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Canon 4X1 Mask Stepper Jobs
ROCHESTER INSTITUTE OF TECHNOLOGY
MICROELECTRONIC ENGINEERING
Canon Four Levels per Mask Plate
Stepper Jobs
Dr. Lynn Fuller
Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering
Rochester Institute of Technology
82 Lomb Memorial Drive
Rochester, NY 14623-5604
Tel (585) 475-2035
Fax (585) 475-5041
Email: [email protected]
Department webpage: http://www.microe.rit.edu
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
2-8-2009 Canon_4X1_Masks.ppt
Dr. Lynn Fuller
Page 1
Canon 4X1 Mask Stepper Jobs
OUTLINE
Introduction
Chip Design
Calculations
Mask Example
Approach
Level 1 Details
Level 2,3,4,5,6,7,8,9,10,11,12 Details
Results
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 2
Canon 4X1 Mask Stepper Jobs
INTRODUCTION
Placing four photo levels on one mask plate can reduce the number
of mask plates by a factor of four. This saves time, costs and
inventory of masks needed for projects. For example a 12 level
mask set for CMOS will require only 3 mask plates.
The disadvantage of this approach is that the chip size is limited to
10mm by 10mm compared to 20mm by 20mm for 1 level per plate
masks.
The stepper jobs are slightly more complicated but once created
provide the same overlay and resolution.
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 3
Canon 4X1 Mask Stepper Jobs
CALCULATING SHIFTS TO OVER LAY LEVELS 2,3,4,5
The first layer is placed on the wafer with no alignment. Lets use an example where a chip has its
TVPA marks in the center of the chip and the B scope multi-marks are slightly above, and C scope
multi-marks are slightly to the left.
Center of shot is placed under the center of the optical column
1
4
1
4
2
3
2
3
1
2
4
3
1
Level
1
Level
4
Level
2
Level
3
4
2
3
The Mask from non chrome side
Each level is centered +/- 20 mm from
the center of the plate
Rochester Institute of Technology
Wafer after
1st exposure
with blades wide open
Microelectronic
Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 4
Canon 4X1 Mask Stepper Jobs
CALCULATING SHIFTS TO OVER LAY LEVEL 2
The subsequent layers are aligned by locating the center of the TVPA and multi-marks from the first
layer. Then calculating the center of the chip and moving it under the center of the optical column and
make the shot. If in the stepper job the TVPA mark is given as X=0 and Y=0 the shot will be made with
the 1st level TVPA under the center of the optical column resulting in exposure as shown. To get level 2
(red) to overlay level 1(green) we give x = -4mm and y = -4mm for the TVPA mark location in the
stepper job. The stepper will shift the wafer -4 mm in x and -4mm in y when moving the wafer under
the center of the optical column. Thus placing the 3rd quadrant (level 2) over the 2nd quadrant (level 1)
as desired.
1
4
1
4
1
2
2
3
2
1
1
3
3
1
4
3
2
4
2
3
4
2
1
4
Level
4
Level
2
Level
3
4
1
2
3
Level
1
4
3
2
3
The Mask from non chrome side
Rochester Institute of Technology
Wafer after
1st exposure
with blades wide open
Microelectronic
Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 5
Canon 4X1 Mask Stepper Jobs
CALCULATING SHIFTS TO OVER LAY LEVELS 3
To get level 3 to overlay level 1(green) we give x = -4mm and y = +4mm for the TVPA mark location in
the stepper job. The stepper will shift the wafer -4 mm in x and +4mm in y when moving the wafer
under the center of the optical column. Thus placing the 4th quadrant (level 3) over the 2nd quadrant
(level 1) as desired.
1
1
4
1
2
2
3
1
1
3
3
1
4
3
2
4
2
3
4
2
1
4
2
4
Level
4
Level
2
Level
3
4
1
2
3
Level
1
4
3
2
3
The Mask from non chrome side
Rochester Institute of Technology
Wafer after
1st exposure
with blades wide open
Microelectronic
Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 6
Canon 4X1 Mask Stepper Jobs
CALCULATING SHIFTS TO OVER LAY LEVEL 4
To get level 4 to overlay level 1(green) we give x = +4mm and y = +4mm for the TVPA mark location
in the stepper job. The stepper will shift the wafer +4 mm in x and +4mm in y when moving the wafer
under the center of the optical column. Thus placing the 1 st quadrant (level 4) over the 2 nd quadrant
(level 1) as desired.
