Transcript PTC Proposal

PTC Proposal
Seongjin Jang
September 09, 2013
Submit Application To PTC
• All the users should submit their process-related information to Process
Technology Committee (PTC) for approval.
• The purpose of this practice is for the PTC to understand exactly what the
users are trying to do and to examine the users’ ability to safely perform their
tasks.
• Once the PTC approves the process, the users will be notified.
• The users can use the equipment if they have completed the safety test and
equipment training.
• Violation of the rules will result in being disqualified.
Example 1:
Fabrication Process Flow
Step 1: 4’’ Silicon wafer with 200nm SiO2, single side polished
Step 2: Photolithography
•Image Reversal photo and develop
•HMDS, spin coat (coat recipe: [email protected], [email protected], 30sec@5krpm to get ~1.8um photoresist)
•Prebake (30min, 90C)
•Expose (MA6 with mask, 1.0-1.4 sec )
•Post-bake ( 100° C, 25 min or 65 sec 120 °C hotplate)
•Flood exposure without mask: (60sec on MA6)
•Develop (MIF 422)
Step 3: Ti/Au Electrode Deposition
•Standard thermal deposition Target deposition: 70A Ti
•Target deposition: 2000A Au
Step 4: Ti/Lift-off
•Acetone lift-off on electrode; followed by methanol and 2-propanol for cleaning.
•Ultrasonic ~2-3mins for quicker lift-off and clearing lift-off residues.
•Cleaning of solvents and contaminants with: acetone / methanol / 2-propanol and multiple rinse dumps.
Step 5: Silicon oxide etch
•ICP/RIE etch of silicon oxide
Step 6: Silicon etch
•Dry etch of 5 micron Si Substrate using XeF2
Example 1 (cont’d):
Fabrication process
1. 4’ wafer with 200 nm SiO2
2. Photolithography
3.Thermal physical deposition of
Au/Ti
4. Lift-off
5. ICP/RIE etch SiO2
6. XeF2 etch of 5 micron Si
substrate
Example 2:
Electrical Characterization of Graphene using
Nanomanipulator
• Purpose: voltage-current
measurements of graphene
flakes with electrical contacts
• Equipments required: SEM
with nanomanipulator or
Probe Station
• Parameters: Applied voltage
• Note :
– The electrical contacts
on the graphene will be
fabricated outside of the
MDL.
– Only characterization
(typically less than 10 V) and
will be done using the
currents (less than 1 mA)
requested equipments.
Example 2 (cont’d):
Process
Nanomanipulator Probe
Or Probe Station probe
Au/Cr
Pad
Silicon Oxide Wafer
Graphene