Transcript T28-B
HDPCVD技術資料 1. System Maker : Applied Materials.Inc 2. System Model : Centura 5200 3. Serial Number : 35605-03 4. Mainframe : Ultima HDP MF w/Multi-Slot 5. Load Lock : Nerrow Body 6. Wafer Size : 200mm SNNF 7. Chamber Type & Quantity : Chamber : A =Ultima Plus Chamber : D = DxZ 8. Other Chambers : Ch#E (MSCD) Ch#F Orienter 9. RF Generator : ETO Generator, RFG-2000-2V 10. RPC : MKS - AX7670 11. Robot Type : HP Robot 12. Turbo Pump : EBARA – ET1600W Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Depo Rate Recipe D/T T/V step RF (TOP) RF (SIDE) RF (BIAS) Temp AR AR-T O2 SIH4 SIH4-T HDP-1.0K-R 9.5” 1100 1000w 3400w 2900w 400℃ 120 16 133 62 10.6 Item 1 2 3 4 5 6 7 8 9 Thickness 1114 1025 1043 1025 1010 1033 1094 1007 1060 AVG Range Unif.% Depo rate. N GOF 1046Å 107 Å 3.533 6600Å/min 1.452 98.86% Results Chamber A 高密度電漿 製程腔體 Dep. rate Real required 6600 Å/min >500 Å/min PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Thickness [ Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å) ] PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ within/wafer U% Chamber “A” HDP PE-OX-1.0K, < 400 Deg Item 1 2 3 4 5 6 7 8 9 Thickness 1114 1025 1043 1025 1010 1033 1094 1007 1060 AVG Range Unif.% Depo rate. N GOF 1046Å 107 Å 3.533 6600Å/min 1.452 98.86% Results Chamber A 高密度電漿 製程腔體 Real required 3.533% ＜4% PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1.0K-R, < 400 Deg ) Slot Recipe Min Max Range AVG U/F % N value 1st HDP-1.0K-R 987 1085 98 1037 3.71 1.466 25th HDP-1.0K-R 1003 1102 98 1050 3.58 1.466 26th HDP-1.0K-R 997 1097 100 1046 3.59 1.466 50th HDP-1.0K-R 998 1095 96 1046 4.56 1.465 Results Chamber A 高密度電漿 製程腔體 Real required 3.86% ＜4% PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ ‘N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1.465 ± 0.015 ) PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Wafer Temperature Results Chamber A 高密度電漿 製程腔體 Real required 399℃ ＜400℃ PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Depo Rate Chamber “A” HDP ( HDP-1.0K-R, < 600℃ ± 50℃ ) Recipe D/T T/V step RF (TOP) RF (SIDE) RF (BIAS) Temp AR AR-T O2 SIH4 SIH4-T HDP-1.0K-RT 9.5” 1100 1000w 3400w 2900w 600℃ 120 16 133 62 10.6 Item Thickness 1 2 3 4 5 6 7 8 9 1103 1015 1028 1008 982 1022 1089 993 1033 AVG Range Unif.% Depo rate. N GOF 1030Å 120 Å 3.949 6505Å/min 1.470 99.86% Results Chamber A 高密度電漿 製程腔體 Dep. rate Real required 6505 Å/min >500 Å/min PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Thickness 7-2-2. Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å) PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ within/wafer U% Chamber “A” HDP ( HDP-1.0K-R, 600℃ ± 50℃ ) Item Thickness 1 2 3 4 5 6 7 8 9 1103 1015 1028 1008 982 1022 1089 993 1033 AVG Range Unif.% Depo rate. N GOF 1030Å 120 Å 3.949 6505Å/min 1.470 99.86% Results Chamber A 高密度電漿 製程腔體 Real required 3.949% ＜4% PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1.0K-R, 600℃ ± 50℃ ) Slot Recipe Min Max Range AVG U/F % N value 1st HDP-1.0K-RT 1001 1119 118 1051 3.98 1.465 25th HDP-1.0K-RT 1006 1102 96 1053 3.59 1.465 26th HDP-1.0K-RT 1004 1101 96 1052 3.53 1.465 50th HDP-1.0K-RT 1000 1100 99 1049 3.38 1.465 Results Chamber A 高密度電漿 製程腔體 Real required 3.62% ＜4% PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1.465 ± 0.015 ) PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Wafer Temperature Results Chamber A 高密度電漿 製程腔體 Real required 597℃ 600℃± 50 ℃ Chamber “D” DxZ (SiO2 1.0K) Depo Rate Chamber “D” DXZ ( PE-OX-1.0K ) Recipe D/T Servo HFRF Temp Spacing SIH4 N2O PE-OX-1.0K-R 8.7” 2.7 Torr 270w 400℃ 550mils 68 2000 Item 1 2 3 4 5 6 7 8 9 Thickness 1011 1016 1024 1012 1031 1011 1022 1012 1065 AVG Range Unif.% Depo rate N GOF 1023 Å 54 Å 1.689 7055Å/min 1.461 99.33 % Results Chamber D 高沈積率 製程腔體 Real required 7055Å/min >2000Å/min Chamber “D” DxZ (SiO2 1.0K) Thickness Chamber “D” DXZ ( PE-OX-1.0K ) Results Chamber D 高沈積率 製程腔體 Real required 1023.3A 1000±50A Chamber “D” DxZ (SiO2 1.0K) within/wafer U%： Chamber “D” DXZ ( PE-OX-1.0K ) Item 1 2 3 4 5 6 7 8 9 Thickness 1011 1016 1024 1012 1031 1011 1022 1012 1065 AVG Range Unif.% Depo rate N GOF 1023 Å 54 Å 1.689 7055Å/min 1.461 99.33 % Results Chamber D 高沈積率 製程腔體 Real required 7055Å/min >2000Å/min Chamber “D” DxZ (SiO2 1.0K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-OX-1.0K ) Slot Recipe Min Max Range AVG U/F % N value 1st PEOX-1.0K-R 1003 1081 78 1026 1.98 1.456 25th PEOX-1.0K-R 1003 1087 83 1030 2.47 1.456 26th PEOX-1.0K-R 1001 1104 102 1035 2.98 1.456 50th PEOX-1.0K-R 990 1040 49 1003 1.53 1.456 Results Chamber D 高沈積率 製程腔體 Real required 2.24% ＜4% Chamber “D” DxZ (SiO2 1.0K) ‘N’ Value Chamber “D” DXZ, SiO2 ( ‘N’ Value Spec : 1.465 ± 0.015 ) Results Chamber D 高沈積率 製程腔體 Real required 1.4611 1.465 ± 0.015 Chamber “D” DxZ (SiO2 1.0K) Wafer Temperature Results Chamber D 高沈積率 製程腔體 Real required 402.1℃ 400± 3 ℃ Chamber “D” DxZ (PE-SiN 1.0K) Depo Rate Chamber “D” DXZ ( PE-NIT-1.0K-R ) Recipe D/T Servo HFRF Temp Spacing SIH4 N2 NH3 PE-NIT-1.0K-R 7.1” 4.9Torr 620w 400℃ 700mils 220 4000 120 Item Thickness 1 2 3 4 5 6 7 8 9 1012 999 1004 1020 1027 1006 1018 990 1010 AVG Range Unif.