Transcript Bez nadpisu

MG CMOS
Control Plan Numbe r 70ASZ24513A
Re v O
X
Key Contact/Phone : Mohamed Al-Mqbali
Production
MOS1 Device
Core Team: Colin Waller, Mohamed Al-Mqbali
MOS1 Process Groups
Supplier/Plant
MOTOROLA MOS1 East Kilbride
Part Numbers: - 14xxx Logic , 145017, 145018, SC370696 ETC.
Name/Description MOS1 Metal Gate CMOS (Generic) 4" Line
Characte ristics
Process
Machine,Device,
Process/Operation
Name/Operation
Jig,Tools for Mfg
Number
Description
Process
Product
28th of August
Supplier Code
Page 2 of 3
Date (Rev
Date (Orig)
Pre-launch (XC)
15.9.1994
Customer Engineering Approval (If Req'd)
Customer Quality Approval/Date (If Req'd)
Sample
Special
Char. Class
Sheet Resistivity
Oxide Thickness
Sheet Resistivity
Oxide Thickness
Product/Process Evaluation
Size
Specification/ Measurement
Technique
Tolerance
See Spec
Prometrix vp10
See Spec
1DIFF_BRU_06B1 Nanometrics 1DIFF_BRU_06B1
See Spec
Prometrix vp10
See Spec
1DIFF_BRU_06C1 Nanometrics 1DIFF_BRU_06C1
Freq
See Spec
1DIFF_BRU_06B1
See Spec
1DIFF_BRU_06C1
Control
Method
Reaction Plan
XBAR R
1DIFF_OCAP4_M4C1
XBAR R
1DIFF_OCAP4_03A
K308A_N+DF
N_Plus Deposition
Bruce Furnace
K309A_N+OX
N-Plus Oxidation
Bruce Furnace
K485_GTMK
Gate Mask
(06D Layer)
PE240/340
ADI
Visual Inspection
See Spec
1PRINT_ADI09
Microscope
See Spec
1PRINT_ADI06
See Spec
1PRINT_ADI06
1PRINT_ADI03, ADI07, ADI08
K486A_GTET
Oxide Etch for Metal
Gate 06D
Wet Bench
TOX ACI
Etch Rate Check
ACI/AEI Visual
CWC
Inspection
See Spec
1ETCH_WALKB
Microscope
Nanometrics
1ETCH_ACI0
1ETCH_AEI0
1ETCH_ACI0
1ETCH_AEI0
1OPERATION_1EW94
K585A_GTOX
MEG Gate Oxidation
8016 Furnace
See Spec
1DIFF_8016_P1B
Nanometrcs
SCA
K588A_GIMM
Gate Adjust Implant
Mask (06K Layer).
PE240/340
See Spec
1PTINT_ADI09
Microscope
See Spec
1DIFF_8016_01E1
1DIFF_8016_01E4
See Spec
1PRINT_ADI06
See Spec
1DIFF_8016_01E1
1DIFF_8016_01E4
See Spec
1PRINT_ADI06
K590A_GTIM
Gate Implant
Varian DF4 Varian
DF3000
K591A_RSTP
Resist Strip for MEG
06K Layer.
