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Meeting
Advisor : Ming-Lun Lee
Student : Chih-Ciao Yang
Native defects in InxGaN1-x alloys
Solar Energy and Optoelectronic Devices Lab.
Introductions
• To elucidate the role of native defects in determining
the electronic and optical properties of InxGa1-xN.
• Epitaxial InN and InxGa1-xN grown on c-sapphire
by MBE.
• Defects introduced by high energy particle
irradiation.
Solar Energy and Optoelectronic Devices Lab.
Nelectron under Irradiations
Solar Energy and Optoelectronic Devices Lab.
Saturation Nelectron
Solar Energy and Optoelectronic Devices Lab.
Absorption Spectra
Solar Energy and Optoelectronic Devices Lab.
Summary 1
• High concentration of point defects stabilizes the
Fermi energy at EFS responsible for the pinning of
the Fermi energy on semiconductor surfaces.
• Free electron concentration and optical absorption
properties of InxGa1-xN alloys can be controlled by
high energy particle irradiation.
Solar Energy and Optoelectronic Devices Lab.