Transcript n-well - ECE "HUB"

CMOS CHIP DESIGN
Presented By
M.BHUVANESWARI
Complementary MOS fabrication
• CMOS Technology depends on using both N-Type and P-Type devices on the
same chip.
• The two main technologies to do this task are:
– P-Well (Will discuss the process steps involved with this technology)
• The substrate is N-Type. The N-Channel device is built into a P-Type well within the parent
N-Type substrate. The P-channel device is built directly on the substrate.
– N-Well
• The substrate is P-Type. The N-channel device is built directly on the substrate, while the Pchannel device is built into a N-type well within the parent P-Type substrate.
• Two more advanced technologies to do this task are:
Becoming more popular for sub-micron geometries where device performance and density must be
pushed beyond the limits of the conventional p & n-well CMOS processes.
– Twin Tub
• Both an N-Well and a P-Well are manufactured on a lightly doped N-type substrate.
– Silicon-on-Insulator (SOI) CMOS Process
• SOI allows the creation of independent, completely isolated nMOS and pMOS transistors
virtually side-by-side on an insulating substrate.
P-well on N-substrate
Steps :
• N-type substrate
• Oxidation, and mask (MASK 1) to create P-well (4-5m deep)
• P-well doping
P-well acts as substrate for nMOS devices.
The two areas are electrically isolated using thick field oxide (and often
isolation implants [not shown here])
SiO2
P-well
N-type substrate
Polysilicon Gate Formation
Steps :
• Remove p-well definition oxide
•
•
Grow thick field oxide
Pattern (MASK 2) to expose nMOS and pMOS active regions
•
•
Grow thin layer of SiO2 (~0.1m) gate oxide, over the entire chip surface
Deposit polysilicon on top of gate oxide to form gate structure
•
Pattern poly on gate oxide (MASK 3)
Thin gate oxide
(SiO2)
Thick field
oxide
pMOS active region N-type substrate
Gate (patterned
polysilicon on thin oxide)
P
nMOS active region
nMOS P+ Source/Drain difusion – self-aligned to Poly gate
Implant P+ nMOS S/D regions (MASK 4)
P+ implant/diffusion
P+ mask
Thick field
oxide
P
N-type substrate
pMOS N+ Source/Drain difusion – self-aligned to Poly gate
Implant N+ pMOS S/D regions (MASK 5 – often the inverse of MASK 4)
N+ implant/diffusion
N+ mask
P+
N+
N-type substrate
P
pMOS N+ Source/Drain difusion, contact holes & metallisation
Oxide and pattern for contact holes (MASK 6)
Deposit metal and pattern (MASK 7)
Passivation oxide and pattern bonding pads (MASK 8)
P-well acts as substrate for nMOS devices.
Two separate substrates : requires two separate substrate connections
Definition of substrate connection areas can be included in MASK 4/MASK5
Vin
N+ for N-substrate
contact)
Vout
Vdd
Vss
P
P+
P channel
Device
N-type substrate
N+
N channel
Device
P+ (for P-substrate
contact)
CMOS N-well process
An N-well process is also widely used
Vin
P+ for P-substrate
Vdd
contact)
N+
Vout
N channel
Device
P-type substrate
P+
Vss
N-well
P channel
Device
N+ (for Nsubstrate contact)
MOS Transistor
0 Volts
S (Source)
0 Volts
G (Gate)
VDD Volts
D (D rain)
n-Channel Transistor: OFF - no D-to-S Cur rent
Channel
length
Substrate
Location of
conducting
layer
MOS Transistor
0 Volts
S (Source)
V D D Volts
G (Gate)
V D D Volts
D (D rain)
n-Channel Transistor: ON - D -to-S Current
Channel
length
Substrate
Location of
conducting
layer
Switch Models for MOS Transistors
