Identification of Defects and Secondary Phases in Reactively Sputtered Cu2ZnSnS4 Thin Films Vardaan Chawla, Stacey Bent, Bruce Clemens April 7th, 2010 Center on Nanostructuring.
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Identification of Defects and Secondary Phases in Reactively Sputtered Cu
2
ZnSnS
4
Thin Films
Vardaan Chawla, Stacey Bent, Bruce Clemens April 7 th , 2010 Center on Nanostructuring for Efficient Energy Conversion Materials Science and Engineering Stanford University
Outline
• Motivation • Problems with characterization of thin films • Experimental approach • Results • X-ray diffraction • Raman Spectroscopy • Transmission Electron Microscopy • Scanning Auger Microscopy • Summary & Acknowledgements 2
Motivation – Phase Equilibrium
Ternary Phase Diagram
SnS 2
Binary Phase Diagram
3 Cu 2 SnS 3 Cu 2 S ZnS • CZTS is a line compound between Cu 2 SnS 3 and ZnS • Theoretically even a 2-3% compositional variation could lead to phase separation Olekseyuk, I.D. "Phase Equilibria in the Cu2S-ZnS-SnS2 System."
Journal of Alloys and Compounds
. 368. (2004): 135-143. Print.
Motivation – Crystal Structure
Theoretical XRD Patterns of CZTS, Cu 2 SnS 3 , and ZnS
4 • Crystal structures of secondary phases similar to CZTS • All primary peaks overlap and hard to separate • Low intensity peaks cannot be seen easily in thin films
Experimental Approach
Reactive Sputtering Zn
H 2 S H 2 S H 2 S H 2 S H 2 S H 2 S
4H 2 S + 2Cu + Zn + Sn
CZTS
Substrate Cu 2 ZnSnS 4 + 4H 2
• Introduce H 2 S into chamber during sputter deposition • Sulfur is incorporated into the film in one step (no anneal) • Expect to see higher densities and improved film quality 5
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Characterization - XRD
SnS 2
Varying Zn/(Cu+Sn) Ratio
Cu 2 SnS 3 Cu 2 S ZnS • Zn/(Cu+Sn) ratio is varied while holding Cu/Sn ratio constant • Impossible to determine difference between CZTS, CTS, and ZnS from XRD pattern Olekseyuk, I.D. "Phase Equilibria in the Cu2S-ZnS-SnS2 System."
Journal of Alloys and Compounds
. 368. (2004): 135-143. Print.
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Characterization - XRD
Varying Cu/(Zn+Sn) Ratio
SnS 2 Cu 2 SnS 3 Cu 2 S ZnS CuS Cu 2 S • Cu/(Zn+Sn) ratio is varied while holding Zn/Sn ratio constant • Need to get very far off 2:1:1 stoichiometry before any Cu x S phases can be seen • Cu x S can be removed with KCN etch Olekseyuk, I.D. "Phase Equilibria in the Cu2S-ZnS-SnS2 System."
Journal of Alloys and Compounds
. 368. (2004): 135-143. Print.
Characterization – Raman
Varying Zn/(Cu+Sn) Ratio Varying Cu/(Zn+Sn) Ratio
8 • Raman spectra show only minor changes even though composition is varied dramatically • No evidence of the Cu x S phase shown by other groups at growth temperatures higher than 500C
340 nm 85 nm 55 nm 1.75 µm 1 µm
Device Fabrication
CZTS Device Stack
Aluminum Grid ZnO:Al (n-type) ZnO CdS (n-type)
CZTS Absorber (p-type)
Molybdenum Layer
SEM Image ZnO:Al ZnO CdS CZTS
9 3000 µm Glass Substrate
500nm Mo
• Zn-rich films incorporated into standard CIGS device stack for testing
Device Characterization
I-V Measurement EQE Measurement
10 • First CZTS devices grown by a reactive sputtering process • • Efficiency = 1.35%
Degraded EQE clearly points to undetected defects in the absorber
500nm
Characterization - TEM
Second phase CZTS 11
CZTS
• Detrimental secondary phase interspersed in CZTS matrix • Stacking faults in the secondary phase point to a transition between cubic and hexagonal crystal structures Second phase
Cu Zn Sn
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Characterization - Auger
CZTS ZnS 2 um • Raster beam over sputtered surface of sample and scan for Cu, Zn, Sn • Overlay Cu, Zn, Sn signal • Composition variation points to CZTS / ZnS (Zn-rich)
Characterization - CdZnS
CdS – ZnS Phase Diagram XRD before and after CBD
13 C C + H H • Cd penetration into ZnS lowers the cubic-hexagonal transition temperature • Stacking faults in TEM images are created during CBD of CdS layer Chen et al.“Solid State Phase Equilibria in the ZnS-CdS System."
Materials Research Bulletin
. 23. (1988): 1667-1673. Print.
Sn Cd
Characterization - Auger
CZTS CdZnS 2 um • Overlay Sn and Cd signal • Cd ion exchanges with Zn during bath deposition and penetrates the ZnS phase 14
Summary
• CZTS thin films were grown using Reactive Sputtering • Films were characterized using X-ray Diffraction and Raman Spectroscopy • Full devices have been grown and tested but are limited due to secondary phases in the films • Transmission Electron Microscopy and Scanning Auger Microscopy can be used to identify these secondary phases 15
Acknowledgements
• US Department of Energy, Office of Basic Energy Sciences as part of an Energy Frontier Research Center • http://www.er.doe.gov/bes/EFRC/index.html
• Applied Quantum Technologies • Local thin film solar startup • http://www.aqtsolar.com
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Questions
Questions?
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