or
st oredcharge
(t b  t c ) t ypically 10 - 25% of t ot aldelay;
Delaynot wellcorrelat edwit h ft
VLOGIC
I C Ccb  Cbe ,depl  is 55% - 80% of t ot al.
t hrought hebase resist ance
 IC 

Rbb t b  t c 
 VLOGIC 
T helogic swing must be at least
 kT

VLOGIC  4  
 Rex I c 
 q

High I C / Ccb  is a key HBTdesign object ive.
J max,Kirk  2εvelectron(Vce, operating  Vce,full depletion ) / Tc2
 Acollector  TC 



A
2
v
 emitter  electron 
Rex must be verylow for low Vlogic at high J

CcbVLOGIC
VLOGIC

IC
2VCE ,min
HBT Design For Digital & Mixed-Signal Performance
from charge-control analysis:
Tgate  ( VL / I C )( C je  6Ccbx  6Ccbi )  t f
 ( kT / qIC )( 0.5C je  Ccbx  Ccbi  0.5t f I C / VL )
 Rex( 0.5Ccbx  0.5Ccbi  0.5t f I C / VL )
 Rbb( 0.5C je  Ccbi  0.5t f I C / VL ).
analog ICs have similar bandwidth constraints...
High-Frequency
Electron Device
Design
Simple Device Physics: Resistance
bulk resistance
R
 bulk  T
A
contact resistance
-perpendicular
R
 contact
A
contact resistance
- parallel
R
 contact
A
  sheet 
W'
3L
Good approximation for contact
widths less than 2 transfer lengths.
Simple Device Physics: Depletion Layers
capacitance
A
C 
T
transit time
T
t
2v
space-charge
limited current
I max 2v
 2 Vapplied  Vdepletion  2 
A
T
V
C
t
I C
where

T
I max Vapplied  Vdepletion  2
Simple Device Physics: Thermal Resistance
Exact
Carslaw & Jaeger 1959
Long, Narrow Stripe
HBT Emitter, FET Gate
1
1
L
Rth 
ln  
Kth L  W  Kth L
cylindrical heat flow
sphericalheat flow
near junction
far from junction
Square ( L by L )
IC on heat sink
1
L
Rth 
sinh1  
Kth L
W 
1
1  W 

sinh  
KthW
L
Rth 
1
1

4 Kth L Kth L
planar heat flow sphericalheat flow
near surface
far fromsurface
Simple Device Physics: Fringing Capacitance
C
W
    1.5  
L
T
parallel- plate
fringing
wiring capacitance
C/L
VLSI power-delay limits
slowly - varyingfunction
C
 

of
W
/
G
and
W
/
G
L
1
2


 (1 to3)  
FET parasitic capacitances
C parasitic / L ~ 
FET scaling constraints
Electron Plasma Resonance: Not a Dominant Limit
T 1
Lkinetic 
A q 2nm*
T
1
Rbulk 
A q2nm*t m
Cdisplacement 
A
T
dielectricrelaxationfrequency scatteringfrequency plasma frequency
1 Rbulk
1 / 2
1 / 2
f dielecic 
f dielecic 
f plasma 
2 Lkinetic
Cdisplacement Rbulk
LkineticCdisplacement
n - InGaAs
1 

2 

800 THz
7 THz
74 THz
80 THz
12 THz
31 THz
1
2t m
3.5  1019 / cm3
p - InGaAs
7  10 / cm
19
3
Electron Plasma Resonance: Not a Dominant Limit
T 1
Lkinetic 
A q 2nm*
T
1
Rbulk 
A q2nm*t m
Cdisplacement 
A
T
dielectricrelaxationfrequency scatteringfrequency plasma frequency
1 Rbulk
1 / 2
1 / 2
f dielecic 
f dielecic 
f plasma 
2 Lkinetic
Cdisplacement Rbulk
LkineticCdisplacement
n - InGaAs
1 

2 

800 THz
7 THz
74 THz
80 THz
12 THz
31 THz
1
2t m
3.5  1019 / cm3
p - InGaAs
7  10 / cm
19
3
Electron Plasma Resonance: Not a Dominant Limit
T 1
Lkinetic 
A q 2nm*
T
1
Rbulk 
A q2nm*t m
Cdisplacement 
A
T
dielectricrelaxationfrequency scatteringfrequency plasma frequency
1 Rbulk
1 / 2
1 / 2
f dielecic 
f dielecic 
f plasma 
2 Lkinetic
Cdisplacement Rbulk
LkineticCdisplacement
n - InGaAs
1 

2 

800 THz
7 THz
74 THz
80 THz
12 THz
31 THz
1
2t m
3.5  1019 / cm3
p - InGaAs
7  10 / cm
19
3
Electron Plasma Resonance: Not a Dominant Limit
T 1
Lkinetic 
A q 2nm*
T
1
Rbulk 
A q2nm*t m
Cdisplacement 
A
T
dielectricrelaxationfrequency scatteringfrequency plasma frequency
1 Rbulk
1 / 2
1 / 2
f dielecic 
f dielecic 
f plasma 
2 Lkinetic
Cdisplacement Rbulk
LkineticCdisplacement
n - InGaAs
1 

