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Jhen-Yu Yang
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Outline
• Introduction
• Experiment
• Results and discussion
• Conclusion
• References
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Introduction
• In this paper, we report a new type of photo
detector: a planar Metal-Oxide-Semiconductor
(MOS) diode fabricated on a SOI substrate which
exhibits record sensitivities in a very wide spectral
range, from 245nm to 880 nm.
• The detector we introduce uses a relatively thick
double insulator SiO2-HfO2 stack (in contrast to
standard MOS structures having only a thin
tunneling SiO2 insulator), which requires a voltage
stress process in order to conduct when illuminated.
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Experiment
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Results and discussion
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Results and discussion
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Results and discussion
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Results and discussion
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Results and discussion
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Conclusion
• The measured responsively in the UV and visible
wavelength ranges is several times larger than that
of all reported SOI based photo detectors and is
similar to the responsivily obtained for wide band
gap semiconductors.
• However, the present detectors are superior in terms
of their very wide spectral response. Further
improvement can be obtained by optimization of the
insulator stack sub-layer
thickness and
implementation of a wider bandwidth ARC that is
effective in the UV spectral region.
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References
• V. Mikhelashvili, D. Cristea, B. Meyler, S. Yofis, Y.
Shneider, G. Atiya, T. Cohen-Hyams, Y.
Kauffmann, W. D. Kaplan, and G. Eisenstein, “A
highly sensitive broadband planar metal-oxide
semiconductor photo detector fabricated on a
silicon-on-insulator substrate, ” J. Appl. Phys. 116,
074513 (2014)
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