Transcript EE412 Week 4 E-beam Lithography for Optical Gratings and Waveguides Chia-Ming Chang Mentor: Richard Tiberio April 19, 2011

EE412 Week 4
E-beam Lithography for Optical
Gratings and Waveguides
Chia-Ming Chang
Mentor: Richard Tiberio
April 19, 2011
Project update
 Alignment marks for both ASML and e-beam lithography.
 Requirement of JEOL alignment marks (from Rich):
1mm
1mm
1-2um
1mm
1-2um
1mm
1-2um
1-2um
>500nm
>500nm
Project update
 Alignment marks for both ASML and e-beam lithography.
 ASML alignment marks library (from ASML staff). We might be
able to use some of their alignment marks for JEOL; for example,
PM marks.
5um
440um
1um
440um
10um
ASML PM marks
Project update
• 0 layer:
Registration marks for ASML
Made by ASML (XPA or PM)
• Etched depth: 120nm
• 1 layer:
Registration marks for JEOL
Made by ASML (PM)
Aligned to 0 layer
• Etched depth: 1um
Project update
 (1) Dose test
10um
100nm
Overlay test structure
 (2) Development test
Grating test structure
Project update
 (3) Overlay test: using ASML PM mark
JEOL
ASML
JEOL
Line scan
Line scan
ASML
Backup
Test plan I: Develop a process that can
combine ASML and E-beam litho
Fiber mode
Adiabatic taper
Optical waveguide
Input gratings
Output gratings
 Test structure: grating couplers
 Optical waveguides and adiabatic tapers are defined by ASML
 Grating couplers are defined by E-beam
 Methods: SEM, AFM, optical loss measurement
Devices
ASML: Waveguide
0.7um PR
E-beam: Grating
0.2um PMMA
SiO2
SiO2
Silicon
Silicon
E-beam alignment
mark
Equipment list
 Thermal Oxidation: tylan 1 and 2
 LPCVD: tylanBPSG, tylannitride
 Photolithography: ASML, JEOL E-beam
 Etch: P5000, amtetcher, drytek2
 Characterization : SEM @SNL, @SNC (Nova),
AFM
Timeline
 Week 1 - 2
 Project proposal and training
 Structure and process flow design
 Week 3 - 6
 ASML and E-beam litho characterization
 Device fabrications
 Week 7 and 8
 Device fabrications and testing (SEM, AFM, optical measurement)
 Week 9 and 10
 More testing
 Presentation and report