2 

800 THz
7 THz
74 THz
80 THz
12 THz
31 THz
1
2t m
3.5  1019 / cm3
p - InGaAs
7  10 / cm
19
3
Frequency Limits
and Scaling Laws
of (most)
Electron Devices
t  thickness
C  area / thickness
Rtop   contact / area
Rbottom 
 contact
area

PIN photodiode
Rtop
Rbottom
 sheet width
4

length
I max, space-charge-limit  area / thickness
2
power
 length
T 
 log

length
 width 
To double bandwidth,
reduce thicknesses 2:1
Improve contacts 4:1
reduce width 4:1, keep constant length
increase current density 4:1
Bipolar Transistor Scaling Laws
We
Tb
Changes required to double transistor bandwidth:
parameter
collector depletion layer thickness
base thickness
emitter junction width
collector junction width
emitter contact resistance
current density
base contact resistivity
Wbc
Tc
emitterlength LE 
change
decrease 2:1
decrease
1.414:1
decrease 4:1
decrease 4:1
decrease 4:1
increase 4:1
decrease 4:1
Linewidths scale as the inverse square of bandwidth because thermal constraints dominate.
FET Scaling Laws
LG
gate width WG 
Changes required to double transistor bandwidth:
parameter
gate length
gate dielectric capacitance density
gate dielectric equivalent thickness
channel electron density
source & drain contact resistance
current density (mA/mm)
change
decrease 2:1
increase 2:1
decrease 2:1
increase 2:1
decrease 4:1
increase 2:1
Linewidths scale as the inverse of bandwidth because fringing capacitance does not scale.
THz & nm Transistors: it's all about the interfaces
Metal-semiconductor interfaces (Ohmic contacts):
very low resistivity
Dielectric-semiconductor interfaces (Gate dielectrics):
very high capacitance density
Transistor & IC thermal resistivity.
Bipolar
Transistors
Indium Phosphide Heterojunction Bipolar Transistors
Z. Griffith
E. Lind
Bipolar Transistor Operation
Vbe
Vce
Ic
Because emit t erenergy dist ribut ion is t hermal(exponental)
i
I c  exp(qVbe / kT )
Almostall elect ronsreachingbase pass t hroughit
 I c varieslit t lewit h collect orvolt age
Transistor Hybrid-Pi equivalent circuit model
Rbe   / gm
gm  qIE / nkT
Cbe  C je  gm (t b  t c )
Cutoff frequencies in HBTs
 kT

1
kT
 t base  t collector  C je
 Cbc 
 Rex  Rcoll 
2ft
qIE
 qIE

t base  Tb2 2Dn
f max 
ft
8RbbCcbi
t collector  Tc 2veff
Epitaxial Layer
Structure
Epitaxy: InP Emitter, InGaAs Base, InP Collector, Both Junctions Graded
M. Dahlstrom
Z. Griffith UCSB
Key Features:
M. Urteaga
TSC
N++ InGaAs emitter contact layer
emitter
InP emitter
graded
base
InGaAs/InAlAs superlattice e/b grade
collector
subcollector
emitter
cap
InGaAs graded base
bandgap or doping grade
BC setback layer
Layer
Material
Doping
Thickness (nm)
Emitter cap
In0.53Ga0.47As
8  1019 cm-3: Si
25
N emitter
InP
8  10 cm : Si
50
N- emitter
InP
1  1018 cm-3: Si
20
In0.53Ga0.47As / In0.52Al0.48As,
1.6 nm period
In0.53Ga0.47As / In0.52Al0.48As,
1.5 nm period
N: 1  1017 cm-3: Si
24
P: 8  1017 cm-3: C
1
Base
In0.53Ga0.47As
P: 7-4  1019 cm-3: C
24.5
Setback
In0.53Ga0.47As
N: 9  1016 cm-3: Si
4.5
Base-collector
grade
In0.53Ga0.47As / In0.52Al0.48As,
1.6 nm period
N: 9  1016 cm-3: Si
15
Pulse doping
InP
6  1018 cm-3: Si
3
Collector
InP
N: 2 1016 cm-3: Si
82
etch-stop
In0.53Ga0.47As
19
N: 8 10 cm : Si
5
Subcollector
InP
N: 8 1019 cm-3: Si
~200
+
InGaAs/InAlAs superlattice b/c grade
Emitter-base grade
InP collector
InGaAs etch-stop layer
thin for heat conduction
InP subcollector
Emitter-base grade
19
-3
-3
M. Dahlstrom
Z. Griffith
E. Lind
Epitaxy with Abrupt BE Junction
Similar design
emitter
Abrupt E/B junction (no e/b grade)
graded
base
Advantages:
ease of stopping emitter etch on base
→ good base contacts
Disadvantages:
Increased Vbe .
Cannot make e/b ledge.
collector
subcollector
emitter
cap
Layer
Material
Doping
Thickness (nm)
Emitter cap
In0.53Ga0.47As
8  1019 cm-3: Si
25
InP
8  10 cm : Si
50
N emitter
InP
1  10 cm : Si
20
N- emitter
InP
N: 1  1017 cm-3: Si
24
Emitter-base grade
In0.53Ga0.47As / In0.52Al0.48As,
1.5 nm period
P: 8  1017 cm : C
1
Base
In0.53Ga0.47As
P: 7-4  1019 cm-3: C
24.5
Setback
In0.53Ga0.47As
N: 9  10 cm : Si
4.5
Base-collector
grade
In0.53Ga0.47As / In0.52Al0.48As,
1.6 nm period
N: 9  1016 cm-3: Si
15
Pulse doping
InP
6  1018 cm : Si
3
Collector
InP
N: 2 1016 cm-3: Si
82
In0.53Ga0.47As
19
-3
N: 8 10 cm : Si
5
InP
19
-3
~200
+
N emitter
-
etch-stop
Subcollector
19
18
-3
-3
-3
-3
16
-3
N: 8 10 cm : Si
Alternative Grades for Thinner Epitaxy
Common Grade in Literature
InGaAs/InAlAs
18 nm thick, 1.5 nm period
Sub-monolayer Grade
0.15 nm InAlAs,
(0.15 to 0.165 nm InGaAs)
10.8 nm thick
Strained InxGa1-xAs Grade
InGaAs/GaAs 6 nm
E . Lind
Z. Griffith
Other Methods of Grading the Junctions
InGaAs/InGaAsP/InP grade
InP/GaAsSb/InP DHBT
IEDM 2001
-suitable for MOCVD growth
- does not need B/C grading
- excellent results
- E/B band alignment through
GaAsSb alloy ratio (strain)
or InAlAs emitter
Transport Analysis
Approximate Carrier Transit Times
We
Tb
Wbc
Tc
Base Transit Time
t b  Tb2 2Dn  Tb vexit
Collector Transit Time
t c  Tc 2v sat
emitterlength LE 
Base Transit Time with Graded Base
Dino Mensa
Assumes :
DN  40 cm2 / V  sec
vexit  3  107 cm/s
Drift - diffusion modelcorrectif
τ b  t m  Dn m* / kT  35 fs

