Delay Calculations Section 6.1-6.4 Load Capacitance Calculation Cload=Cself+Cwire+Cfanout Fanout Capacitance Fanout Gate Capacitance • Cfanout : fanout capacitance due to the inputs of subsequent.

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Transcript Delay Calculations Section 6.1-6.4 Load Capacitance Calculation Cload=Cself+Cwire+Cfanout Fanout Capacitance Fanout Gate Capacitance • Cfanout : fanout capacitance due to the inputs of subsequent.

Delay Calculations
Section 6.1-6.4
Load Capacitance Calculation
Cload=Cself+Cwire+Cfanout
Fanout Capacitance
Fanout Gate Capacitance
• Cfanout : fanout capacitance due to the inputs of
subsequent gates, CG.
Cfanout=CG1+CG2+CG3….
Assumption: Each fanout is an inverter.
Input Capacitance Calculation
• COL: overlap capacitance
• CGN, CGP: Thin Oxide Capacitance
Worst Case Analysis Assumption
• The thin-oxide capacitance is voltage
dependent.
• The worst case analysis uses CoxWL to
compute its worst case value.
Thin Oxide Capacitance:Cg
CG=WLCox=WL(εox/tox)=WCg
Unit of Cg: fF/μm
[Worst Case Analysis]
Cg
tox
L
Cg
110 nm
5
1.61 fF/μm
7.5 nm
0.35 μm
1.65 fF/μm
2.2 nm
0.1 μm
1.61 fF/μm
Cg is approximately 1.61 fF/μm for the last 25 years.
Exception: the 0.18 μm process, which has a Cg of 1.0 fF/ μm.
[Worst Case Analysis]
Thin Oxide Capacitance:Col
Components of Col
Col=Cf+Cov
Cf:fringing capacitance
Cov: overlap capacitance
Redefine Cg
• For 0.13 μm,
– Cg (due to tox alone): 1.6 fF/μm [Hodges, p.72]
– Col(due to Cov and Cf): 0.25 fF/ μm [Hodges, p.80]
– Redefine Cg [Hodges, p.259] as
• Cg=CoxL+2Col
• Cg =1.6 fF/μm+ 2 0.25 fF/μm=2 fF/μm
[Worst Case Analysis]
• Cg has been constant for over 20 years
– Multipy Cg by W to obtain the total capacitance
due to tox, Cov and Cf
[Worst Case Analysis]
Gate Capacitance of an Inverter
• CG=Cg(Wn+Wp)
• CG=2fF/μm(Wn+Wp)
[Worst Case Analysis]
Input Capacitance of a
3-input NAND Gate
2W
2W
2W
3W
3W
3W
CG=Cg(Wn+Wp)=Cg(3W+2W)= Cg(5W)
Fanout Gate capacitance of n Inverters
• Cfanout=2fF/μm[(Wn+Wp)1+(Wn+Wp)2…(Wn+Wp)n]
For NANDs, NORs, apply the
above equation with appropiate widths.
[Worst Case Analysis]
Self-Capacitance Calculation
1. Eliminate capacitors not connected to the output
2. Assume the transistors are either on (Saturation) or off (Cutoff).
3. CGD is negligible in either saturation or cutoff.
Calculation of Self-Capacitance of an
Inverter
Cself=CDBn+CDBP+2COL+2COL
CDBn=CjnWn
CDBp=CjpWp
COL=ColW
Cself=CjnWn+CjpWp+2Col(Wn+Wp)
Assume Cjn=Cjp
Cself=Ceff(Wn+Wp)
For 0.13: Ceff=1 fF/μm [Hodges,
p. 261]
Self-Capacitance of a NOR
Condition:
A=0
B=0→1
CDB4, CSB3 do not need to be charged.→NOT THE WORST CASE
CDB3 is charged, while CDB1 and CDB2 are discharged.
To avoid double counting, CDB1 and CDB2 will be called CDB12.
Self-Capacitance of NOR
Constant
Voltage at X
Self-Capacitance of a NOR
WORST
CASE!!
CDB4 and CSB3 need to be charged
CDB3 is charged, while CDB1 and CDB2 are
discharged
Self-Capacitance of NOR
WORST
CASE!!
Wire Capacitance
• Ignore wire capacitance if the length of a wire
is less than a few microns.
• Include wires longer than a few microns
– Cwire=CintLwire
– Cint=0.2 fF/um
• For very long wires use distributed model
Example 6.4
• Capacitance Calculation for Inverter
Propagation Delay
Conclusion
• Propagation delay depends on the arrival time
of inputs
– In a series stack, the delay increases as the
late arriving input is further from the
output.
Worst Case
Sequence:
A: charges X
B: charges Y
C: discharges X, Y, CL
Sequence:
C: discharges X, (if any)
B: discharges Y (if any)
A: discharges CL
Improved!
Design Strategy 1
• Reorder the inputs so that
– the earliest signal arrive lower in the stack
– The latest signals arrive near the top of the
stack
Design Strategy 2
• To reduce delay:
– WC>WB>WA
• Problem:
– Device capacitance are increased as the
device sizes are increased.
Delay Calculation with Input Slope
Improve Delay Calculation with Input
Slope
iout=iNMOS-iPMOS
1. Select Vin and Vout
2. Calculate iNMOS and iPMOS
3. Calculate iout
Inverter Output Current as a function
of Vout and Vin
Simplified Inverter Output Current as a
function of Vout and Vin
Example 6.5
• Compute the delay (tPHL,step) of a CMOS
inverter due to a step input
• Compute the delay (tPHL,step) of a CMOS
inverter due to an input ramp with a rise time
of tr
Conclusion from Example 6.5
tramp=Δtramp+tstep
tstep=0.7RC
Δtramp depends on the tr of the driving circuit.
Δtramp=0.7RC/2=0.3RC
Assumption: the tr is equal to 2tPLH
Inverter Chain Delay for a Ramp Input
Example 6.6