• n-Channel – Normally Open (NO) Switch Contact
D
G
X
X:
•
•
X:X
S
Symbol
Switch M odel:
Simplifed
Switch M odel
• p-Channel – Normally Closed (NC) Switch Contact
S
G
X
•
D
Symbol
X:
•
•
Switch M odel
X:X
Simplified
Switch M odel
Circuits of Switch Models
• Series
X: X
X A ND Y
Y: Y
Series
• Parallel
X: X
Y: Y X OR Y
Parallel
Fully-Complementary CMOS Circuit
• Circuit structure for fully-complementary
CMOS gate
logic 1 +V
•
•
•
F using
p-type
transistors
(NC switches)
•
X1
X2
•
••
•
Xn
•
•
•
•
•
F using
n-type
transistors
(NO switches)
logic 0
General Structure
F
CMOS Circuit Design Example
• Find a CMOS gate with the following function:
F = X Z + Y Z = (X + Y)Z
• Beginning with F0, and using F
F0 Circuit: F = X Y + Z
• The switch model circuit in terms of NO
switches:
X: X
Y: Y
Z: Z
CMOS Circuit Design Example
• The switch model circuit for F1 in terms of NC
contacts is the dual of the switch model circuit for F0:
X : X Y: Y
Z: Z
• The function for this circuit is:
F1 Circuit: F = (X + Y) Z
which is the correct F.
CMOS Circuit Design Example
• Replacing the
switch models
with CMOS
transistors;
note input
Z must be
used.
CMOS Inverter
A
0
1
Y
VDD
A
A
Y
Y
GND
CMOS Inverter
A
0
1
Y
VDD
OFF
0
A=1
Y=0
ON
A
Y
GND
CMOS Inverter
A
0
1
Y
1
0
VDD
ON
A=0
Y=1
OFF
A
Y
GND
CMOS NAND Gate
A
0
0
1
1
B
0
1
0
1
Y
Y
A
B
CMOS NAND Gate
A
0
0
1
1
B
0
1
0
1
Y
1
ON
ON
Y=1
A=0
B=0
OFF
OFF
CMOS NAND Gate
A
0
0
1
1
B
0
1
0
1
Y
1
1
OFF
ON
Y=1
A=0
B=1
OFF
ON
CMOS NAND Gate
A
0
0
1
1
B
0
1
0
1
Y
1
1
1
ON
A=1
B=0
OFF
Y=1
ON
OFF
CMOS NAND Gate
A
0
0
1
1
B
0
1
0
1
Y
1
1
1
0
OFF
A=1
B=1
OFF
Y=0
ON
ON
CMOS NOR Gate
A
0
0
1
1
B
0
1
0
1
Y
1
0
0
0
A
B
Y
3-input NAND Gate
• Y pulls low if ALL inputs are 1
• Y pulls high if ANY input is 0
Y
A
B
C
Inverter Cross-section
• Typically use p-type substrate for nMOS
transistor
– Requires n-well for body of pMOS transistors
A
GND
– Several alternatives:
SOI, twin-tub,V etc.
Y
DD
SiO2
n+ diffusion
n+
n+
p+
p+
n well
p substrate
nMOS transistor
p+ diffusion
polysilicon
metal1
pMOS transistor
Well and Substrate Taps
• Substrate must be tied to GND and n-well to
VDD
• Metal to lightly-doped semiconductor forms
A
poor connection called
Shottky Diode
GND
V
Y
• Use heavily doped well and substrate contacts /
taps
p+
n+
n+
p+
p+
n+
DD
n well
p substrate
substrate tap
well tap
Inverter Mask Set
• Transistors and wires are defined by masks
• Cross-section taken along dashed line
A
Y
GND
VDD
nMOS transistor
substrate tap
pMOS transistor
well tap
Detailed Mask Views
• Six masks
–
–
–
–
–
–
n-well
Polysilicon
n+ diffusion
p+ diffusion
Contact
Metal
n well
Polysilicon
n+ Diffusion
p+ Diffusion
Contact
Metal
Fabrication Steps
• Start with blank wafer
• Build inverter from the bottom up
• First step will be to form the n-well
– Cover wafer with protective layer of SiO2
(oxide)
– Remove layer where n-well should be built
– Implant or diffuse n dopants into exposed
wafer
– Strip off SiO2
p substrate
Oxidation
• Grow SiO2 on top of Si wafer
– 900 – 1200 C with H2O or O2 in oxidation furnace
SiO2
p substrate
Photoresist
• Spin on photoresist
– Photoresist is a light-sensitive organic polymer
– Softens where exposed to light
Photoresist
SiO2
p substrate
Lithography
• Expose photoresist through n-well mask
• Strip off exposed photoresist
Photoresist
SiO2
p substrate
Etch
• Etch oxide with hydrofluoric acid (HF)
– Seeps through skin and eats bone; nasty stuff!!!