t b  Wb Lg / Dn  L / Dn  Lg / vsat 1  e
2
g
where Lg is thegrading length:
Lg  Wb kT / Eg 
Wb / Lg

Base Transit Time: Grading Approaches
Compositional grading:
strained graded InGaAs base
52 meV potentialdrop :
In0.455Ga 0.545As  In0.53Ga 0.47As (strained)
Doping grading
unstrained In0.53Ga0.47As base
Carbon doping variedfrom:
~ 8  1019 /cm3 to ~ 5  1019 /cm3
Dino Mensa
Miguel Urteaga
Mattias Dahlström
T. Ishibashi
Collector Transit Time
From elementaryelectrostatics (refer t osketch)
tc 
(1  x / Tc )
Tc
dx

0 v( x)
2veff
TC
t c is moresensitiveto velocitynear base.
Fortuitous, as initialvelocityis high,
thendecreases due to  - L scattering.
From best fit toRF data,or from Kirk current density vs. collectorvoltage:
InP:  3.5 107 cm/s for ~ 70 - 200 nm layers
Space-Charge Limited Current Density → Ccb charging time
Collector Depletion Layer Collapse
Vcb,min    (qNd )(Tc2 / 2 )
Collector Field Collapse (Kirk Effect)
Vcb    ( J / vsat  qNd )(Tc2 / 2 )
 J max  2veff (Vcb  Vcb,min  2 ) / Tc2
NotethatVbe   , hence(Vcb   )  Vce
Ccb VLOGIC / I C  Acollector Tc VLOGIC
 Acollector
VLOGIC

IC  
VCE  VCE ,min   Aemitter
 TC


 2veff




Collector capacitance charging time scales linearly with collector thickness if J = Jmax
Space-Charge-Limited Current (Kirk effect) in DHBTs
500
0.6 V
cb
0.0 V
 2vsat (Vce  Vce,min ) / Tc2
cb
-0.2 V
300
cb
f , -0.3 V
t
200
J max  2vsat (Vcb  Vcb,min  2 ) / Tc2
0.2 V
cb
t
Kirk - effect thresholdincreases
with increasedVce
400
f (GHz)
Decreasein ft and f max at high J
100
0
2
cb
4
6
8
2
J (mA/um )
10
12
e
I
b step
= 180 uA
40
35
12
30
10
25
Peak f , f
8
t
max
20
6
15
4
10
2
5
0
0
0
0.5
1
1.5
V
ce
(V)
2
2.5
c
where t heeffect ivecollect or
currentflux area is
Aeffective  LE WE  2TC 
cb
I (mA)
dVce
T
 Rspacecharge 
dIc
2vsat Aeffective
V =0V
2
2
c
2
14
Je (mA/mm )
Increasein Vce, sat wit h increasedJ
A = 0.6 x 4.3 mm
jbe
16
T. Ishibashi
Current-induced Collector Velocity Overshoot
2.5
1.5
ec
tau , ps
2
J=0
300 Å InGaAs base
1
2000 Å InP collector
0.5
280 GHz peak ft
0
0
0.5
1
1.5
2
2.5
2
inverse current density, 1/J,mm /mA
3
3.5
Increasedcurrent reduces  - L scat t ering,
increasesv ( x ) in early part of collect or
 reduced collect ort ransit tme
i
(1  x / Tc )
dx is not exact lyproport ion
al to I c
v( x)
0
TC
Qbase  I c  
J= 8 mA/um2
correctdefinitionof collect ort ransit tme
i is
Q
Q
t c  base nott c  base
I c
Ic
Nakajima, H. "A generalized expression for collector transit time of HBTs
taking account of electron velocity modulation," Japanese Journal of
Applied Physics, vo. 36, Feb. 1997, pp. 667-668
CAUTION : observed nonlineart ec variation is also in part due to modulation in emitter ideality factor wit h bias current (1/g m often does not vary as Rex  nkT / qI E ), and due to variation of C je with bias.
Transit time Modulation Causes Ccb Modulation
Qbase  constant Qbase
Tc
electrons
Ccb  
Qbase holes
Vcb
tf 
t
Qbase holes
Ccb

