Transcript Radiation Effects on the Aeroflex RadHard Eclipse FPGA Ronald Lake Aeroflex Colorado Springs Lake C3 / MAPLD2004

Radiation Effects on the Aeroflex RadHard Eclipse
FPGA
Ronald Lake
Aeroflex Colorado Springs
Lake
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RadHard Eclipse Radiation Effects Overview
• Test Techniques
• Single Event Effects Results
– Single Event Upset
– Single Event Latch-up
• Total Ionizing Dose
– DC Characteristics
– AC Characteristics
• TMR Effects on SEU
• Summary
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Hardness Testing Conditions - SEE
• SEU - 25oC, 2.25V core and 3.0V I/O, in accordance with
EIA/JESD57
• SEU - FPGA programmed (configured) with three data
storage components
– Dynamic Shift Registers - Two at 560 bits
– Static Register File - 64 x 16 bits
– Static RAM - 55,296 bits
• SEL - 125oC, 2.7V core and 3.6V I/O, in accordance with
EIA/JESD57
• 208-lead ceramic quad flat-pack (CQFP)
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Hardness Testing Conditions - SEU
• Alternating ones and zeros data used for all three storage
components of the FPGA
• National Instruments tester at 1MHz frequency
– Write/read shift register
– Read only register file and RAM
– After a cell upsets, the correct data is re-written to the
cell
• Texas A&M University Cyclotron Institute
– Au, Kr, and Ar from 0o (normal incidence) to 60o
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Heavy Ion Beam For SEU Analysis
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Hardness Testing Conditions - SEL
• Devices statically biased during irradiation
– Supply currents monitored for latch-up
• Lawrence Berkeley National Laboratory
– Au at 41o
– Effective fluence at 1E7 ions/cm2
– Effective LET = 120 MeV-cm2/mg
• Devices functionally re-verified after irradiation
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Heavy Ion Chamber for SEL Analysis
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Hardness Testing Conditions - TID
• Irradiated under worst case temperature (25oC) and static
bias conditions (max VDD) per MIL-STD-883E Method
1019
• FPGA programmed with 60 AC paths
• J.L. Shepherd model 81-22 Cobalt 60 gamma cell
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Cobalt 60 Total Ionizing Dose System
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Single Event Upset Data Plot
1.0E-07
2
Cross-section (cm /bit)
1.0E-06
1.0E-08
Register File
RegF Weibull
Shift Reg
ShiftR Weibull
RAM
RAM Weibull
1.0E-09
1.0E-10
0
20
40
60
80
100
2
LET (MeV-cm /mg)
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Hardness Results - SEE
SEU - Error-rates - GEO orbit, Adam’s 90% WC
FPGA
Component
Temp
(C)
RegF
ShiftR
RAM
25
25
25
Saturated
VDD
Number
Onset LET
Weibull Weibull
Error-rate
X-section
Core & I/O of storage
2
Shape
Width
MeV-cm /mg (errors/bit-day)
(V)
cells
(cm2/bit)
2.25/3.00
1,024
1.4
90
2.0E-07
20
4.7E-09
2.25/3.00
1,120
1.4
55
4.0E-07
14
3.6E-08
2.25/3.00
55,296
1.95
125
9.0E-08
17.5
6.3E-10
SEL - No latch-up to 120 MeV-cm2/mg
Conditions
VDD I/O, VDD
Core, Temp
Fluence Effective
Flux
Normal LET, Angle
Effective LET
SN Ion
Latchup (normal) Fluence
2
MeV-cm²/mg degrees ions/cm -s
2
2 MeV-cm²/mg
ions/cm ions/cm
3.6, 2.7, 125C 24 Au
3.6, 2.7, 125C 10 Au
3.6, 2.7, 125C 22 Au
3.6, 2.7, 125C 2 Au
90.3
90.3
90.3
90.3
41
41
41
41
7.8E+04
6.9E+04
6.0E+04
6.3E+04
0
0
0
0
1.3E+7
1.3E+8
1.3E+7
1.3E+7
1.0E+7
1.0E+8
1.0E+7
1.0E+7
120
120
120
120
TID - 113 rads(Si)/s
FPGA meets datasheet ACs and DCs post 300 krad(Si)
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Hardness Results - TID - Supply Current DCs
Most Shifted DCs - Post radiation minus Pre-rad
Temp
(C)
25
25
25
25
25
25
25
Test Condition
QIDD
AIDD
AIDD
AIDD
AIDD
AIDD
AIDD
1 MHz
5 MHz
10 MHz
20 MHz
50 MHz
100 MHz
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VDD
VDD
Core (V) I/O (V)
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
Units Pre-rad
mA
mA
mA
mA
mA
mA
mA
0.19
198
304
437
688
1393
1660
12
Post
Post
Delta
Delta