See Spec
12MSZ098158A
See Spec
1ETCH_ACI0
1ETCH_AEI0
See Spec
12MSZ098158A
See Spec
1ETCH_ACI0
1ETCH_AEI0
See Spec
1DIFF_8016_20B
IPC
K595A_IMAN
Implant Anneal
8016 Furnace
K620A_POHM
PREOHM Mask
(06A Layer)
PE240/340
K621A_POHE
MEG Oxide Etch
(06A Layer)
Wet Bench
K700A_ALSP
Metal Deposition
(Sputter)
Varian 3180/3190
K740A_NMTM
TOX
SCA Parameters
ADI
Visual Inspection
Implant Dose
Implant Energy
N
See Spec
12MSZ098158A
TOX ACI
Etch Rate Check
ACI/AEI Visual
CWC
Inspection
Prometric
Microscope
Nanometrics
XBAR R
1DIFF4_800_AVE_HELP
1DIFF4_900A_AVE_HELP
1PRINT_ADI03 , ADI07 ,
ADI08
XBAR R
OCAP_MEDI4
1OPERATION_1EW94
Promis Chart Limits
SCA
See Spec
1DIFF_8016_20B
ADI
Visual Inspection
See Spec
1PTINT_ADI09
Microscope
See Spec
1PRINT_ADI06
See Spec
1PRINT_ADI06
1PRINT_ADI03 , ADI07 ,
ADI08
TOX ACI
Etch Rate Check
ACI/AEI Visual
CWC
Inspection
See Spec
1ETCH_WALKB
Microscope
Nanometrics
1ETCH_ACI0
1ETCH_AEI0
1ETCH_ACI0
1ETCH_AEI0
1OPERATION_1EW94
See Spec
1FILMS_VAR4_P2
Nanospec
M Guage
See Spec
1PRINT_ADI06
Microscope
SCA
Parameters
Resistivity
Reflectivity
Metal Mask
ADI
(Negative Resist) 08 Perkin Elmer 240/340
Visual Inspection
Layer
Al
*
Al
SiO2
P+
Len pre potrebu SEI a.s. (For SEI a.s. use only)
P
See Spec
See Spec
1FILMS_VAR4_P2 1FILMS_VAR4_P2
See Spec
1PRINT_ADI06
See Spec
1PRINT_ADI06
V Charts
XBAR R
1DIFF_SCA_QOX_OCAP
SPUT_AVE_HELPL
1PRINT_ADI03, ADI07, ADI08
SiO2
N+
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MG CMOS invertor
Metal Gate CMOS Invertor
Invertor je základným prvkom logických obvodov. V prípade technológie CMOS sa
skladá z p a n kanálového tranzistora v komplementárnom zapojení.
UDD
Al
p
SiO2
U [V]
The invertor is a basic of logical circuits. For CMOS (Complementary MOS) technology is constructed with p and n channel devices.
I
P+
N
U
Al
UG
n
P
USS
Len pre potrebu SEI a.s. (For SEI a.s. use only)
SiO2
N+
UG
[V]
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MG CMOS štruktúra
MG CMOS Cross Section
Si typ N 100 - fosfor (Phosphorus) 3,5-6,5 Wcm
SiO2
P-jama (P-Well) - bór (Boron) 6,5 mm, 1,1kW/o
AlSi 1mm
P+ 2,2 mm, 46W/o
PSG 820nm
N+ 1,9 mm, 24W/o
Si3N4 650nm
Len pre potrebu SEI a.s. (For SEI a.s. use only)
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Document 1DIFF BRU_O3B.02 (ACTIVE) Updated: 18-JUN-1998 01:52
Document 1DIFF 8016_3P2.01 (ACTIVE
MOS 1 4" MEG/SIG INTIAL OX FURNACE CYCLE - BRUCE SYSTEMS
MOS1 4" 8016 P+DEPOSITION - FURNACE CYCLE
B7T2 & 1B7T3 ONLY
1.
Stand by in N2 and O2 flush at 850 Deg C.
2.
Boat load in N2 at 850 Deg C. at 3"/min.
3.
Ramp up in N2 to 1020 Deg C. (21 mins).
4.
Temp. stabilisation in N2. (5 mins).
5.
Oxidation in N2 and O2 at 1020 Deg C. (4 mins).
6.
Source stabilisation to extract and oxidise in N2 and O2 at 1020 Deg C.
(2 mins)
7.
Deposition in N2, O2 and BBr3 at 1020 Deg C. (60 +/- 10 mins)
8.
O2 flush at 1020 Deg C. (3 mins).
9.
Ramp down in N2 to 850 Deg C. (62 mins)
TEMP Standby 800.0 degsC +/- 1.0 degsC
10.
Unload in N2 at 850 Deg C. at 3"/Min
Oxidation 1000.0 degsC +/- 1.0 degsC (C, S)
1005.0 degsC +/- 1.0 degsC (H only)
11.