 f
I c
I c
Vcb
I b , ΔQb a se
Camnitz and Moll, Betser & Ritter, D. Root
h o les
500
CollectorVelocity Modulation:
t f Vcb  0  Ccb I c  0
1
400
400
- strongeffect in InGaAsSHBTs
- weak effect in InP DHBTs
0
2
4
6
8
2
J (mA/um )
10
e
12
0
-1
-2
0
7
100
200
nm
300
400
6
e
Increasein τ c with Vcb  reduced Ccb
1
cb
-0.2 V
5
cb
300
t
8
C /A (fF/mm2)
200
nm
2
cb
f , -0.3 V
-2
100
cb
-0.2 V
300
100
-1
0.2 V
cb
200
0
0
0.0 V
t
L

eV
cb
f (GHz)
2
Kirk Effect :
t f Vcb  0  Ccb I c  0
0.6 V
eV
holes
 0 qn( x ) A1  x / Tc dx  Vbc A / Tc  f ( I c ,Vcb )
4
0.0 V
Increasein Ccb is due to both
0.2 V
3
V = 0.6 V
cb
2
0
2.5
5
7.5
J (mA/mm2)
e
10
12.5
- base pushoutinto collector
- and modulationof τb by Vcb
Emitter-Base Junction Effects
Space-charge storage
Voltage drops in
depletion region
Electron degeneracy
contributes 1  - μm2
equivalent series resistance
2
10
1
J(mA/um^2)
10
Rodwell
Lundstrom.
0
10
10
-1
10
-2
10
-3
Fermi-Dirac
Boltzmann
-0.3
E fn ( x )
x

J
qmn n( x )
need thin layer &
high electron
density
-0.2
-0.1
V -
0
0.1
0.2
be
Highly degeneratelimit
J
need thin layer to avoid
substantial charge storage
delays
Equivalent series
resistance approximation
qm * ( E f  Ec )2
2 23

mA  E  Ec 
 130 2  f

mm  0.1 eV 

for InP emitter(m*/m0  0.08).
2
RC parasitics
Simple Device Physics: Resistance
bulk resistance
R
 bulk  T
A
contact resistance
-perpendicular
R
 contact
A
contact resistance
- parallel
R
 contact
A
  sheet 
W'
3L
Good approximation for contact
widths less than 2 transfer lengths.
HBT RC Parasitics
base contact width
< 2 transfer lengths
→ simple analysis
Limiting case of
Pulfrey / Vaidyanathan
fmax model.
HBT RC Parasitics
Rex  contact,emitter / Aemitter
emitterlength LE 
Rspread  sWe / 12LE
Rgap  sWgap / 4LE
Rspread ,contact  sWbc / 6LE
Rcontact  contact,baseWbc / Abase _ contacts
Ccb,e  Aemitter / Tc
Ccb,gap  Agap / Tc
Ccb,contact  Abase _ contacts / Tc
Base-Collector Time Constant & Fmax.
f max 
ft
8RbbCcbi
where
t cb  RbbCcbi  Ccb,contact Rcontact
 Ccb, gap ( Rcontact  Rspread ,contact  Rgap / 2)
 Ccb,e ( Rcontact  Rspread ,contact  Rgap  Rspread )
Relationship to Equivalent Circuit Model
Ccbx  Ccbi  Ccb,e  Ccb,gap  Ccb,contact
Rbb  Rspread  Rgap  Rcontact,spread  Rcontact
RbbCcbi  Ccb,contact Rcontact  Ccb, gap ( Rcontact  Rspread ,contact  Rgap / 2)
 Ccb,e ( Rcontact  Rspread ,contact  Rgap  Rspread )
Device Design
Device Scaling
Simple Device Physics: Thermal Resistance
Exact
Carslaw & Jaeger 1959
Long, Narrow Stripe
HBT Emitter, FET Gate
1
1
L
Rth 
ln  
Kth L  W  Kth L
cylindrical heat flow
sphericalheat flow
near junction
far from junction
Square ( L by L )
IC on heat sink
1
L
Rth 
sinh1  
Kth L
W 
1
1  W 

sinh  
KthW
L
Rth 
1
1

4 Kth L Kth L
planar heat flow sphericalheat flow
near surface
far fromsurface
Bipolar Transistor Design
We
Tb
t b  T 2Dn
2
b
Wbc
Tc
t c  Tc 2v sat
Ccb  Ac /Tc
I c,max  vsat Ae (Vce,operating  Vce,punch-through ) / T
2
c
P
T 
LE