100k rad 300k rad 100k - Pre 300k - Pre
0.2
3.5
0.01
3.31
203
631
5
433
309
732
5
428
442
860
5
423
688
1110
0
422
1402
1770
9
377
1643
1813
-17
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Hardness Results - 100 krad(Si) TID - ACs
5 most shifted ACs on each of 2 devices
Post 100 krad(Si) minus Pre irradiation
SN Temp
25
25
25
25
25
26
26
26
26
26
25
25
25
25
25
25
25
25
25
25
Test
TPLH_sr_16_2_a21
TPHL_sr_16_2_a21
TPLH_sr_16_2_f21
TPHL_sr_16_2_qb2
TPHL_sr_16_2_qa2
TPHL_sr_16_2_qa2
TPHL_sr_16_2_a21
TPHL_sr_16_2_f21
TPHL_sr_16_2_qb2
TPHL_sr_16_2_qa2
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VDD
VDD
Post
%
Units Pre-rad
Post-Pre
Core (V) I/O (V)
100 krad
Change
2.5
3
ns
7.73
7.66
-0.07
-0.96
2.5
3
ns
9.08
8.98
-0.09
-1.02
2.5
3
ns
7.47
7.38
-0.09
-1.24
2.5
3
ns
5.62
5.54
-0.07
-1.32
2.5
3
ns
5.57
5.50
-0.07
-1.33
2.7
3.6
ns
5.14
5.13
-0.07
-1.25
2.5
3
ns
9.08
9.17
-0.12
-1.30
2.5
3
ns
8.55
8.71
-0.14
-1.57
2.5
3
ns
5.62
5.67
-0.10
-1.77
2.5
3
ns
5.57
5.56
-0.10
-1.80
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Hardness Results - 300 krad(Si) TID - ACs
5 most shifted ACs on 2 devices
Post 300 krad(Si) minus Pre irradiation
SN Temp
25
25
25
25
25
26
26
26
26
26
25
25
25
25
25
25
25
25
25
25
Test
TPLH_inv_ch_i3_t
TPLH_inv_ch_i2_t
TPHL_inv_ch_i1_t
TPHL_nand16_o2
TPHL_nand16_o0
TPLH_inv_ch_i2_t
TPHL_inv_ch_i1_t
TPHL_sr_d_so
TPLH_inv_ch_i3_t
TPLH_inv_ch_i2_t
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VDD
VDD
Post
%
Units Pre-rad
Post-Pre
Core (V) I/O (V)
300 krad
Change
2.5
3
ns
152.1
160.8
8.7
5.7
2.5
3
ns
155.4
164.3
8.9
5.7
2.5
3
ns
154.6
163.4
8.8
5.7
2.5
3
ns
52.8
55.7
2.9
5.5
2.5
3
ns
52.2
55.1
2.9
5.5
2.5
3
ns
156.7
163.8
7.1
4.5
2.5
3
ns
155.8
162.8
7.0
4.5
2.5
3
ns
5.9
6.1
0.3
4.4
2.5
3
ns
153.3
160.0
6.7
4.4
2.7
3.6
ns
144.4
150.0
5.7
3.9
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RadHard Eclipse Single Voter TMR
w_set
w_reset
w_set
w_reset
I71
PRE
CLR
N_1
D
w_set
w_reset
I715
PRE
CLR
Q
D
DFFPC
w_dedclk
w_set
w_reset
w_dedclk
w_set
w_reset
I61
PRE
CLR
N_1
D
w_dedclk
w_set
w_reset
I714
PRE
CLR
S1
S0
Q
D
DFFPC
MUX4x0
w_dedclk
w_set
w_reset
I51
PRE
CLR
D
w_dedclk
w_set
w_reset
I713
PRE
CLR
Q
D
DFFPC
Q
DFFPC
w_dedclk
Lake
Q
DFFPC
w_dedclk
w_set
w_reset
N_1
Q
DFFPC
w_dedclk
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w_dedclk
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RadHard Eclipse Single Voter Data
1E-5
No TMR Shift Register
No TMR Weibull
TMR Single Voter
1E-6
Cross Section (cm
2
/ bit)
TMR SV Weibull
1E-7
1E-8
No errors at LET of 64
MeV-cm 2/mg. Not tested
between LET of 64 and
90 MeV-cm2/mg
1E-9
1E-10
0
20
40
60
80
100
2
LET (MeV-cm /m g)
Saturated
VDD
Onset LET
Temp
Weibull Weibull
Error-rate
X-section
Core & I/O
2
(C)
Shape
Width
MeV-cm /mg (errors/bit-day)
(V)
(cm2/bit)
No TMR
25
2.25/3.00
1.4
55
4.0E-07
14
3.6E-08
TMR Single Voter
25
2.25/3.00
1.8
25
7.0E-08
64
2.3E-10
TMR Triple Voter *
25
2.25/3.00
1.8
25
7.0E-09
100
5.3E-15
FPGA
Component
Error-rates based on SpaceRadiation 4.0 Weibull analysis, Geo orbit, Adam’s 90% WC environment
* Estimate based on assumed onset LET of 100 and saturated x-section of 7E-9
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RadHard Eclipse Single Voter Data
Cross Section (cm
2
/ bit)
1E-5
030927 BNL
1E-6
Weibull
030927 QL BNL
031106 LBNL
1E-7
031212 LBNL
BNL QL FPGA
040629 SN A
1E-8
040629 SN B
040629 SN C
040629 SN D
1E-9
040219 BNL
1E-10
0
20
40
60
80
100
120
LET (MeV-cm 2/m g)
8/17/4 TMR2 Data : TAMU
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Summary
• Completed RadHard Eclipse FPGA pre-qualification
evaluation of radiation performance
– Low Single Event Upset error rate (geosynchronous
orbit, Adams 90% worst case environment)
– Single Event Latch-up immune to > 108 MeV-cm2/mg
– Passes datasheet parameters to > 300 krad(Si) Total
Ionizing Dose
– TMR design maps well to logic cell architecture
• Offered as a flight qualified QML Q & V RadHard
Standard Microcircuit Drawing device
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