% Depo rate N GOF 1010 37 1.13 8552Å/min 2.02 99.8 Results Chamber D 高沈積率 製程腔體 Real required 8552Å/min >2000Å/min Chamber “D” DxZ (PE-SiN 1.0K) Thickness Chamber “D” DxZ Si3N4( Thickness Spec : 1000Å ± 50Å ) Results Chamber D 高沈積率 製程腔體 Real required 1010Å 1000Å ± 50Å Chamber “D” DxZ (PE-SiN 1.0K) within/wafer U%： Chamber “D” DXZ ( PE-NIT-1.0K-R ) Item 1 2 3 4 5 6 7 8 9 Thickness 1012 999 1004 1020 1027 1006 1018 990 1010 AVG Range Unif.% Depo rate N GOF 1010 37 1.139 8552Å/min 2.02 99.56 % Results Chamber D 高沈積率 製程腔體 Real required 1.139% ＜4% Chamber “D” DxZ (PE-SiN 1.0K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-NIT-1.0K-R ) Slot Recipe Min Max Range AVG U/F % N value 1st PE-SIN-1.0K-R 1024 1051 26 1040 0.87 2.01 25th PE-SIN-1.0K-R 1026 1056 29 1044 1.00 2.00 26th PE-SIN-1.0K-R 1030 1055 24 1045 0.85 2.00 50th PE-SIN-1.0K-R 1028 1063 35 1046 1.12 2.00 Results Chamber D 高沈積率 製程腔體 Real required 0.96% ＜4% Chamber “D” DxZ (PE-SiN 1.0K) ‘N’ Value Chamber “D” DxZ ( ‘N’ Value Spec : 2.02 ± 0.03 ) Results Chamber D 高沈積率 製程腔體 Real required 2.0205 2.02 ± 0.03 Chamber “D” DxZ (PE-SiN 1.0K) Wafer Temperature Results Chamber D 高沈積率 製程腔體 Real required 399.4℃ 400℃± 3 ℃ C/V(K/value)-1 高密度電漿製程腔體 HDP-LF-CV400 -7 2.0x10 7.00E-11 k for HDP400-Oxide ~ 3.99 HDP 400 0.0 6.50E-11 -7 -2.0x10 6.00E-11 -7 I(A) -4.0x10 5.50E-11 -7 -6.0x10 -7 -8.0x10 5.00E-11 -6 -1.0x10 4.50E-11 -6 -1.2x10 -10 4.00E-11 -2.50E+01 -2.00E+01 -1.50E+01 -1.00E+01 -5.00E+00 0.00E+00 5.00E+00 1.00E+01 1.50E+01 2.00E+01 -5 0 2.50E+01 5 10 E (MV/cm) HDP-LF-CV600 4.00E-008 HDP600 7.50E-11 k for HDP600-Oxide ~ 4.16 2.00E-008 7.00E-11 0.00E+000 6.50E-11 -2.00E-008 I(A) 6.00E-11 5.50E-11 -4.00E-008 5.00E-11 -6.00E-008 4.50E-11 -8.00E-008 4.00E-11 -3.50E+01 -3.00E+01 -2.50E+01 -2.00E+01 -1.50E+01 -1.00E+01 -5.00E+00 -1.00E-007 0.00E+00 5.00E+00 1.00E+01 1.50E+01 2.00E+01 2.50E+01 -10 -5 0 5 10 E (MV/cm) Results Results Chamber A 高密度電漿 製程腔體 Real required 3.99 (400℃) 3.9~4.2 (SiOx) 4.16 (600℃) Real Chamber A 高密度電漿 製程腔體 PASS (400℃) PASS (600℃) required >5MV/cm2 (SiOx) C/V(K/value)-2 高沈積率製程腔體 5.00E-009 k for PE-Oxide ~ 4.13 DxZ SiOx 0.00E+000 I(A) -5.00E-009 -1.00E-008 -1.50E-008 -2.00E-008 -10 -5 0 5 10 E (MV/cm) -3 3.0x10 DiX-SiN k for PE-SiN ~ 7.88 0.0 -3 I(A) -3.0x10 -3 -6.0x10 -3 -9.0x10 -2 -1.2x10 -10 -5 0 5 10 E (MV/cm) Results Results Chamber D 高沈積率 製程腔體 Real required 4.13 3.9~4.2(SiOx) 7.88 7.0~9.0(SiNx) Chamber D 高沈積率 製程腔體 Real required PASS > 5MV/cm2 (SiOx) PASS > 5MV/cm2 (SiNx) 填洞能力-1(Gap Fill,Via) Results Chamber A 高密度電漿 製程腔體 Real required No VOID No VOID