 Le 
1  ln 
 We 

Rex  contact/Ae
 We Wbc   contact
 
Rbb  sheet 

 12Le 6 Le  Acontacts
emitterlength LE 
Bipolar Transistor Design: Scaling
We
Tb
t b  T 2Dn
2
b
Wbc
Tc
t c  Tc 2v sat
Ccb  Ac /Tc
I c,max  vsat Ae (Vce,operating  Vce,punch-through ) / T
2
c
P
T 
LE

 Le 
1  ln 
 We 

Rex  contact/Ae
 We Wbc   contact
 
Rbb  sheet 

 12Le 6 Le  Acontacts
emitterlength LE 
Bipolar Transistor Scaling Laws
We
Tb
Changes required to double transistor bandwidth:
parameter
collector depletion layer thickness
base thickness
emitter junction width
collector junction width
emitter contact resistance
current density
base contact resistivity
Wbc
Tc
emitterlength LE 
change
decrease 2:1
decrease
1.414:1
decrease 4:1
decrease 4:1
decrease 4:1
increase 4:1
decrease 4:1
Linewidths scale as the inverse square of bandwidth because thermal constraints dominate.
Thermal Resistance Scaling : Transistor, Substrate, Package
sphericalflow
for r  Le
cylindrical heat flow
near junction
Tsubstrate 
Tpackage
L 
P
ln e  
K InP LE  We  K InP
P
planarflow
for r  DHBT / 2
 1 1
P  Tsub  D / 2 

  


2
D

 LE D  K InP 
increases
insignificant
logarithmically
variation
increasesquadratically
if Tsub is constant
 1 1  Pchip
  
 4   KCuWchip
junction temperature rise, Kelvin
140 Tsub  40 mm  (150GHz/ f clock )
120
W iringlenghts
total
2000- HBT CML IC
scale as
100
80
1/bandwidth.
substrate: cylindrical+spherical regions
60
scales as
substrate: planar region
20
0
100
P ower densit y,
package
40
(bandwidt h) 2 .
200
300
400
500
600
master-slave D-Flip-Flop clock frequency, GHz
700
Thermal Resistance Scaling : Transistor, Substrate, Package
sphericalflow
for r  Le
cylindrical heat flow
near junction
Tsubstrate 
Tpackage
L 
P
ln e  
K InP LE  We  K InP
P
planarflow
for r  DHBT / 2
 1 1
P  Tsub  D / 2 

  


2
D

 LE D  K InP 
increases
insignificant
logarithmically
variation
increasesquadratically
if Tsub is constant
 1 1  Pchip
  
 4   KCuWchip
junction temperature rise, Kelvin
140 Tsub  40 mm  (150GHz/ f clock )
120
W iringlenghts
2000- HBT CML IC
Probable
best solution:
scale as
1/bandwidth.
Thermal Vias ~500 nm below InP subcollector
P ower densit y,
...over full active IC area.
scales as
total
100
80
substrate: cylindrical+spherical regions
60
package
40
substrate: planar region
20
0
100
(bandwidt h) 2 .
200
300
400
500
600
master-slave D-Flip-Flop clock frequency, GHz
700
InP Bipolar Transistor Scaling Roadmap
industry university university appears
→industry 2007-8
feasible
maybe
emitter 512
16
256
8
128
4
64
2
32 nm width
1 mm2 access 
base
300
20
175
10
120
5
60
2.5
30 nm contact width,
1.25 mm2 contact 
collector 150
4.5
4.9
106
9
4
75
18
3.3
53
36
2.75
37.5 nm thick,
72 mA/mm2 current density
2-2.5 V, breakdown
520
850
430
240
730
1300
660
330
1000
2000
1000
480
1400 GHz
2800 GHz
1400 GHz
660 GHz
ft
fmax
power amplifiers
digital 2:1 divider
370
490
245
150
We
Tb
Wbc
Tc
Can we make a 1 THz SiGe Bipolar Transistor ?
InP
emitter 64
2
SiGe
18
1.2
nm width
mm2 access 
56
1.4
nm contact width,
mm2 contact 
collector 53
36
2.75
15
125
???
nm thick
mA/mm2
V, breakdown
ft
fmax
1000
2000
GHz
GHz
Simple physics clearly drives scaling
transit times, Ccb/Ic
→ thinner layers, higher current density
high power density → narrow junctions
base
small junctions→ low resistance contacts
Key challenge: Breakdown
15 nm collector → very low breakdown
(also need better Ohmic contacts)
64
2.5
1000
2000
PAs
1000 1000
GHz
digital 480
480
GHz
(2:1 static divider metric)
Assumes collector junction 3:1 wider than emitter.
Assumes SiGe contacts 2:1 wider than junctions
HBT Design For Digital & Mixed-Signal Performance
from charge-control analysis:
Tgate  ( VL / I C )( C je  6Ccbx  6Ccbi )  t f
 ( kT / qIC )( 0.5C je  Ccbx  Ccbi  0.5t f I C / VL )
 Rex( 0.5Ccbx  0.5Ccbi  0.5t f I C / VL )
 Rbb( 0.5C je  Ccbi  0.5t f I C / VL ).
InP HBT: Status
InP DHBTs: September 2008
400 500
GHz GHz
1000
600
GHz
900
GHz
800
GHz
700
GHz

