Transcript Enabling Nanotechnology JEOL JBX-9300FS Electron Beam Lithography System Georgia Tech

JEOL JBX-9300FS
Electron Beam Lithography System
Georgia Tech
Microelectronics Research Center
Enabling Nanotechnology
8/16/06
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Nanoimprint Embossing Stamps
Researcher: Andrew Ballinger*, Devin Brown**
*University of North Texas, **Georgia Tech Microelectronics Research Center
NIL
Plasma Etch
EBL
HSQ resist
20 um
e-
e-
e-
e-
stamp
resist trim
Silicon substrate
spin coat
3.5nm gap
oxide
7nm
e-
PMMA resist
Silicon substrate
10 MINUTES!! / REUSABLE
exposure
10 HOURS!!
develop
11nm
8/16/06
silicon etch
imprint
resist strip
resist strip
80nm line
70nm space
30nm
diameter
150nm line
80nm line
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Nanopatterned Protein Arrays
Graduate Student: Sean Coyer, PI: Andres Garcia
Biomedical Engineering, Georgia Tech
pattern
EBL + metal lift-off
protein
500 nm
adhesive protein
protein resistant group
Au
PR
250 nm
Si
5 mm
E-beam Lithography is used to
produce patterned arrays presenting
adhesive protein islands within nonfouling background to analyze cell
adhesion.
100 mm
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cells
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Nanoscale Resonator
Researcher: Michael Kranz*, Mark Allen**
*Stanley Associates, **Georgia Tech Electrical Engineering
20 um
3.5nm gap
An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for
signals in the 100's to 1000's of MHz. A two-step hybrid lithographic approach allowed the large features
of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional
optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia
Tech's JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon
dioxide film that served as a release layer during a standard HF oxide etch. Patterning was
accomplished through first exposing a PMMA electron beam resist and subsequently transferring that
pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon.
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Chemically Amplified Resist for Nanoscale Patterns
Researcher: Cheng-Tsung Lee, Cliff Henderson
Georgia Tech Chemical and Biological Engineering
Patterns on nitride membrane
20 um
3.5nm gap
Film thickness: 75nm
Shot pitch: 10nm
Current: 2nA;
Dose: 120 uC/cm2
30 nm half pitch pattern on novel EUV resist

High acceleration voltage (100kV) electron-beam lithography on ultra-thin
silicon nitride substrate provide the excellent tool in determining the intrinsic
resolution of the novel chemically amplified resists.