1
1
4
1
2
2
3
1
1
3
3
1
4
3
2
4
2
3
4
2
1
4
2
4
Level
4
Level
2
Level
3
4
1
2
3
Level
1
4
3
2
3
The Mask from non chrome side
Rochester Institute of Technology
Wafer after
1st exposure
with blades wide open
Microelectronic
Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 7
Canon 4X1 Mask Stepper Jobs
CALCULATING SHIFTS TO OVER LAY LEVEL 5
To get level 5 to overlay level 1(green) we give x = -4mm and y = +4mm for the TVPA mark location
in the stepper job. The stepper will shift the wafer -4 mm in x and +4mm in y when moving the wafer
under the center of the optical column. Thus placing the 2 st quadrant (level 5) over the 2 nd quadrant
(level 1) as desired.
1
1
4
1
2
2
3
1
1
3
3
1
4
3
2
4
2
3
4
2
1
4
2
4
Level
8
Level
6
Level
7
4
1
4
2
3
Level
5
3
2
3
The Mask from non chrome side
Rochester Institute of Technology
Wafer after
1st exposure
with blades wide open
Microelectronic
Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 8
Canon 4X1 Mask Stepper Jobs
MIXED SUB-CMOS CHIP DESIGN
(Xur,Yur)
Alignment Keys
(X,Y)
(X,Y) (X,Y)
(X,Y)
(X,Y)
(0,0)
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 9
Canon 4X1 Mask Stepper Jobs
SMALL CMOS MASK EXAMPLE 8mmX8mm
Level 1 nwell
Level- 1
Center at
-20,20
Level- 4
Center at
20,20
Level 4 PVt
Alignment Keys
Fiducial Mark
Fiducial Mark
0,0
Level 2 active
Level- 2
Center at
-20,-20
Level 3 stop
Level- 3
Center at
20,-20
Keys
Rochester Institute of Technology
Microelectronic Engineering
View from Non-Chrome Side
© February 8, 2009
Dr. Lynn Fuller
Page 10
Canon 4X1 Mask Stepper Jobs
LARGE CMOS MASK EXAMPLE 10mmX10mm
View from Non-Chrome Side
Level- 1
Center at
-25,25
Level- 4
Center at
25,25
Level 1 nwell
Level 4 Vt
Fiducial Mark
Fiducial Mark
Alignment Keys
0,0
Level 2 active
Level 3 stop
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 11
Canon 4X1 Mask Stepper Jobs
CALCULATIONS FOR MIXED SUB-CMOS
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 12
Canon 4X1 Mask Stepper Jobs
CALCULATIONS FOR PMOS (SHORTCOURSE)
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 13
Canon 4X1 Mask Stepper Jobs
CALCULATIONS FOR LARGE CMOS TEMPLATE
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 14
Canon 4X1 Mask Stepper Jobs
APPROACH
First Level Exposure – cover the 1st, 3rd and 4th quadrants of the mask
using the blade position in the shot file.
- In the layout file create a block and shift the block CQ/5 mm
in X and –CQ/5 mm in Y to center the array on the wafer.
- In the process file select 1st Level – no alignment
Second level Exposure – cover the 1st, 2nd and 4th quadrants of the
mask using the blade position in the shot file.
-no shift in the layout file (Otherwise same as level 1)
- Shift the PA and Fine Alignment Mark positions on page 4
and 13 of the process file
Third level Exposure – cover the 1st, 2nd and 3rd quadrants of the
mask using the blade position in the shot file.
-no shift in the layout file
- Shift the PA and Fine Alignment Mark positions on page 4
and 13 of the process file
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 15
Canon 4X1 Mask Stepper Jobs
BLADE POSITIONS FOR SHOT FILES
BL
BR
BU
BD
LEVEL 1
LEVEL 2
2nd Quadrant 3nd Quadrant
-10mm
-10mm
0
0
10mm
0
0
-10mm
LEVEL 3
LEVEL 4
4nd Quadrant 1st Quadrant
0
0
10mm
10mm
0
10mm
-10mm
0
Bu = +10 mm
Level 1
Br = 0 mm
Bl = -10 mm
(0,0)
Bd = 0 mm
Rochester Institute of Technology
Microelectronic Engineering
Blade positions are in mm referenced at the wafer.