ft or f max alone
Teledyne DBHT ( ft  f max ) / 2
125 nm
UIUC DHBT
800
NTT DBHT
max
(GHz)
250 nm
f
popul a rmetri cs:
ft f max
ft f max
(1 ft  1 f max ) 1
ETHZ DHBT
600
UIUC SHBT
250 nm
UCSB DHBT
400
NGST DHBT
600nm
HRL DHBT
IBM SiGe
200
350 nm
Vitesse DHBT
much better metri cs:
power amplifiers:
P AE,associat edgain,
mW /mm
low noise amplifiers:
Fmin , associat edgain,
digit al :
f clock , hence
(Ccb V / I c ),
Updated Sept. 2008
0
0
200
400
600
ft (GHz)
800
1000
( Rex I c / V ),
( Rbb I c / V ),
(τb  τc )
512 nm InP DHBT
500 nm mesa HBT
150 GHz M/S latches
175 GHz amplifiers
Laboratory
Technology
UCSB / Teledyne / GCS
UCSB
500 nm sidewall HBT
DDS IC: 4500 HBTs
20-40 GHz op-amps
Teledyne
Teledyne / BAE
Teledyne / UCSB
Production
( Teledyne )
Z. Griffith
M. Urteaga
P. Rowell
D. Pierson
B. Brar
V. Paidi
ft = 405 GHz
fmax = 392 GHz
Vbr, ceo = 4 V
20 GHz clock
53-56 dBm OIP3 @ 2 GHz
with 1 W dissipation
40
H
mA/mm2
10
30
dB
256 nm Generation
InP DHBT
150 nm thick collector
U
21
20
f
10
max
= 780 GHz
10
10
10
11
3
4
5
12
11
10
20
2
= 560 GHz
15
10
5
ft = 560 GHz
324 GHz
Amplifier
2
21
mA/mm
dB
10
max
1
V
U
f
0
12
10
ce
10
10
10
9
10
H
20
4
0
Hz
70 nm thick collector
30
6
2
f = 424 GHz
0 t
9
10
8
0
0
9
10
10
10
11
10
0
12
10
1
2
V
Hz
3
4
ce
60 nm thick collector
40
H
2
U
mA/mm
dB
200 GHz
master-slave
latch design
30
30
21
20
10 fmax = 218 GHz
20
10
f = 660 GHz
Z. Griffith, E. Lind
J. Hacker, M. Jones
t
0
9
10
10
10
11
10
Hz
10
12
0
0
1
2
V
ce
3
324 GHz Medium Power Amplifiers in 256 nm HBT
ICs designed by Jon Hacker / Teledyne
Teledyne 256 nm process flow-
Hacker et al, 2008 IEEE MTT-S
Gain (dB), Power (dBm), PAE (%)
20
10
40
Output Power (dBm)
Gain (dB)
Drain Current (mA)
PAE (%)
30
0
20
-10
10
-20
-20
0
-15
-10
-5
Input Power (dBm)
0
5
Current, mA
~2 mW saturated output power
128 / 64 / 32 nm
HBT Technologies
Conventional ex-situ contacts are a mess
THz transistor bandwidths: very low-resistivity contacts are required
textbook contact
with surface oxide
with metal penetration
Interface barrier → resistance
Further intermixing during high-current operation → degradation
Improvements in Ohmic Contacts
128 nm generation requires ~ 4  - μm2 emitter & base resistivities
A.. Crook
V. Jain
A. Barakshar
M. Wistey
U. Singisetti
S. Bank
64 nm generation requires ~ 2  - μm2
Contacts to N-InGaAs*:
Mo
MBE in-situ
2.2 (+/- 0.5)  - μm2
TiW
ex-situ / NH4 pre-clean
~2.2  - μm2
variable between process runs
Contacts to P-InGaAs:
Mo
MBE in-situ
below 2.5  - μm2
Pd/Ti...
ex-situ
~4  - μm2
...far better contacts coming...
*measured emitter resistance remains higher than that of contacts.
Mo Emitter Contacts: Robust Integration into Process Flow
Proposed Process Integration:
M. Wistey
A. Barakshar
U. Singisettti
V. Jain
Process Must Change Greatly for 128 / 64 / 32 nm Nodes
control undercut
→ thinner emitter
thinner emitter
→ thinner base metal
Undercutting of emitter ends
