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Meeting~
Ultraviolet band-pass photodetectors
formed by Ga-doped ZnO contacts
to n-GaN
Postgraduate: K.H. Chang
Advisor: M.L. Lee, J. K. Sheu
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Outline
 Experiment Process.
 Result and Discussions.
- Characterization of GZO contact to n-GaN
photodetector.
 Conclusion.
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Experiment Process
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Result and Discussions
Schematic structure of GZO/n-GaN Schottky barrier PD.
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Result and Discussions
Typical dark I-V characteristics of the n-GaN/GZO Schottky barrier
PDs with LTG GaN cap layer. The inset shows the typical I-V characteristic
measured from two adjacent Cr/Au metal contacts with spacing of 5 m.
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Result and Discussions
Typical bias-dependent spectral response of the n-GaN/GZO Schottky barrier PDs. The
inset shows the typical transmittance of GZO films annealed at different temperatures.
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Conclusions
 We have demonstrated a UV band-pass GaN Schottky
barrier PD using a GZO top contact layer. With an unbiased
condition, the peak responsivity was estimated to be 0.10
A/W at 365 nm, corresponding to the quantum efficiency
of about 34%.
 When the reverse biases were below 10 V, the dark currents
of the PDs were well below 30 pA.
Electro-Optical Semiconductor Device & Solid-State Lighting Lab
Thank you for your attention !
Electro-Optical Semiconductor Device & Solid-State Lighting Lab