Transcript Chapter 6

Designing Combinational
Logic Circuits: Part2
Alternative Logic Forms:
Ratio Logic
Pass-Transistor
Dynamic Logic
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Combinational Circuits
Ratio Logic
VDD
Resistive
Load
VDD
Depletion
Load
RL
PDN
VSS
(a) resistive load
PMOS
Load
VSS
VT < 0
F
In1
In2
In3
VDD
F
In1
In2
In3
PDN
VSS
(b) depletion load NMOS
F
In1
In2
In3
PDN
VSS
(c) pseudo-NMOS
Goal: to reduce the number of devices over complementary CMOS
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Combinational Circuits
Ratio Logic
VDD
• N transistors + Load
Resistive
Load
• V OH = V DD
RL
• V OL =
F
In1
In2
In3
RPN + RL
• Assymetrical response
PDN
• Static power consumption
VSS
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• tpL = 0.69 RLCL
3
Combinational Circuits
Active Loads
VDD
Depletion
Load
VDD
PMOS
Load
VT < 0
VSS
F
In1
In2
In3
PDN
VSS
depletion load NMOS
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F
In1
In2
In3
PDN
VSS
pseudo-NMOS
4
Combinational Circuits
Pseudo-NMOS
VDD
A
B
C
D
F
CL
VOH = VDD (similar to complementary CMOS)
V2 
k

2
OL
p V
k  V
– V V
– -------------  = -----– V


n
DD
Tn OL
DD
Tp
2 
2

V OL =  VDD – V T  1 –
kp
1 – ------ (assuming that V T = V Tn = VTp )
kn
SMALLER AREA & LOAD BUT STATIC POWER DISSIPATION!!!
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Combinational Circuits
Pseudo-NMOS VTC
3.0
2.5
W/Lp = 4
Vout [V]
2.0
1.5
W/Lp = 2
1.0
0.5
W/Lp = 0.5
W/Lp = 1
W/Lp = 0.25
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Vin [V]
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Combinational Circuits
Improved Loads
VDD
M1
Enable
M2
M1 >> M2
F
A
B
C
D
CL
Adaptive Load
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Combinational Circuits
Even Better Noise Immunity
VDD
M1
VDD
M2
Out
A
A
B
B
Out
PDN1
PDN2
VSS
VSS
Differential Cascode Voltage Switch Logic (DCVSL)
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Combinational Circuits
DCVSL Example
Out
Out
B
B
A
B
B
A
XOR-NXOR gate
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Combinational Circuits
DCVSL Transient Response
V olta ge [V]
2.5
AB
1.5
0.5
-0.5 0
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AB
A,B
0.2
A,B
0.4
0.6
Time [ns]
0.8
1.0
10
Combinational Circuits
Pass-Transistor Logic
Inputs
B
Switch
Out
A
Out
Network
B
A
• N transistors
• No static consumption
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Combinational Circuits
Example: AND Gate
B
A
B
F = AB
0
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Combinational Circuits
NMOS-Only Logic
3.0
In
1.5m/0.25m
VDD
x
Out
0.5m/0.25m
0.5m/0.25m
Voltage [V]
In
Out
2.0
x
1.0
0.0
0
0.5
1
1.5
2
Time [ns]
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Combinational Circuits
NMOS-only Switch
C = 2.5V
C = 2.5 V
M2
A = 2.5 V
A = 2.5 V
B
B
Mn
CL
M1
VB does not pull up to 2.5V, but 2.5V - VTN
Threshold voltage loss causes
static power consumption
NMOS has higher threshold than PMOS (body effect)
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Combinational Circuits
NMOS Only Logic:
Level Restoring Transistor
VDD
VDD
Level Restorer
Mr
B
A
Mn
M2
X
Out
M1
• Advantage: Full Swing
• Restorer adds capacitance, takes away pull down current at X
• Ratio problem
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Combinational Circuits
Restorer Sizing
Voltage [V]
3.0
2.0
•Upper limit on restorer size
•Pass-transistor pull-down
can have several transistors in
stack
W/Lr =1.75/0.25
W/L r =1.50/0.25
1.0
W/Lr =1.0/0.25
0.0
0
100
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W/L r =1.25/0.25
300
Time [ps]
400
500
16
Combinational Circuits
Solution 2: Single Transistor Pass Gate
with VT=0
VDD
VDD
0V
2.5V
VDD
0V
Out
2.5V
WATCH OUT FOR LEAKAGE CURRENTS
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Combinational Circuits
Complementary Pass Transistor Logic
A
A
B
B
Pass-Transistor
Network
F
(a)
A
A
B
B
B
Inverse
Pass-Transistor
Network
B
B
A
F
B
B
A
A
B
F=AB
A
B
F=A+B
F=AB
AND/NAND
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A
F=AÝ
(b)
A
A
B
B
F=A+B
B
OR/NOR
A
F=AÝ
EXOR/NEXOR
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Combinational Circuits
Solution 3: Transmission Gate
C
A
C
A
B
B
C
C
C = 2.5 V
A = 2.5 V
B
CL
C=0V
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Combinational Circuits
Resistance of Transmission Gate
30
2.5 V
Resistance, ohms
Rn
20
Rn
Rp
2.5 V
Vou t
Rp
0V
10
Rn || Rp
0
0.0
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Vou t , V
2.0
20
Combinational Circuits
Pass-Transistor Based Multiplexer
S
S
S
S
VDD
S
A
VDD
M2
F
S
M1
B
S
GND
In1
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In2
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Combinational Circuits
Transmission Gate XOR
B
B
M2
A
A
F
M1
M3/M4
B
B
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Combinational Circuits
Delay in Transmission Gate Networks
2.5
2.5
V1
In
2.5
Vi
Vi-1
C
0
2.5
C
0
Vn-1
Vi+1
C
0
Vn
C
C
0
(a)
Req
Req
V1
In
Req
Vi
C
Vn-1
Vi+1
C
C
Req
Vn
C
C
(b)
m
Req
Req
Req
Req
Req
Req
In
C
CC
C
C
CC
C
(c)
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Combinational Circuits
Delay Optimization
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Combinational Circuits
Transmission Gate Full Adder
P
VDD
Ci
A
P
A
A
P
B
VDD
Ci
A
P
Ci
VDD
S Sum Generation
Ci
P
B
VDD
A
P
Co Carry Generation
Ci
A
Setup
P
Similar delays for sum and carry
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Combinational Circuits
Dynamic
Logic
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Combinational Circuits
Dynamic CMOS