{101}A planes: fast
{111}A planes: slow
thinner base metal
→ excess base metal resistance
E. Lind
128 nm Emitter Process: Dry Etched Metal & Semiconductor
a
b
Litho
Cr
pattern
metal
c
SF6/Ar ICP
SiNsidewall
x sidewall
d
e
dry/N
etch
Cl
2 2 ICP
Wetetch
Etch
wet
HCl:H3PO4
BHF
SiO2
TiW
Ti
InGaAs n++
InP n
InP n
InP n
InGaAs p++ Base
InGaAs p++ Base
InGaAs p++ Base
InGaAs p++ Base
20
H
21
10
max
mA/mm
f
2
U
20
dB
10
10
10
9
10
30
InGaAs p++ Base
12
InP n
11
InGaAs n++
10
InGaAs n++
= 560 GHz
10
5
ft = 560 GHz
0
9
10
15
0
10
10
11
10
Hz
results @ c.a. 200 nm emitter metal width
12
10
0
1
2
V
ce
3
4
Planarization E/B Processes for 64 & 32 nm
Planarization boundary
E; Lobisser
V. Jain
G. Burek
III-V FET Scaling
Simple FET Scaling
Goal double transistor bandwidth when used in any circuit
→ reduce 2:1 all capacitances and all transport delays
→ keep constant all resistances, voltages, currents
All lengths, widths,
thicknesses reduced 2:1
S/D contact resistivity reduced 4:1
Cgd / Wg ~ 
gm / Wg ~ v / Tox
Cgs / Wg ~   Lg / Tox
Cgs, f / Wg ~ 
Csb / Wg ~   Lc / Tsub
If Tox cannot scale with gate length,
Cparasitic / Cgs increases,
gm / Wg does not increase
hence Cparasitic /gm does not scale
FET scaling: Output Conductance & DIBL
( Cgs expressionneglectsD.O.S. effects)
Cgs ~ Wg Lg / Tox
Id  Q /t
Cd ch ~ Wg
where Q  CgsVgs  Cd chVds
transconductance
output conductance
→ Keep Lg / Tox constant as we scale Lg
FET Scaling Laws
LG
gate width WG 
Changes required to double transistor bandwidth:
parameter
gate length
gate dielectric capacitance density
gate dielectric equivalent thickness
channel electron density
source & drain contact resistance
current density (mA/mm)
change
decrease 2:1
increase 2:1
decrease 2:1
increase 2:1
decrease 4:1
increase 2:1
III-V MOSFETs for VLSI
What is it ?
MOSFET with an InGaAs channel
Why do it ?
low electron effective mass→ higher electron velocity
more current, less charge at a given insulator thickness & gate length
very low access resistance
What are the problems ?
low electron effective mass→ constraints on scaling !
must grow high-K on InGaAs, must grow InGaAs on Si
Our focus today is III-V FET scaling generally
Low Effective Mass Impairs Vertical Scaling
Shallow electron distribution needed
for high gm / Gds ratio.
2
.
Energy of Lth well state  L2 / m*Twell
For thin wells,
only 1st state can be populated.
For very thin wells,
1st state approaches L-valley.
Only one vertical state in well.
Minimum ~ 5 nm well thickness.
→ constrains gate length scaling.
Density-Of-States Capacitance
E f  Ewell  ns /(nm* / 2 )
(bidirectional motion)
V f  Vwell  s / cdos
where cdos  q2nm* / 2
and n is the # of band minima
Two implications:
- With Ns >1013/cm2, electrons populate satellite valleys
Fischetti et al, IEDM2007
- Transconductance limited by finite state density
Solomon & Laux , IEDM2001
Drive Current in the Ballistic & Degenerate Limits
 mA   Vgs  Vth 