Novel EUV resist shows the inherent resolution in patterning 30 nm half pitch
line/sapce array with low CD variation and LER.
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CPP-GMR spin valves
Researcher: Cristian Papusoi, Su Gupta
University of Alabama at Tuscaloosa
Ta(2.5)/Cr(5)/CoPt(5)/CoFe(0.7)/Cu(2.5)/CoFe(1)/NiFe(3)/Ta(5)
1.0
0.5
M/MS
20 um
0.0
3.5nm gap
-0.5
Top lead
-1.0
-4
-3
-2
-1
0
1
2
3
4
H (kOe)
Ta(2.5)/Cr(5)/CoPt(5)/CoFe(0.7)/Cu(2.5)/CoFe(1)/NiFe(3)/Ta(5)
5
Bottom lead
field increase
field decrease
Rinit = 6.74158 
Contact hole (100
nm diameter)
SV pillar
(stack) 9 mm
diameter
MR (%)
4
3
2
1
0
-4
-2
0
2
4
H (kOe)
Giant MagnetoResistive (GMR) devices are potential candidates for magnetic read heads.
The Current Perpendicular to the Plane (CPP) geometry, when the current is flowing
perpendicular to the film plane, is expected to deliver the maximum sensitivity (GMR ratio).
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Advanced Dielectrics and Lithography for Interconnects
Roey Shaviv, Novellus
Devin Brown, Georgia Tech
ZEP520A resist
Dielectric test
structure
SiO2
Silicon
substrate
Research is being done on advanced dielectric materials for creating 40 nm
and below interconnect lines to meet ITRS objectives for the 32 nm
technology node.
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SOI Photonic Crystals
Researcher: John Blair*, Stephen Ralph**
*Georgia Tech Material Science, **Electrical Engineering
Resonant cavity photonic crystal pattern that resonate at 1.55um wavelength,
infra-red.
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8
Optical Diffractive Element
Researcher: Anonymous External Customer, Devin Brown
Georgia Tech
70nm diameter holes in 80nm Aluminum on quartz
substrate using lift-off technique.
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Nanometer Gaps
Researcher: Raghunath Murali, Farhana Zaman
Georgia Tech Microelectronics Research Center
20 um
3.5nm gap
13.2 nm gap
•
•
•
Si substrate, Resist : 47 nm thick PMMA
E-beam lithography with 2 nA current, 100 kV acc. voltage
Metal liftoff process with 5 nm Cr adhesion layer and 10 nm Au
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Nanoresonator
Researcher: John Perng, Farrokh Ayazi
Georgia Tech Electrical Engineering
37nm-wide
electrode gap
capacitive
block
resonator
• High frequency MEMS resonator are used in many different applications,
such as RF oscillator, on-chip frequency reference, biosensor, etc.
• Capacitive-based resonator requires small electrode gap to increase signal to
noise ratio and to lower motional impedance
• The goal of this project is to characterize the limit of nano trench etching in Si
(10nm-wide, max depth?) and produce working device with sub-100nm gap
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Negative Index Photonic Crystal Superprisms
Researcher: Babak Momeni, Ali Adibi
Georgia Tech Electrical Engineering
• beams of different wavelengths propagate in
different directions inside the PC (superprism
effect)
• negative refraction of the separated channels
results in their separation from undesired light
(noise, scattering, unwanted polarization, and
out-of-range wavelengths) in the incident beam,
thus reducing the overall noise level
• four channels are separated in this device
with a wavelength spacing of 8nm
8/16/06
12
Cancer Diagnosis Bio-Assay Nano Cantilever Array
Researcher: Kevin Klein, Jiantao Zheng, Suresh Sitaraman
Georgia Tech Mechanical Engineering
20nm
cantilevers
• nanocantilevers can be individually coated with specific reagents to
detect and measure the presence of particular antigens and/or
complementary DNA sequences with a smaller sample size and at much
earlier stages of disease progression compared to current medical
diagnostic technologies
• high-throughput detection of proteins, DNA, and RNA for a broad range
of applications ranging from disease diagnosis to biological weapons
detection
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13
Ultra Low K Damascene Process Extended Air Gaps
Researcher: Seongho Park, Paul Kohl
Georgia Tech Chemical & Biomolecular Engineering
CMP stop layer
Spin-coated S/P
resist pattern
PECVD SiO2
Si-wafer
Si-wafer
RIE etching of SiO2, PR is etch mask.
Deposition of the interlevel dielectric
PECVD SiO2
Interlevel
Spin-coated S/P
Wet etching of Cu
PECVD SiO2
CMP stop layer
Spin-coated S/P
resist pattern
PECVD SiO2
PECVD SiO2
Si-wafer
Si-wafer
Decomposition of S/P
Si-wafer
resist stripping and spin coating of S/P
Interlevel
Intralevel Cu
CMP
Spin-coated S/P
Cu layer
metal barrier layer
Spin-coated S/P
PECVD SiO2
Si-wafer
deposition of CMP stop layer
and resist patterning (e-beam lithography)
resist pattern
CMP stop layer
Spin-coated S/P
Si-wafer
PECVD SiO2
PECVD SiO2
Si-wafer
Electroplating of Cu or CVD Cu
metal barrier layer
Spin-coated S/P
PECVD SiO2
PECVD SiO2
Si-wafer
Si-wafer
RIE etching of CMP stop layer
resist pattern
CMP stop layer
Spin-coated S/P
PECVD SiO2
Deposition of metal barrier layer
Deposition of Cu seed layer
CMP stop layer
Spin-coated S/P
Si-wafer
PECVD SiO2
Si-wafer
Stripping e-beam resist and RIE for S/P
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Advanced Copper Interconnection and Low-k Dielectric
Researcher: *Dean Denning, **Devin Brown
*SEMATECH, **Georgia Tech
30 nm lines
Research on advanced copper interconnects and low-k dielectric material is being carried out at
Georgia Tech, with interconnect line widths down to 30 nm to address needs and challenges
presented by the International Technology Roadmap for Semiconductors (ITRS). SEMATECH
members include Infineon, AMD, Intel, HP, IBM, Samsung, TI and Freescale.
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Carbon Nanotube Pattern Control
Researcher: Devin Brown, Azad Naeemi
Georgia Tech Microelectronics Research Center
< 20nm pattern alignment !
Research is being conducted to study the effects of electric field during carbon nanotube growth.
The image above shows 100nm diameter Iron catalyst islands aligned to less than 20nm on top of
100nm Molybdenum electrode lines.
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Single Molecule Detection
Graduate Student: Chris Tabor, PI: Mostafa A. El-Sayed
School of Chemistry, Georgia Tech
LASER
Detector
7nm gap
25000
Y Axis Title
20000
15000
10000
5000
0
500
1000
1500
X Axis Title
Raman “Fingerprint”
Hazardous substances such as Cyanide and Anthrax could be confidently and efficiently detected below
the infectious concentration. As the particle separation increases the detection limit increases
exponentially. It is thus imperative that the particle gaps be on the order of a few nanometers and is why
EBL is so important to the fabrication technique.
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Graphite Nanotransistor
Graduate Student: Zhiming Song, PI: Walt De Heer
School of Physics, Georgia Tech
20nm
Nanowire is formed in a thin graphite layer to produce a
transistor similar to carbon nanotube.
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Silicon Photonic Crystals
Graduate Student: Tsuyoshi Yamashita, PI: Chris Summers
Materials Science & Engineering, Georgia Tech
Photonic crystal devices provide researchers with numerous properties unavailable
in conventional optical materials such as the negative index of refraction effect.
8/16/06
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Narrow Isolated Line Resolution
Devin K. Brown, Raghunath Murali
Microelectronics Research Center, Georgia Tech
Best result to
date (2/16/05):
6.5nm line
Isolated line in negative HSQ e-beam resist.
8/16/06
20
Narrow Dense Lines Resolution
Raghunath Murali, Devin K. Brown
Microelectronics Research Center, Georgia Tech
Dense lines in positive ZEP520 e-beam resist.
8/16/06
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Electroluminescence of Gold Nanoparticles
Graduate Student: Wonsang Au, PI: Robert M. Dickson
School of Chemistry and Biochemistry, Georgia Tech
SiO2
Au
Au
300 nm
30 nm
40 nm
SiO2
Exhibiting characteristic single-molecule behavior, these individual room-temperature
molecules exhibit extreme electroluminescence enhancements (>104 vs. bulk and dc
excitation on a per molecule basis) when excited with specific ac frequencies.
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Georgia Research Alliance
Graduate Student: George P. Burdell
School of Engineering, Georgia Tech
13nm
13nm line width lettering in negative HSQ EBL resist.
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Georgia Tech Buzz Mascot
Graduate Student: George P. Burdell
School of Engineering, Georgia Tech
26nm feature
26nm features in
positive ZEP520 EBL resist.
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JEOL JBX-9300FS
Electron Beam Lithography System
http://nanolithography.gatech.edu
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