In static circuits at every point in time (except
when switching) the output is connected to
either GND or VDD via a low resistance path.
 fan-in of n requires 2n (n N-type + n P-type)
devices

Dynamic circuits rely on the temporary
storage of signal values on the capacitance of
high impedance nodes.
 requires on n + 2 (n+1 N-type + 1 P-type)
transistors
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Combinational Circuits
Dynamic Gate
Clk
Clk
Mp
off
Mp on
Out
In1
In2
In3
Clk
CL
PDN
1
Out
((AB)+C)
A
C
B
Me
Clk
off
Me on
Two phase operation
Precharge (Clk = 0)
Evaluate (Clk = 1)
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Combinational Circuits
Conditions on Output
Once the output of a dynamic gate is
discharged, it cannot be charged again until
the next precharge operation.
 Inputs to the gate can make at most one
transition during evaluation.


Output can be in the high impedance state
during and after evaluation (PDN off), state is
stored on CL
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Combinational Circuits
Properties of Dynamic Gates

Logic function is implemented by the PDN only
 number of transistors is N + 2 (versus 2N for static complementary
CMOS)
Full swing outputs (VOL = GND and VOH = VDD)
 Non-ratioed - sizing of the devices does not affect
the logic levels
 Faster switching speeds

 reduced load capacitance due to lower input capacitance (Cin)
 reduced load capacitance due to smaller output loading (Cout)
 no Isc, so all the current provided by PDN goes into discharging CL
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Combinational Circuits
Properties of Dynamic Gates

Overall power dissipation usually higher than static
CMOS
 no static current path ever exists between VDD and GND
(including Psc)
 no glitching
 higher transition probabilities
 extra load on Clk

PDN starts to work as soon as the input signals
exceed VTn, so VM, VIH and VIL equal to VTn
 low noise margin (NML)

Needs a precharge/evaluate clock
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Combinational Circuits
Issues in Dynamic Design 1:
Charge Leakage
CLK
Clk
Mp
Out
CL
A
Clk
Evaluate
VOut
Me
Precharge
Leakage sources
Dominant component is subthreshold current
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Combinational Circuits
Solution to Charge Leakage
Keeper
Clk
Mp
A
Mkp
CL
Out
B
Clk
Me
Same approach as level restorer for pass-transistor logic
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Combinational Circuits
Issues in Dynamic Design 2:
Charge Sharing
Clk
Mp
Out
A
CL
B=0
Clk
Charge stored originally on
CL is redistributed (shared)
over CL and CA leading to
reduced robustness
CA
Me
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Combinational Circuits
Charge Sharing Example
Clk
A
A
B
B
B
Cc=15fF
C
C
Ca=15fF
Out
CL=50fF
!B
Cb=15fF
Cd=10fF
Clk
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Combinational Circuits
Charge Sharing
VDD
case 1) if V out < VTn
VDD
Clk