  
J  K   84
 mm   1 V 
0.25
3/ 2
, where K 
0.7 nm, n=6
K

1/ 2
*
dos ,o / cox )  n  ( m / mo )

3/ 2
0.4 nm, n=6
Error bars on Si data
points correct for
(Ef-Ec)>> kT
approximation
0.2
0.15
1  (c

n  m* mo
n = # band minima
cdos,o = density of
states capacitance for
m*=mo & n=1
0.8 nm, n=1
0.1
1.0 nm, n=1
0.05
EOT includes wavefunction depth (0.5 nm for 3.5 nm InGaAs well)
0
0.01
0.1
m*/m
1
o
HEMT Scaling Challenge: Low Gate Barrier
Gate barrier is low: ~0.6 eV
Source
Gate
Drain
K Shinohara
Tunneling through barrier
→ sets minimum thickness
Emission over barrier
→ limits 2D carrier density
Ec
EF
Ec
EF
Ewell-
Ewell-
At Ns  1013 / cm2 , (E f  Ec ) ~ 0.6 eV
HEMT Scaling Challenge: High Access Resistance
Gate barrier also lies under source / drain contacts
Source
Gate
Drain
N+ layer
widegap barrier layer
K Shinohara
low leakage:
need high barrier under gate
low resistance:
need low barrier under contacts
Ec
EF
Ec
EF
Ewell-
N+ cap
layer
Ewell-
THz III-V FET Scaling: What Must Be Done
FET Scaling Laws
LG
As gate length is reduced...
channel thickness
should be reduced...
barrier thickness
should be reduced...
gate width WG 
Changes required to double transistor bandwidth:
parameter
gate length
gate dielectric capacitance density
gate dielectric equivalent thickness
channel electron density
source & drain contact resistance
current density (mA/mm)
change
decrease 2:1
increase 2:1
decrease 2:1
increase 2:1
decrease 4:1
increase 2:1
target gm/Wg and Id/Wg
should be increased...
source and drain access resistivity should be reduced...
We face serious difficulties in doing these.
A MOSFET Might Scale Better than a HEMT
sidewall
gate dielectric
metal gate
source contact
N+ source
drain contact
quantum well / channel
N+ drain
barrier
substrate
no gate barrier
under S/D contacts
high-K gate
barrier
Overlap between gate
and N+ source/drain
Interconnects
Coplanar Waveguide
No ground vias
No need (???) to thin
substrate
Hard to ground IC
to package
+V
+V
+V
0V
Parasitic microstrip mode
ground plane breaks → loss of ground integrity
-V
0V
substrate mode coupling
or substrate losses
kz
III-V:
semi-insulating substrate→
substrate mode coupling
Silicon
conducting substrate
→ substrate conductivity
losses
+V
0V
Parasitic slot mode
Repairing ground plane with ground straps is effective only in simple ICs
In more complex CPW ICs, ground plane rapidly vanishes
→ common-lead inductance → strong circuit-circuit coupling
poor ground integrity
loss of impedance control
ground bounce
coupling, EMI, oscillation
40 Gb/s differential TWA modulator driver
note CPW lines, fragmented ground plane
35 GHz master-slave latch in CPW
note fragmented ground plane
175 GHz tuned amplifier in CPW
note fragmented ground plane
Classic Substrate Microstrip
W
Zero ground
inductance
in package
Thick Substrate
→ low skin loss
 skin 
H
1

1/ 2
r
Brass carrier and
assembly ground
IC with backside
ground plane & vias
interconnect
substrate
No ground plane
breaks in IC
H
High via
inductance
12 pH for 100 mm substrate -- 7.5  @ 100 GHz
lines must be
widely spaced
Line spacings must be ~3*(substrate thickness)
near-zero
ground-ground
inductance
TM substrate
mode coupling
kz
Strong coupling when substrate approaches ~ld / 4 thickness
ground vias must be
widely spaced
all factors require very thin substrates for >100 GHz ICs
→ lapping to ~50 mm substrate thickness typical for 100+ GHz
IC vias
eliminate
on-wafer
ground
loops
III-V MIMIC Interconnects -- Thin-Film Microstrip
narrow line spacing → IC density
no substrate radiation, no substrate losses
fewer breaks in ground plane than CPW
... but ground breaks at device placements
InP mm-wave PA (Rockwell)
still have problem with package grounding
...need to flip-chip bond
thin dielectrics → narrow lines
→ high line losses
→ low current capability
→ no high-Zo lines
W
Zo ~
o  H 


 r1/ 2  W  H 
H
III-V MIMIC Interconnects -- Inverted Thin-Film Microstrip
narrow line spacing → IC density
Some substrate radiation / substrate losses
No breaks in ground plane
... no ground breaks at device placements
still have problem with package grounding
InP 150 GHz master-slave latch
...need to flip-chip bond
thin dielectrics → narrow lines
→ high line losses
→ low current capability
→ no high-Zo lines
InP 8 GHz clock rate delta-sigma ADC
No clean ground return ? → interconnects can't be modeled !
35 GHz static divider
interconnects have no clear local ground return
interconnect inductance is non-local
interconnect inductance has no compact model
8 GHz clock-rate delta-sigma ADC
thin-film microstrip wiring
every interconnect can be modeled as microstrip
some interconnects are terminated in their Zo
some interconnects are not terminated
...but ALL are precisely modeled
InP 8 GHz clock rate delta-sigma ADC
VLSI Interconnects with Ground Integrity & Controlled Zo
narrow line spacing → IC density
no substrate radiation, no substrate losses
negligible breaks in ground plane
negligible ground breaks @ device placements
still have problem with package grounding
...need to flip-chip bond
thin dielectrics → narrow lines
→ high line losses
→ low current capability
→ no high-Zo lines
Conclusions
Few-THz Transistors
Few-THz InP Bipolar Transistors: can it be done ?
Scaling limits: contact resistivities, device and IC thermal resistances.
62 nm (1 THz ft, 1.5 THz fmax ) scaling generation is feasible.
700 GHz amplifiers, 450 GHz digital logic
Is the 32 nm (1 THz amplifiers) generation feasible ?
Few-THz InP Field-Effect Transistors: can it be done?
challenges are gate barrier, vertical scaling,
source/drain access resistance, increased gm and drive current.
2DEG carrier concentrations must increase.
S/D regrowth offers a path to lower access resistance.
Solutions needed for gate barrier: maybe even MOSFET ?
What Would We Do With Them500?GHz digital logic
→ fiber optics
THz amplifiers→ THz radios
→ imaging, sensing,
communications
precision analog design
at microwave frequencies
→ high-performance receivers
Higher-Resolution
Microwave ADCs, DACs,
DDSs