© February 8, 2009
Dr. Lynn Fuller
Page 16
Canon 4X1 Mask Stepper Jobs
1st LEVEL LAYOUT FILE
#### LAYOUT EDITOR (File ID)###
File name;
Lmixed4X1_nwell
1. Comment;
anything you want
(page-1)
#### LAYOUT EDITOR (File ID)###
(page-2)
1. Matrix Invalid Area: 13 mm
2. Step Size;
Sx = 8.2 mm
Sy = 8.2 mm
14
3. Matrix;
Clm =
Row =
14
4. Origin;
X= 0 mm
Y= 0 mm
5. Reticle Table Name ;
RF012subcmos
On page 2 you can create and shift blocks
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 17
Canon 4X1 Mask Stepper Jobs
1ST LEVEL LAYOUT CREATE AND SHIFT BLOCK
Select Function Key “Modify”
Select Function Key “Other Menu”
Select Function Key “Shift Copy Block”
Select Function Key “Add Block”
Row *
Column *
Go
Go Sure? 1 = Yes
Select Function Key “Shift Block”
X = 4mm
Y = -4mm
Clear Block 1 = Yes
Exit
Exit
Save
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 18
Canon 4X1 Mask Stepper Jobs
1st LEVEL - PROCESS FILE
#### PROCESS EDITOR (File ID)###
(page-1)
Lmixed4X_nwell/PFmixed4X_nwell
File name;
1. Comment; anything you want, like: second level active
2. Alignment Sequence: 1st Mask or AGA …. 1st Mask
3. TTL Alignment Mode (none, I-line or HeNe/B2)
HeNe/B2
PA
4. TV PA Measurement Mode;
#### PROCESS EDITOR (Reticle ID)###
(page-2)
Nwell
1. Reticle ID
#### PROCESS EDITOR (Fine Reticle Alignment)###
(page-3)
1. Fine Align Tol xy = 0.03 µm
Theta = 0.03 µm
The Process file has 36 pages, only highlighted pages can be accessed, if
AGA in item 2 page 2 is selected then page 4 is highlighted and gives row
and column and x,y location of the prealignment marks. If alignment
mode HeNe is selected page 13 gives the x&y coordinates of the fine
alignment marks, if I-line was selected then pg 10&11give fine alignment
st Mask is selected page 4 to 36 are bypassed.
mark locations,
if
1
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 19
Canon 4X1 Mask Stepper Jobs
2ND 3RD 4TH LEVEL PROCESS FILE
This process file does alignment to 2 TVPA marks and then
looks at 4 locations for fine alignment. It uses Broad-Band
illumination and 20P-4F multi-marks.
Page –17
1. Number of sample shots (2,4,6,8,12,16)
Main; 4
Preliminary ; 4
2. AGA for first wafer ; AGA
AGA for 2nd and more wafer ; AGA
Page –19
1.
Limit of x or y difference ; 0.5µm
(default=0.2µm, can be as large as 9µm)
C1….
R1….
Page –1 Alignment Mode
2. Alignment Sequence Mode; AGA
3. TTL Alignment mode. ; HeNe-TV
4. TV PA Measurement Mode ; PA
Page –4
1.
L) Shot
: clm= ? row= ?
PA Mark Position; Xlp=QPAX mm Ylp= QPAY mm
2.
R) Shot
: clm= ? row= ?
PA Mark Position; Xrp=QPAX mm Yrp= QPAY mm
Page –13
1.
AA Mark Position; B: X=BF2X mm Y = BF2Y mm
C: X=CF2X mm Y = CF2Y mm
Brot X=0
Y=0
2.
AA Mark Pattern ; 20P-4F
3.
Mark Condition ; Island
4.
