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Figure 4. Trends of dislocation densities (normalized by the device D)
and pass yields (750 V MM+ and 650 V MM− for the studied devices A–D.
The trend of Cm values for all devices is shown in the inset.
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Conclusions
This improvement could be dominantly attributed to the
presence of maximum capacitance (Cm), which shunts the
crowding current during the ESD stress.
The variation in maximum capacitances may be attributed to
the parasitic capacitance effect induced by different surface
morphologies of p-GaN layers.
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