BJT Small Signal Models - Brookdale Community College

Download Report

Transcript BJT Small Signal Models - Brookdale Community College

Transistor Modeling
ENGI 242
ELEC 222
January 2004
ENGI 242/ELEC 222
2
Hybrid Equivalent Circuit for BJT
V1
I2
January 2004
=
h11 h12
h21 h22
ENGI 242/ELEC 222
I1
V2
3
h-parameter Model for Common Emitter
Parameters from the spec sheet (x = lead based on circuit configuration):
h11 = hix
h12 = hrx
h21 = hfx
h22 = hox
hrx and hfx are dimensionless ratios
hix is an impedance <>
hox is an admittance <S>
January 2004
ENGI 242/ELEC 222
4
Short Circuit Input Impedance
January 2004
ENGI 242/ELEC 222
5
Open Circuit Reverse Transfer Ratio
January 2004
ENGI 242/ELEC 222
6
Short Circuit Forward Transfer Ratio
January 2004
ENGI 242/ELEC 222
7
Open Circuit Output Admittance
January 2004
ENGI 242/ELEC 222
8
Transistor Modeling
Hybrid Model Pi
ENGI 242
ELEC 222
HYBRID MODEL PI
January 2004
ENGI 242/ELEC 222
10
HYBRID MODEL PI PARAMETERS
• Parasitic Resistances
• rb = rb’b = ohmic resistance – voltage drop in base region
caused by transverse flow of majority carriers, 50 ≤ rb ≤
500
• rc = rce = collector emitter resistance – change in Ic due to
change in Vc, 20 ≤ rc ≤ 500
• rex = emitter lead resistance
– important if IC very large, 1 ≤ rex ≤ 3
January 2004
ENGI 242/ELEC 222
11
HYBRID MODEL PI PARAMETERS
• Parasitic Capacitances
• Cje0 = Base-emitter junction (depletion layer) capacitance,
0.1pF ≤ Cje0 ≤ 1pF
• C0 = Base-collector junction capacitance, 0.2pF ≤ C0 ≤
1pF
• Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF
• Cje = 2Cje0 (typical)
• 0 =.55V (typical)
• F = Forward transit time of minority carriers, average of
lifetime of holes and electrons, 0ps ≤ F ≤ 530ps
January 2004
ENGI 242/ELEC 222
12
HYBRID MODEL PI PARAMETERS
• r = rb’e = dynamic emitter resistance – magnitude varies to
give correct low frequency value of Vb’e for Ib
• r = rb’c = collector base resistance – accounts for change in
recombination component of Ib due to change in Vc which
causes a change in base storage
• c = Cb’e = dynamic emitter capacitance – due to Vb’e
stored charge
• c = Cb’c = collector base transistion capacitance (CTC)
plus Diffusion capacitance (Cd) due to base width
modulation
• gmV = gmVb’e = Ic – equivalent current generator
January 2004
ENGI 242/ELEC 222
13
Hybrid Pi Relationships
gm =
VT =
gm =
r =
IC
VT
kT
= 26mV @ 300K
q
IC
26mV
(26mV) ()
26mV
=
IC
IB
 = gm r 
ic =
January 2004
β vπ
= gm vπ
rπ
ENGI 242/ELEC 222
14
Hybrid Pi Relationships
January 2004
ENGI 242/ELEC 222
15
HYBRID MODEL PI MID BAND
January 2004
ENGI 242/ELEC 222
16
HYBRID MODEL PI HIGH FREQ.
January 2004
ENGI 242/ELEC 222
17
Common Emitter Amplifier
January 2004
ENGI 242/ELEC 222
18
Common Emitter Amplifier – DC Bias Model
January 2004
ENGI 242/ELEC 222
19
Common Emitter Amplifier - Complete Hybrid PI
January 2004
ENGI 242/ELEC 222
20
Mid Band Hybrid PI Common Emitter
January 2004
ENGI 242/ELEC 222
21
Equivalent Circuit to find ZO
January 2004
ENGI 242/ELEC 222
22
High Frequency Hybrid PI CE Amp
January 2004
ENGI 242/ELEC 222
23
Common Emitter Amplifier
January 2004
ENGI 242/ELEC 222
24
CE Amplifer Example output
January 2004
ENGI 242/ELEC 222
25
Common Emitter Amplifier
January 2004
ENGI 242/ELEC 222
26
CE Amplifer Example output
January 2004
ENGI 242/ELEC 222
27
Emitter Follower
January 2004
ENGI 242/ELEC 222
28
Emitter Follower
January 2004
ENGI 242/ELEC 222
29
Emitter Follower
January 2004
ENGI 242/ELEC 222
30
Emitter Follower
January 2004
ENGI 242/ELEC 222
31
Emitter Follower
January 2004
ENGI 242/ELEC 222
32
Common Base
January 2004
ENGI 242/ELEC 222
33
Common Base
January 2004
ENGI 242/ELEC 222
34