AUIRS2016S HIGH SIDE DRIVER WITH INTERNAL VS RECHARGE

PRESS RELEASE DATA SHEET

Features

• One high side output and internal low-side Vs recharge • CMOS Schmitt trigger inverted input with pull up resistor The AUIRS2016S is a high-voltage power MOSFET high-side driver featuring an internal Vs-to-GND recharge NMOS. The device’s output driver features a 250mA high pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150V above ground. The new IC uses a proprietary latch immune CMOS technology featuring exceptional negative Vs immunity to deliver the ruggedness and reliability essential for harsh environments and automotive under-the-hood applications.

Advantages

HI-RES GRAPHIC Automotive HOME PAGE

• Proprietary HVIC technology enables ruggedized monolithic construction and an industry benchmarking negative voltage spike immunity for fail proof operation even under extreme switching conditions and short circuit events.

• CMOS Schmitt trigger inverted reset with pull down resistor • 5V compatible logic level inputs • The IC is qualified according to AEC-Q100 standards and features an environmentally friendly, lead-free and RoHS compliant bill of material and are part of International Rectifier’s Zero-Defect initiative.

• Immune to –Vs spike and tolerant to dVs/dt • The AUIRS2016S is set up to be in line with typical change management requirements of the automotive market.