Transcript Folie 1
8th European Workshop on Microelectronics Education, Darmstadt, 10.5.2010 Challenges in the Development of Mobile Phones Dr. Christoph Kutter Corporate VP, R&D Excellence Infineon Technologies AG Content Mobile Phone Market Thrills and Challenges Success Example: Egoldvoice – Winner of the Innovation Award Infineon at a Glance 7/7/2015 Copyright © Infineon Technologies 2010. All rights reserved. Page 2 Semiconductor market 40% 37% 28% 18% 18% 22% 267 248 4% -8% 30% -8% 132 137 126 213 1% 204 227 7% 256 249 3% 226 9% 291 10% -3% 20% 10% 0% 166 149 139 141 -10% -9% -20% -30% -32% -40% 1996 1998 2000 2002 2004 2006 2008 2010 Source: WSTS, iSupply, Gartner, VLSI, IC Insights, Future Horizons, Infineon 11/19/2009 Copyright © Infineon Technologies 2010. All rights reserved. Page 3 Situation in Production Jan 2009 April 2010 capacity Auslastung Nachfrage Anmerkung: Layer Starts 8", Bsp. Frontend Power Fast Switch from Idle to Allocation Situation Anmerkung: Graphik zeigt Kapazitätsentwicklung der vergangenen Monate. 28. April, 2010 For internal use only Copyright © Infineon Technologies 2010. All rights reserved. Page 4 Unit Shipments of Selected Applications [2009E] Million units Mobile Phones MP3 Player Notbooks Digital Set Top Boxes PCs DVD Player/ Recorder Digital Cameras Video Games 7/7/2015 Copyright © Infineon Technologies 2010. All rights reserved. Page 5 New Platform Development and Efforts Year 1 Year 2 Year 3 Year 4 HW Components Platform SW Components Lead Customer Project HW System and SW Mai, 2010 2nd Customer Project typ. 12 months typ. 6 months FW Copyright © Infineon Technologies 2008. All rights reserved. Page 6 Content Mobile Phone Market Thrills and Challenges Success Example: Egoldvoice – Winner of the Innovation Award Infineon at a Glance 7/7/2015 Copyright © Infineon Technologies 2010. All rights reserved. Page 7 System on Chip Thrills and Challenges Performance Low Power Integration Cost 2009-09-09 Copyright © Infineon Technologies 2009. All rights reserved. Page 8 Performance Need Peak Rate (Time) 2G 3G 4G GPRS 80 kbps (500s) EDGE 238 kbps (168s) UMTS 384 kbps (104s) HSDPA 7.2 Mbps (5.6s) LTE 150 Mbps (0.3s) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Data Downloaded (Mega-Bytes) SMS Email Java Games VDSL2 7/7/2015 Video 50 Mbps (0.8s) Copyright © Infineon Technologies 2009. All rights reserved. Page 9 Performance Need: Inner Receiver 10000 10 GIPS 1000 1 100 0,1 0,01 instructions/bit 100 10 GSM GPRS EDGE UMTS HSPA LTE Inner Receiver Complexity Doubles Every 2.5 Years 2009-09-09 Copyright © Infineon Technologies 2009. All rights reserved. Page 10 Power Consumption: What do you want to do with your Mobile Phone? Communicate 2009-09-09 Warming your Hands Copyright © Infineon Technologies 2009. All rights reserved. Page 11 Typical Low Power Applications … and their current consumption GSM Active ~ 200 mA Standby ~ 1 – 2 mA Contactless Controller ~ 2 – 10mA Hearing Aid ~ 1 mA RFID transponder ~ 20µA – 100µA Quartz Clock ~ 250nA Copyright © Infineon Technologies 2009. All rights reserved. Page 12 Power Consumption Basics P = Pdynamisch + Pstatisch 130 nm 2009-09-09 90 nm Copyright © Infineon Technologies 2009. All rights reserved. 