Transcript Properties of Nanodomain Polymer Derived SiCO Dongjoon Ahn Advisor: Prof. Rishi Raj

Properties of Nanodomain
Polymer Derived SiCO
Dongjoon Ahn
([email protected])
University of Colorado at Boulder
Department of Mechanical Engineering
Advisor: Prof. Rishi Raj
:: Background & Objective
• Problems facing current in the Microelectronics
Circuit
– Signal Propagation Delay
– Cross-talk
– Power Consumption
• The best way to reduce the Limitation
– Use low dielectric constant material
• SiCO as a candidate
– Low dielectric constant < 2.0
– Thermal and Mechanical stability at high temp.
• Find the low dielectric constant material
MCEN 5208-Introduction to Research
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:: Research Tasks
Current work for introduction to research
• Measure the dielectric properties of SiCO thin films
– Thickness
– Capacitance
– Leakage Current
Future work
• Apply the SiCO to actual devices
– Low Dielectric Constant
– Higher Thermal & Mechanical Stability
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:: Methodology (Fabrication)
Process
Making
Precursor
Detail
Step
Coating
&
Patternin
g
Heat
Treatment
Gold
Coating
Spin-Coating
Cross-linking
Sputtering
UV Lithography
&
Polymerization
Densification
Measurement
Measuring
Dielectric
Property
Pyrolysis
Annealing
Check
Point
Out put
• Chemical
Composition
•RPM of Spinner
•Wave Length
•Temperature
•Liquid
Precursor
•UV Cured &
Patterned
Gel Polymer
•ILD Material
on Si wafer
MCEN 5208-Introduction to Research
•Thickness
•Capacitance
•Leakage Current
•Interconnection •Dielectric
Si/Insulator/metal Constant
configuration
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:: Methodology (Measurement)
<Si/Insulator/metal configuration>
Gold
Thickness Measurement
SiCO
(by Optical Ellipsometer)
Si Wafer
<Detail Structure>
Apparatus of Measurement
Thickness: Optical Ellipsometry (AutoEL®-II, RUDOLPH RESEARCH)
Capacitance & Leakage Current: Impedance Spectroscopy
(HP 4192A LF IMPEDANCE ANALYZER)
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