Silicon pad detectors for LCCAL: characterisation and first results Antonio Bulgheroni University of Milan – Italy on behalf of LCCAL: Official INFN R&D project, official.
Download ReportTranscript Silicon pad detectors for LCCAL: characterisation and first results Antonio Bulgheroni University of Milan – Italy on behalf of LCCAL: Official INFN R&D project, official.
Silicon pad detectors for LCCAL: characterisation and first results Antonio Bulgheroni University of Milan – Italy on behalf of LCCAL: Official INFN R&D project, official DESY R&D project PRC R&D 00/02 Contributors (Como, LNF, Padova, Trieste): M. Alemi, M.Bettini, S. Bertolucci, E. Borsato, M. Caccia, P.Checchia, C. Fanin, G. Fedel, J. Marczewski, S. Miscetti , M. Nicoletto, M. Prest, R. Peghin, L. Ramina, E. Vallazza. ECFA – DESY Amsterdam, 1st – 4th April ‘03 Calorimeter Layout Total of 50 layers 27 X0 Absorber 25 x 25 x 0.3 cm3 Scintillator 25 Cells 5 x 5 cm2 Silicon pad detectors 3 layers 725 Pads ~ 1 x 1 cm2 2, 6 and 12 X0 Main characteristics: – Sensor thickness: 300mm – Resistivity: 4-6k – AC coupling ~0.9 cm 6 cm 7 cm ECFA – DESY Amsterdam, 1st – 4th April ‘03 Sensor details ~0.9 cm • Silicon dioxide thickness: 265 nm – Bias grid and guard ring • 3M bias resistors • Symmetric structure Bias pad Guard ring pad ECFA – DESY Amsterdam, 1st – 4th April ‘03 Hybridisation details Hybridisation through conductive glue Analogue Readout Chip: VA-HDR9c (IdeAs) – VA Viking family – HDR High dynamic range – 9c Four selectable gains Gain* [mv/fC] Dynamic Range [mip] 3.3 2.5 1.7 1.2 ± 100 ± 140 ± 200 ± 300 *Measured value ECFA – DESY Amsterdam, 1st – 4th April ‘03 Motherboard design 6 sensors per motherboard with serial readout. Status of production: – 16 sensors available – 2 motherboards fully and 1 partially equipped Signal routing through Erni connectors ECFA – DESY Amsterdam, 1st – 4th April ‘03 Test beam: preliminary results* Two electrons with energy 750 MeV X silicon chambers Y silicon chambers Cluster recognition First layer Second layer Third layer *Plots filled only with pads with SNR>10s ECFA – DESY Amsterdam, 1st – 4th April ‘03 How we get there: details of the sensor characterisation 2 technological runs First batch of 11 sensors (spring ’02) Second batch of 9 sensors (summer ’02) Next batch available in summer ‘03 ECFA – DESY Amsterdam, 1st – 4th April ‘03 Measurement setup KI 590 & 595 HF & QS CV meters SCS 4200 With 2 SMU ECFA – DESY Amsterdam, 1st – 4th April ‘03 I – V Measurement: the method Guard ring A SMU2 SMU1 Total A Total and bias current measured directly by an SMU Guard ring current calculated from the others two ECFA – DESY Amsterdam, 1st – 4th April ‘03 I – V measurements: the results High guard-ring current (> 50mA) Dicing edge too close to the guard ring structure, but it works and the sensor performances are NOT spoiled! Cutting edge Guard ring p+ Depletion region n n+ metal Solution: keep the cutting edge far away from the guard ring! ECFA – DESY Amsterdam, 1st – 4th April ‘03 Soft breakdown Bias current reasonable (few mA) Strange shape with a “soft” breakdown n+ or metal shallow impurities on the backplane Depletion region n n+ Metal Impurities Solution: replace the implanted backside contact with a diffused one, but … ECFA – DESY Amsterdam, 1st – 4th April ‘03 I – V Characteristics BATCH 12 Total wafers produced 11 Rejected wafers 1 Mean depl. voltage 32.5 V Mean bias current @ depl. 2.1 mA BATCH 13 Total wafers produced 9 Rejected wafers 2 Mean depl. voltage 26.6 V Mean bias current @ depl. 0.8 mA ECFA – DESY Amsterdam, 1st – 4th April ‘03 C – V measurements Useful technique to calculate the depletion voltage Quite uniform behaviour of the depletion voltage YIELD Batch 12 Batch 13 Not depleted pads 0/420 8/294 ECFA – DESY Amsterdam, 1st – 4th April ‘03 “Leaky” pads: the discovery In batch 12: the great part (90%) of the pads seems to be DC coupled In batch 13: only few percents Readout metal Resistor Al bridge Polysilicon residua Bias grid C R D No pin holes in SiO2 Surface leakage residua of polysilicon after the etching of the polysilicon layer Equivalent circuit with two opposite diodes. D1 D2 ECFA – DESY Amsterdam, 1st – 4th April ‘03 “Leaky” pads: the explanation ECFA – DESY Amsterdam, 1st – 4th April ‘03 “Leaky” pads: the solution External AC coupling SMD capacitors on the PCB Next batch will be DC coupled with external capacitors It will improve also the quality of the p-n junction reducing the thermal budget SMD capacitor ECFA – DESY Amsterdam, 1st – 4th April ‘03 Summary Three motherboards equipped with 16 sensors First test beam on going Yield satisfactory New batch with simpler technology has been started yet promising a better yield