Cool down in N2 and O2 flush at 850 Deg C. (10 mins)
STEP
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TIME
00:00:00
00:15:00
00:12:00
00:01:00
00:08:00
00:06:00
00:01:00
00:20:00
**:**:**
00:01:00
00:00:30
01:00:00
00:10:00
00:12:00
00:20:00
TEMP
800
RAMP
850
850
RAMP
1000
1000
1000
1000
000
1000
RAMP
850
850
800
GASES
N2
N2
O2
O2
O2
O2
N2, O2
O2, H2
O2, H2, HCl
N2, O2
N2
N2
N2
N2
N2
DESCRIPTION
STANDBY
RAMP TO 850DEG C
LOAD IN
STABILISE
RAMP TO 1000DEG C
STABILISE
SHOWERHEAD PURGE
WET OX & PROFILE
WET OX & HCl
SHOWERHEAD PURGE
HCl MFC PURGE
RAMP DOWN
STABILISE
UNLOAD
BOAT COOL & RAMP DOWN
**:**:** VARIABLE OXIDATION TIME (01:20:00 +/- 00:15:00)
TOLERANCES
GASES N2
O2
H2
HCl
9.0L (+/- 0.1L)
4.0L (+/- 0.1L) }
H2:O2 = 1.6:1
6.4L (+/- 0.1L) }
156 SCCM (+/- 0.1 SCCM)
Gas
B Flows:
B
B
B
B
B
B
B N2:B
B
O2:
B
B
B
B
B
O2 Flush:
Source:
B
B
B
B B B
B
B
B
8.0
B L/Min.B+/- 1 L/Min
B
B
45 B
cc/Min.
B
B
B
7.0
30
B
L/Min.
g/Min.
Temperature:
at 1020 Deg C.: Hook zone
Centre & Source zones
= 1025 Deg C.
= 1020 Deg C.
Bubbler temperature = room temperature (approx. 20 Deg C.)
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Document 1DIFF BRU_O6B2.02 (ACTIVE)
Document 1DIFF 8016_P1A.02 (ACTIVE) Updated: 19-MAY-1997
N+ DEPOSITION PROCESS FURNACE CYCLE
GATE OXIDATION FURNACE CYCLE
Gas Flows
STEP
00
01
02
03
04
05
06
07
08
09
10
11
12
13
14
TIME
TEMP
GASES
DESCRIPTION
00:00:00
00:00:20
00:15:30
00:00:10
00:00:20
00:30:00
00:01:00
00:00:10
**:**:**
00:00:10
00:20:00
00:00:20
00:15:30
00:00:10
00:00:20
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
900C
N2(M)
N2(H)
N2(H)
N2(M)
N2(M)
N2(M)
N2(M)
N2(M)
N2(M),O2,N2(S)
N2(M)
N2(M)
N2(H)
N2(H)
N2(M)
N2(M)
STANDBY
DOOR DOWN
LOAD IN
SOFTWARE ALARM
DOOR UP
STABILISE
STABILISE
DOWNSTREAM VALVE OPEN
DEPOSITION
UPSTREAM VALVE CLOSED
DRIVE
DOOR DOWN
UNLOAD
SOFTWARE ALARM
DOOR UP
ARGON/NITROGEN
HYDROGEN CHLORIDE
9.0SLM
150.0sccm
OXYGEN
HIGH ARGON/NITROGEN
3.0SLM
40.0SLM
Furnace SPICS give the flowtube/DVM settings needed to achieve these values.
Note the set points for N2 and AR will be different due to the gases having
different densities (1:1.42 N2:AR).
PROCESS FLOW
1. Load wafers at 800degC at 4" per minute in O2.
2. Temperature stabilise at 800degC in O2 for 15mins.
3. Ramp to 1050degC in O2 (20mins).
4. Oxidise at 1050degC in O2 plus HCL(5%) to give the required oxide thickness.
STEP 8 TIME : 00:07:00 +/- 00:01:00 Hi/Lo N+
00:10:30 +/- 00:01:00 Saturated N+
P
P
P
P
P
P P
P
P
P
ACTUAL GAS FLOWS
- 5.7 L/MIN
P
P
P P
P : N2(M)
P P
P
P
O2 P - 27.0
P SCCM
P
P
N2(S)
- 0.47 L/MIN
P
P
5. Anneal wafers in Argon or Nitrogen for 60mins.
N2(H) - 18.0 L/MIN
Len pre potrebu SEI a.s. (For SEI a.s. use only)
P
P
6. Ramp to 800degC in Argon or Nitrogen (110mins).
P
P
P
P
P
P
7. Unload wafers at 800degC in Hi AR/N2 at 4"/min.
8. Allow wafers to cool in the ampoule with Hi AR/N2 on.
(This is done in two parts ampoule connected then disconnected from tube).
5/6
Len pre potrebu SEI a.s. (For SEI a.s. use only)
6/6