65 nm Page 13 Real Life example of Leakage current improvement 180nm 130µA (worst case) hVt @ 1.8V C10 E-Gold V3 Factor 6.3x factor: 6.3x C11 S-Gold 890µA hVt @ 1.5V Tweak VR-RAM ROM off 130nm Factor 25x factor: ~25x 0.76 0.48 rVt @ 1.2V 13.5mA 0.25 90nm C12 S-Gold New Architecture Well bias 1.0 1.6 low Vdd RAM sleep Mixed rVt + LLD ROMs off 3.0 3.4 Copyright © Infineon Technologies 2009. All rights reserved. 8.9 LP RAM 13.5 Page 14 Mobile Phone in Stand-by Modus Active until ... SW puts system in idle mode ARM leaves WFI state SW puts system in normal mode ARM enters WFI state HW prewakeup trigger active SW puts system in deep sleep Current consumed by baseband domain Paging Mode plus Additional Battery measurement Actions Temperature mgt 2009-09-09 Location update Neighbor cell monitoring Display update Copyright © Infineon Technologies 2009. All rights reserved. Page 15 System on Chip Thrills and Challenges Technology Scaling Performance Low Power Techniques: Freq./Volt. Scaling, Low Power Power switches, … SOC Integration of Integration Digital, Analoge, RF Integration of External Cost Elements, e.g. Capacitor 2009-09-09 Copyright © Infineon Technologies 2009. All rights reserved. Page 16 Skaling Theory Lgate / Lgate Source Drain Skaling Factor : (Gate) Length (Wire) Width Drain Result: L/ W/ Oxid Thickness tox / Voltage V/ 7/7/2015 2009-09-09 Source Density Speed Power Copyright © Infineon Technologies 2009. All rights reserved. 2 1/ 2 Page 17 Skaling Theory Lgate / Lgate Source Drain Skaling Factor : (Gate) Length (Wire) Width Drain Result: L/ W/ Oxid Thickness tox / Voltage V/ 7/7/2015 2009-09-09 Source Density Speed Power Copyright © Infineon Technologies 2009. All rights reserved. 2 1/ 2 Page 18 Optical Enhancement Techniques 250nm Design Mask Wafer 7/7/2015 Copyright © Infineon Technologies 2009. All rights reserved. Page 19 Optical Enhancement Techniques 250nm 90nm Design Mask Wafer + high NA 7/7/2015 Copyright © Infineon Technologies 2009. All rights reserved. Page 20 Optical Enhancement Techniques 250nm 90nm Design Mask Wafer + high NA 7/7/2015 Copyright © Infineon Technologies 2009. All rights reserved. Page 21 Optical Enhancement Techniques 250nm 90nm 28nm 28nm Design Mask Wafer + high NA 7/7/2015 + Immersion Copyright © Infineon Technologies 2009. All rights reserved. Page 22 Optical Enhancement Techniques 250nm 90nm 28nm 28nm Design Mask 1 Mask 2 Mask Wafer + high NA 7/7/2015 + Immersion Copyright © Infineon Technologies 2009. All rights reserved. Page 23 NAND Flash Technology Gate = Wordline 32 nm technology Floating Gate Source Isolation Gate = Drain Source: Hynix 7/7/2015 Wordline Source Copyright © Infineon Technologies 2009. All rights reserved. Page 24 NAND Flash Technology 32 nm technology 2x nm technology Source: Hynix 7/7/2015 Copyright © Infineon Technologies 2009. All rights reserved. Page 25 NAND Flash Technology Gate 1E-3 ”1" 1E-4 1E-5 Gate 1E-6 Width 20nm Thickness Idrain (A) Floating ”0" 1E-7 1E-8 1E-9 -2 Tunnel-Oxide 0 2 4 6 8 10 Vcg (V) 10nm for a Vth shift of 4 V: Vfg = 1.3 V Q= Vfg CTOX = 50 electrons Source: Hynix 7/7/2015 Copyright © Infineon Technologies 2009. All rights reserved. Page 26 Skaling Theory Lgate / Lgate Source Drain Skaling Factor : (Gate) Length (Wire) Width Drain Result: L/ W/ Oxid Thickness tox / Voltage V/ 7/7/2015 2009-09-09 Source Density Speed Power Copyright © Infineon Technologies 2009. All rights reserved. 