• Only attacks oxide where resist has been
exposed
Photoresist
SiO2
p substrate
Strip Photoresist
• Strip off remaining photoresist
– Use mixture of acids called piranah etch
• Necessary so resist doesn’t melt in next step
SiO2
p substrate
n-well
• n-well is formed with diffusion or ion
implantation
• Diffusion
– Place wafer in furnace with arsenic gas
– Heat until As atoms diffuse into exposed Si
• Ion Implanatation
– Blast wafer with beam of As ions
n well
– Ions blocked by SiO2, only enter
exposed Si
SiO2
Strip Oxide
• Strip off the remaining oxide using HF
• Back to bare wafer with n-well
• Subsequent steps involve similar series of steps
n well
p substrate
Polysilicon
• Deposit very thin layer of gate oxide
– < 20 Å (6-7 atomic layers)
• Chemical Vapor Deposition (CVD) of silicon
layer
– Place wafer in furnace with Silane gas (SiH4)
– Forms many small crystals called polysilicon
– Heavily doped to be good conductor
n well
p substrate
Polysilicon
Thin gate oxide
Polysilicon Patterning
• Use same lithography process to pattern
polysilicon
Polysilicon
Polysilicon
Thin gate oxide
n well
p substrate
Self-Aligned Process
• Use oxide and masking to expose where n+
dopants should be diffused or implanted
• N-diffusion forms nMOS source, drain, and nwell contact
n well
p substrate
N-diffusion
• Pattern oxide and form n+ regions
• Self-aligned process where gate blocks diffusion
• Polysilicon is better than metal for self-aligned
gates because it doesn’t melt during later
processing
n+ Diffusion
n well
p substrate
N-diffusion
• Historically dopants were diffused
• Usually ion implantation today
• But regions are still called diffusion
n+
n+
n+
n well
p substrate
N-diffusion
• Strip off oxide to complete patterning step
n+
n+
n+
n well
p substrate
P-Diffusion
• Similar set of steps form p+ diffusion regions
for pMOS source and drain and substrate
contact
p+ Diffusion
p+
n+
n+
p+
p+
n well
p substrate
n+
Contacts
• Now we need to wire together the devices
• Cover chip with thick field oxide
• Etch oxide where contact cuts are needed
Contact
Thick field oxide
p+
n+
n+
p+
p+
n well
p substrate
n+
Metallization
• Sputter on aluminum over whole wafer
• Pattern to remove excess metal, leaving wires
Metal
Metal
Thick field oxide
p+
n+
n+
p+
p+
n well
p substrate
n+
Twin – tub Process
• Process sequence
–
–
–
–
–
a. Tub formation
b. Thin-Oxide construction
c. Source & drain implantations
d. Contact cut definition
e. Metallization
Processing Steps:
• Substrate Selection
• Anisotropic etch:
• From P- island for N-Device:
• From N-island for P-device:
• Growth & oxide through thermal oxidation:
• Deposit Doped Silicon:
• Etch polysilicon:
• N-Implantation for Source & Drain:
• P-Implantation:
• Grow phosphorus glass
• Etch glass to form contact cut
• Evaporating Alumini
Balanced performance of n and p
devices can be constructed
SILICON ON INSULATOR
•
•
•
•
•
•
What is SOI?