Mp
Mp
Out
Out
CL
A
A
==
BB
00
Clk 
CL
Ma
Ma
XX
M
Mb
b
Mee
M
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a
CC
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C L VDD = C L Vout  t  + Ca  VDD – V Tn  V X  
or
Ca
V out = Vout  t  – V DD = – --------  V DD – V Tn  V X  
C
L
case 2) if V out > VTn
C
 --------------------a -
Vout = –V DD 

C
+
C
 a
L
37
Combinational Circuits
Solution to Charge
Redistribution
Clk
Mp
Mkp
Clk
Out
A
B
Clk
Me
Precharge internal nodes using a clock-driven transistor
(at the cost of increased area and power)
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Combinational Circuits
Issues in Dynamic Design 3:
Backgate Coupling
Clk
Mp
A=0
Out1 =1
CL1
Out2 =0
CL2
In
B=0
Clk
Me
Dynamic NAND
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Static NAND
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Combinational Circuits
Backgate Coupling Effect
3
2
Out1
1
Clk
0
In
Out2
2
Time, ns
-1
0
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6
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Combinational Circuits
Issues in Dynamic Design 4:
Clock Feedthrough
Clk
Mp
A
Out
CL
B
Clk
Me
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Coupling between Out and
Clk input of the precharge
device due to the gate to
drain capacitance. So
voltage of Out can rise
above VDD. The fast rising
(and falling edges) of the
clock couple to Out.
41
Combinational Circuits
Clock Feedthrough
Clock feedthrough
Clk
Out
2.5
In1
1.5
In2
In3
In &
Clk
0.5
In4
Out
Clk
-0.5
0
0.5
Time, ns
1
Clock feedthrough
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Combinational Circuits
Other Effects
 Capacitive
coupling
 Substrate coupling
 Minority charge injection
 Supply noise (ground bounce)
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Combinational Circuits
Cascading Dynamic Gates
V
Clk
Clk
Mp
Mp
Out1
Clk
Me
Out2
In
In
Clk
Clk
Me
Out1
VTn
V
Out2
t
Only 0  1 transitions allowed at inputs!
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Combinational Circuits
Domino Logic
Clk
In1
In2
In3
Clk
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11
10
PDN
Me
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Out1
Clk
Mp Mkp
Out2
00
01
In4
In5
Clk
PDN
Me
45
Combinational Circuits
Why Domino?
Clk
Ini
Inj
Clk
PDN
Ini
Inj
PDN
Ini
Inj
PDN
Ini
Inj
PDN
Like falling dominos!
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Combinational Circuits
Properties of Domino Logic
Only non-inverting logic can be implemented
 Very high speed

 static inverter can be skewed, only L-H transition
 Input capacitance reduced – smaller logical effort
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Combinational Circuits
Designing with Domino Logic
VDD
VDD
VDD
Clk
Mp
Clk
Mp
Out1
Mr
Out2
In1
In2
In3
PDN
PDN
In4
Can be eliminated!
Clk
Me
Clk
Me
Inputs = 0
during precharge
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Combinational Circuits
Footless Domino
VDD
Clk
VDD
Mp
Clk
Mp
Out1
0
Clk
1
0
Outn
1
0
In2
0
Mp
Out2
In1
1
VDD
1
0
In3
1
0
1
Inn
1
0
The first gate in the chain needs a foot switch
Precharge is rippling – short-circuit current
A solution is to delay the clock for each stage
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Combinational Circuits
Differential (Dual Rail) Domino
off
Mp Mkp
Clk
Out = AB
1
on
Mkp
0
Clk
Mp
1
A
!A
0
Out = AB
!B
B
Clk
Me
Solves the problem of non-inverting logic
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Combinational Circuits
np-CMOS
Clk
In1
In2
In3
Mp
11
10
PDN
Clk
Me
Out1
Clk
Me
In4
In5
PUN
00
01
Clk
Mp
Out2
(to PDN)
Only 0  1 transitions allowed at inputs of PDN
Only 1  0 transitions allowed at inputs of PUN
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Combinational Circuits
NORA Logic
Clk
In1
In2
In3
Mp
11
10
Out1
PDN
Clk
In4
In5
PUN
Clk
to other
PDN’s
WARNING: Very sensitive to noise!
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00
01
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Clk
Mp
Out2
(to PDN)
to other
PUN’s
52
Combinational Circuits
Homework 6
Design (in Sue) a CPL version of the 16-bit
ripple adder using transistors from the AMI
0.6 process. Simulate in Hspice and
measure the worst case delay and average
power/MHz.
2. Design (in Sue and simulate) a Domino
version of the same ripple adder – measure
the w.c. delay and average power/MHz.
(How do these designs compare to Static
CMOS?)
1.
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