Transcript Slide 1

Form Quantum Wires and Quantum
Dots on Surfaces
with Vapor Deposition Techniques
David Ji
Feb. 7th, 06
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Part One: Quantum Wires
A. Growth of Quantum Wires Pinned on Substrate
1.vapor–liquid–solid (VLS)
Three Steps:
Alloying process
Nucleation of precursors
Axial growth
Why? Growing under the catalyst?
Vapors diffuse and condense at the existing solid/liquid interface, due to that less
energy will be involved with the crystal step growth as compared with secondary
nucleation events in a finite volume.
Ref: 3165 J. Am. Chem. Soc. 2001, 123, 3165-3166
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2. solid–liquid–solid mechanism (is not Vapor deposition)
SiNW as an example
alloy
heating
Ni
supersaturated
Gas
cooling
Amorphous nanowire!
Inert gas flow plays important role in the formation of the nanowire
Ref: Chem. Phys. Lett. 323 (2000) 224.
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3. Standing in Hard Template
prepare well-aligned NWs arrays by CVD without catalyst.
Templates:
Mesoporous template
Nano porous alumina template
Advantages:
a. The size and shape of SiNWs can be controlled and vary over a wide range
b. Well template-isolated nanowires arrays
c. Sharp tips and perfect lattices can be obtained
Ref: Chemical Physics Letters 374 (2003) 542–547
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B. Suspended NW Lying on Substrate
Suspended Carbon Nanotube Quantum Wires with Two Gates
Electron beam lithography (EBL): define the local-gate pattern, S/D pattern,
pattern catalyst islands.
Source (S) and drain (D) metal electrodes, a metal local gate (VGL) at the
bottom of the trench and a global Si back gate (VGB).
Show different properties compared with pinned CNT on substrate.
Ref: small 2005, 1, No. 1
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C. Challenges in Synthesizing NW:
In order to be capable of being incorporated into devices,
Controlled orientation and size of the grown
nanostructure required.
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Part Two: Quantum Dots (QD)
Formation Mechanism:
Stranski–Krastanow (SK) growth mode responsible
Applications: Optical and electronic properties
About quantum laser:
Characteristics would be improved dramatically due to reduction of
dimensionality of the electron motions in quantum nanostructures, proposed
by Arakawa and Sakaki
This is why people like Zero dimensionality
Ref: Appl. Phys. Lett., vol. 40, pp. 939–941, 1982.
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Hot Research Field:
Semiconductors QD. ex. binary & tertiary compound from IIIA and IVA.
InAs/GaAs dots extensively investigated.
GaSb/GaAs attracted interest for its potential application in capacitors.
Synthesis Method:
Organometal chemical vapor deposition (OMCVD)
ex. In forming QD compound containing Ar. ArH3 was replaced by
tertiarybutylarsine (TBAs)
Molecular beam epitaxy (MBE)
Creating a 'molecular beam' of a material which impinges on to the substrate.
Ref:
Physica E 13 (2002) 1181 – 1184
Appl. Phys. Lett., Vol. 82, No. 6, 10 February 2003
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