Wafer Surface Condition ; 0
Page –15
1. AA illumination Mode ; Mode-3
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 20
Canon 4X1 Mask Stepper Jobs
2ND LEVEL OVERLAY VERIFICATION
Mixed Sub-CMOS Product
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 21
Canon 4X1 Mask Stepper Jobs
OVERLAY VERIFICATION FOR BIG CMOS
Level 4 VT
Level 3 Stop
Level 2 Active
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 22
Canon 4X1 Mask Stepper Jobs
EXAMPLE FILE NAMES
Small (< 8mm) CMOS Chips
Stepper Job
Layout File
Shot File
Process File
Reticle
Table
Reticle ID
mixed4x1_nwell
Lmixed4x1_nwell
Smixed4x1_nwell
Pmixed4x1_nwell
Rmixed4x
Mixed4x1
Mixed4x1_act
Lmixed4x1_act
Smixed4x1_act
Pmixed4x1_act
Rmixed4x
Mixed4x1
Mixed4x1_stop
Lmixed4x1_stop
Smixed4x1_stop
Pmixed4x1_stop
Rmixed4x
Mixed4x1
Mixed4x1_vt
Lmixed4x1_vt
Smixed4x1_vt
Pmixed4x1_vt
Rmixed4x
Mixed4x1
Mixed4x1_poly
Lmixed4x1_poly
Smixed4x1_poly
Pmixed4x1_poly
Rmixed4x
Mixed4x1
Note: mixed4x1_nwell is 1st level no alignment, quadrant 2
and Mixed4x1_poly is level 5, 9 etc., with alignment, quadrant 2
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 23
Canon 4X1 Mask Stepper Jobs
EXAMPLE FILE NAMES
Metal Gate PMOS and Shortcourse Jobs
Stepper Job
Layout File
Shot File
Process File
Reticle
Table
Reticle
ID
L082SHORT4X_DIFF
L082SHORT4X_DIFF
S082SHORT4X_DIFF
P082SHORT4X_DIFF
Rmixed4x
Mixed4x1
L082SHORT4X_OX
L082SHORT4X_OX
S082SHORT4X_OX
P082SHORT4X_OX
Rmixed4x
Mixed4x2
L082SHORT4X_CC
L082SHORT4X_CC
S082SHORT4X_CC
P082SHORT4X_CC
Rmixed4x
Mixed4x3
L082SHORT4X_M
L082SHORT4X_M
S082SHORT4X_M
P082SHORT4X_M
Rmixed4x
Mixed4x4
END
Note: L082SHORT4X_DIFF is 1st level no alignment, quadrant 2
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 24
Canon 4X1 Mask Stepper Jobs
EXAMPLE FILE NAMES
Large (< 10mm) CMOS Chips
Stepper Job
Layout File
Shot File
Process File
Reticle
Table
Reticle
ID
F083ADC_nwell
LF083ADC_nwell
SF083ADC_nwell
PF083ADC_nwell
Rmixed4x
Mixed4x1
F083ADC_act
LF083ADC_act
SF083ADC_act
PF083ADC_act
Rmixed4x
Mixed4x2
F083ADC_stop
LF083ADC_stop
SF083ADC_stop
PF083ADC_stop
Rmixed4x
Mixed4x3
F083ADC_vt
LF083ADC_vt
SF083ADC_vt
PF083ADC_vt
Rmixed4x
Mixed4x4
F083ADC_poly
LF083ADC_poly
SF083ADC_poly
PF083ADC_poly
Rmixed4x
Mixed4x1
Note: F083ADC _nwell is 1st level no alignment, quadrant 2
and F083ADC _poly is level 5, 9 etc., with alignment, quadrant 2
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 25
Canon 4X1 Mask Stepper Jobs
9.8mm X 9.8mm CHIP TEMPLATE
Template for
CMOS4Xdesigns
Each cell is 800 µm x 800µm
Entire Chip is 9800µm x 9800µm
Lower Half has Process
Verification Test Structures.
There is a 200µm street between
quadrants on the testchip
This is the largest chip that can
have 4 masks per plate.
