Transcript Document

Mid-Voltage Power MOSFETs
in PQFN Package Utilizing
Copper Clip Technology
The new power MOSFETs featuring IR’s latest silicon
technology are designed for switching applications
including DC to DC converters for network and telecom
equipment, AC-DC SMPS, and motor drive switches.
Available in a wide range of voltages from 40 V to 250
V, the devices provide various levels of on-state
resistance and gate charge to offer customers
optimized performance and cost for a given application.
Features
• Low thermal resistance to PCB (down to
<0.5 C/W) results in increased power
density
• 100% RG tested results in increased
reliability
• Low profile (<0.9 mm) results in increased
power density
• Industry-standard pinout results in multivendor compatibility
• Compatible with existing surface mount
techniques results in easier manufacturing
• RoHS compliant makes these devices
environmentally friendly
• MSL1 industrial qualification results in
increased reliability
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Advantages
• With a low 0.9 mm profile and industry standard pin out, the
devices’ high current rating and low RDS(on) enable higher efficiency,
power density and reliability compared to alternative solutions
requiring multiple parallel parts, making them well suited to
switching applications where board space is limited.
• Copper clip lowers the package resistance by around 1mOhm.
This feature is especially important because new silicon
technologies reach sub 1mOhm performance. Reducing the
package resistance reduces the overall product resistance.
• The copper clip allows industrial qualification to be granted
because the die is soldered on the lead frame.
• The copper clip allows the package to handle more current allowing
the die to be the limiting factor instead of the package.
June 2010