Transcript Nano-Fab Simulator Layout - Sinclair Community College

NanoFab Simulator Update
Nick Reeder, May 31, 2012
Update to Scales
• Changed vertical and horizontal scales on
display, and added menu option to make
scales equal or not.
– Question: Vertical scale’s max value is 2 m, but
most of our photoresists spin to coats thicker
than 2 m. Should we eliminate all but the
thinnest viscosities?
Updates to Dialog Boxes
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User now specifies:
– Power, pressure, and time for Sputter.
– Voltage, current, and time for Evaporate.
– Pressure, temperature, and time for CVD.
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Need look-up tables to interpolate deposition
rates based on user-supplied parameters.
(Currently rate = 0.1 m/sec for all of these
processes.)
Question:
– For each of the above, what limits should we impose
on the values that the user can enter?
Updates to Plasma Etch Code
• User now specifies power and pressure (as
well as time), and the code adjusts etch rate
accordingly.
• Questions:
– What limits should we impose on the power and
pressure values that the user can enter?
– On next slide, do curves for etch-scale-factor
versus pressure look right?
Etch Scale Factor vs Pressure
SF6
2.5
2
2
Scale Factor
2.5
1.5
1
CF4
0.5
1.5
1
SF6
0.5
0
0
0
100
200
300
400
500
600
0
50
Pressure (mtorr)
100
150
200
Pressure (mtorr)
O2
Ion mill
2.5
2.5
2
2
1.5
1
O2
0.5
Scale Factor
Scale Factor
Scale Factor
CF4
1.5
1
Ion mill
0.5
0
0
0
500
1000
1500
2000
Pressure (mtorr)
2500
3000
0
0.5
1
Pressure (mtorr)
1.5
2
Related Questions
– For spin coat, what are reasonable max/min
values for rpm?
– For implant, max/min values for dose and ion
energy?
– For bake, max/min values for temperature?
New Code: Bake
• Began coding Bake model based on
S  S0 e
T
( e
t)
• Need values of S0 and  for our photoresists.
To-Do List
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Fix spin-coat code so that resist does not adhere to underside of
horizontal surfaces.
Implement look-up tables to compute deposition rates for evaporate,
CVD, and sputter based on user-supplied parameters.
Fix oxidize, develop, polish dialog boxes to ask user for correct
parameters, and write code to compute depth from these values.
Continue writing bake code; need values for S0 and .
In expose code, implement diffraction of UV in air and absorption within
resist, with dependence on solvent content from bake code.
Fix etch code so that (for photoresist) etch rates depend on solvent
content from bake code.
Write new code for
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Lift-off
Clean
Profilometer
Write time-cost-quality code for all operations.
Write online help text.
Produce videos, photos, text for Tutorial tab.
Activity
Not started
Clean
Partial
X
Spin coat
Simulation coding
X
Bake
X
Mask/Expose/Develop
X
Evaporate
X
Thermal oxidation
X
CVD
X
Sputter
X
Wet etch
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Plasma etch
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Lift off
X
Polish
X
Implant
Track time, cost, quality of each process
User -interface coding
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X
History with option to revert
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Save/open history files
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Edit colors
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User-defined materials
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Profilometer
X
Producing embedded media (videos, photos, etc.)
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Testing
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Documentation
Complete
X