Rochester Institute of Technology
Microelectronic Engineering
/shared/cmostestchip2007/CMOS4XTEMPLATE
© February 8, 2009
Dr. Lynn Fuller
Page 26
Canon 4X1 Mask Stepper Jobs
EXAMPLE OF A MEBES PLOT JOB
12 cm
LAYER 1,2,3,4
CMOS 4 LEVELS / PLATE
LVL
4
LVL
2
LVL
3
Y Axis
LVL
1
BARCODE
2/25/09 9:12:23 MEBES 967
REV, 4.6
SPECIFICATION FILE: JOB:SHORT.JB
DTITLE: CMOS FOUR LEVELS / PLATE
ITITLE: BARCODE
MTITLE: LEVELS 1,2,3,4
CASSETTE TYPE ID:14
LEVEL PLOTTED: 1
JOB SCALE: 1
JOB SCALE: 1.000000
ADDRESSING: 0.500000 MICRONS
PLOT SCALE: 1.00 TO 1 CM
0.0
0.0
ID PATTERN
1. NWELL.01
2. ACTIVE.01
3. STOP.05
4. VT
X DIMENSION Y DIMENSION PLACEMENT
25000.00
25000.00
25000.00
25000.00
25000.00 UNMIRROR
25000.00 UNMIRROR
25000.00 UNMIRROR
25000.00 UNMIRROR
X Axis
ORIENTATION
UNMIRROR
UNMIRROR
UNMIRROR
UNMIRROR
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 27
12 cm
TONE
NORMAL
NORMAL
NORMAL
NORMAL
Canon 4X1 Mask Stepper Jobs
CREATE A MEBES JOB DECK
SLICE EDIT, 14
14 means 5” by 5” glass
OPTICON AA=0.5, BA=0.5, PA, SA=40, VA=10
AA means address all levels = 0.5 µm
BA means beam size all levels = 0.5 µm
PA means all levels positive resist
SA means all levels spot current 40 nA
VA means all levels acceleration = 10KV
MTITLE 1, ADV-CMOS STI
DTITLE A, RIT EMCR650
ITITLE A, BARCODE
ORIENT A, ITITLE, TITLEROT=90, LOC=
CHIP1, (1,cmostestchip-LVL-01, RC=15),
first level of cmostestchip maskset
END
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
SLICE EDIT,14
OPTION AA=0.5, BA=0.5, PA, SA=250, VA=10
REPEAT A, 10
STITLE A, 10000, 10000, MEBES III SN @S
MTITLE 1, NWELL
MTITLE 2, ACTIVE
MTITLE 3, STOP
MTITLE 4, PMOS VT
MTITLE 5, POLY
MTITLE 6, LDD N
MTITLE 7, LDD P
MTITLE 8, N DS
MTITLE 9, P DS
MTITLE 10, CONTACT
MTITLE 11, METAL
DTITLE A, SUBMICRON CMOS
CHIP 1,(A,RITLOGO-50-01)
ROWS 10000/63500
CHIP 2,(A,FIDUCIA-LS-01)
ROWS 63500/63500
CHIP 3,
$ (1R,EMCR650-01-01),
$ (2,EMCR650-01-02),
$ (3,EMCR650-01-03),
$ (4,EMCR650-01-04),
$ (5,EMCR650-01-05),
$ (6,EMCR650-01-06),
$ (7,EMCR650-01-07),
$ (8,EMCR650-01-08),
$ (9,EMCR650-01-09),
$ (10,EMCR650-01-10),
$ (11,EMCR650-01-11)
ROWS 63500/63500
END
Page 28
Canon 4X1 Mask Stepper Jobs
REFERENCES
1. Robert Manley process improvement project.
2. Germain Fenger process improvement project.
3. Fuller, Lynn Introduction to Reduction Steppers. Rochester
Institute of Technology, 2002
4. FPA-200i1 Maintenance Training: Basic Operations Manual,
Canon USA
5.
Chuck Smith, MicroE Alumni 1987, Applications Engineer,
Canon USA, Inc. 804-328-6620x203, [email protected]
6.
Bill Cooman, Canon Equipment Engineer, Maintains the RIT
Canon FPA 2000-i1
Rochester Institute of Technology
Microelectronic Engineering
© February 8, 2009
Dr. Lynn Fuller
Page 29