2 1/ 2 Page 27 Skaling Theory Lgate / Lgate Source Drain Skaling Factor : (Gate) Length (Wire) Width Drain Result: L/ W/ Oxid Thickness tox / Voltage V/ 7/7/2015 2009-09-09 Source Density Speed Power 2 1/ 2 I_off ? Copyright © Infineon Technologies 2009. All rights reserved. Page 28 Skaling Theory Gate Source Drain Thickness Gate-Oxide Gate-Leckstrom I Gate SiO2: k=3.9 Leaka ge 4nm 7/7/2015 2009-09-09 3nm 2nm 1nm OxidDicke Copyright © Infineon Technologies 2009. All rights reserved. HfO2: k=25 Page 29 Neue Architekturen: Fully Depleted FET on SOI Oxid Si-Kanal: ca. 7nm IBM, IEDM 2009 Potential Solution for 22nm node Content Mobile Phone Market Thrills and Challenges Success Example: Egoldvoice – Winner of the Innovation Award Infineon at a Glance 7/7/2015 Copyright © Infineon Technologies 2010. All rights reserved. Page 31 The Economist, March2005 2009-09-09 Mixed Signal Audio Power Hochfrequenz µ-Controller 70% Digital Digital Signal Processing Memory 2009-09-09 30% Analog 20 Million Transistors Memory State of the Art Modem Cards: Left: HSDPA (50x32 mm²) – Right: GPRS (17x25mm²) Memory PMU Baseband 26 MHz RF Quad- TRX Band EDGE PA Memory ASM 2009-09-09 Triband WCDMA PAs Modern Single chip solutions for mobile phones 2005 2006 2007 Mounted PCB area 27 cm2 9 cm2 4 cm2 Components 200 100 50 PCB Layers 6 4 4 Key Components 3 2 1 Jan 05, 2010 Copyright © Infineon Technologies 2010. All rights reserved. Page 35 X-GOLD™101: Winner of the Innovation Award of German industry for the best technological innovation 2008 More than 180 million devices were sold so far! April, 16, 2008 Copyright © Infineon Technologies 2009. All rights reserved. Page 36 Content Mobile Phone Market Thrills and Challenges Success Example: Egoldvoice – Winner of the Innovation Award Infineon at a Glance Copyright © Infineon Technologies 2010. All rights reserved. Infineon at a Glance The Company Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy efficiency, Communications and Security Revenue in FY 2009: 3.027 billion EUR Some 26,000 employees worldwide (as of Sept 2009) Strong technology portfolio with about 22,900 patents and patent applications More than 30 major R&D locations Germany‘s largest semiconductor company 11/19/2009 Copyright © Infineon Technologies 2010. All rights reserved. Page 38 We focus on our Target Markets Focus Areas Core Competencies Energy Efficiency Analog/Mixed Signal Communications RF Security Power Embedded Control Our Target Markets Automotive Industrial Electronics Chip Card & Security Mobile Phone Platforms 11/19/2009 Copyright © Infineon Technologies 2010. All rights reserved. Page 39 Requirements on Students Study of Electrical Engineering High marks Experience in Low Power Circuit Design 25 years old 10y experience in high speed, analog/mixed signal, and RF PhD in Physics and Hablitation in Mathematics Inventor of 20 standard relevant patents Winner of Noble Price Solver of the World Energy Problem Inventor of the perpetuum mobile Copyright © Infineon Technologies 2010. All rights reserved. Requirements on Students Scientific Skills: Analytical Skills Problem Solver Skills Diplom, Master or PhD Very High Marks Soft Skills: Team Player Language Skills Curiosity Enthusiasm Ready to go the extra Mile Copyright © Infineon Technologies 2010. All rights reserved. 7/7/2015 Copyright © Infineon Technologies 2010. All rights reserved. Page 42