Characteristics of SOI
Fabrication methods
Basic categorization
Electrical anomalies
Advantages and Disadvantages
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What is SOI?
-SOI – Silicon-onInsulator
-Si layer on top of an
insulator layer to
build active devices
and circuits.
-The insulator layer is
usually made of SiO2
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Characteristics
Include:
- High speed
- Low power
- High device density
- Easier device isolation structure
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SOI Fabrication
Processes
-SOS – Silicon-on-Sapphire
-SIMOX – Separation by
Implantation of Oxygen
-ZMR – Zone melting and
recrystallization
-BESOI – Bond and Etchback SOI
-Smart-cut SOI Technology
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Categorization
-Categorization based on the
thickness of the silicon film.
-The first is a partially-depleted
device and the latter is a fullydepleted device.
-Each has its own advantages
and disadvantages.
-PD device threshold voltage is
insensitive to film thickness.
-FD device has reduced short
channel and narrow channel
effects.
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Electrical anomalies
Floating-body effect:
-Usually seen in PartiallyDepleted devices.
- As shown in figure, the
MOS structure is
accompanied by a
parasitic bipolar device in
parallel.
-The base of this device is
‘floating’.
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Electrical anomalies
Kink Effect:
-Sudden discontinuity in drain
current.
-Seen when the device is biased
in the saturation region.
-The bipolar device is turned on.
Solution:
-Provide a body contact for the
device.
- Use FD devices.
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Electrical anomalies
•
-
Self-heating effect:
Thermal insulation is provided by the oxide surface.
Heat dissipation is not efficient.
This happens only when there is logic switching in the device.
• In fully-depleted devices, the threshold voltage is sensitive to the
thickness of the silicon film.
• Manufacturing process is comparatively difficult.
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Advantages of SOI
• Suitable for high-energy radiation environments.
• Parasitic capacitances of SOI devices are much
smaller.
• No latch-up.
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Advantages
Easier device
isolation
-
-High device
density
-Easier scale-down
of threshold
voltage.
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Uses in digital and analog
circuits
• A combination of FD and PD devices are used
in digital circuitry.
• Superior capabilities of SOI CMOS technology
– usage in memory cell implementation.
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Uses in digital and analog
circuits
• SOI technology is useful for implementing highspeed op-amps – given its low Vt.
• Higher transconductance (especially of FD)
implies higher gain.
• Lower power consumption compared to bulk
devices at low current level.
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UNIVERSITY OF CALIFORNIA, IRVINE
Disadvantages
• Major bottleneck is high manufacturing costs of
the wafer.
• Floating-body effects impede extensive usage of
SOI.
• Device integration – dopant reaction with the
oxide surface.
• Electrical differences between and SOI nad bulk
devices.
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Conclusion
• Due to its characteristics, SOI is fast becoming a
standard in IC fabrication.
• Several companies have taken up SOI
manufacturing.
• High-volume production of SOI is yet to
become common.
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Interconnect
(i).Metal Interconnect
• Polysilicon & diffusion
• (N+,P+)
Lay out Diagram:
• (ii).Poly Interconnect:
• (iii).Local
• Interconnect:
Circuit Elements:
Latchup
problem:
•
•
Latchup : Shorting of VDD and Vss lines → Chip breakdown
Latchup Equivalent Circuit:
•
•
•
•
Vertical : pnp
p = source/drain of p device (Emitter)
n = n-well (Base)
p = p-substrate (Collector)
Lateral : npn
• n = source/drain of n device (Emitter)
• p= p-substrate (Base)
• n= n-well (Collector)
•
•
Rsubstrate, Rwell
Parasitic devices and resistors
• Latch up Problem:
• Equivalent Circuits:
• Characteristics curve:
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