Transcript ELEC 5770-001/6770-001 (Fall 2004) ELEC 7770-001 (Spring 2005) (Prof. A. D. Singh) Low-Power Design of CMOS Circuits Vishwani D.

ELEC 5770-001/6770-001 (Fall 2004)
ELEC 7770-001 (Spring 2005)
(Prof. A. D. Singh)
Low-Power Design of CMOS Circuits
Vishwani D. Agrawal
James J. Danaher Professor
Department of Electrical and Computer Engineering
Auburn University
http://www.eng.auburn.edu/~vagrawal
[email protected]
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Motivation
• Low power applications
– Remote systems (e.g., satellite)
– Portable systems (e.g., mobile phone)
• Methods of low power design
– Reduced supply voltage
– Adiabatic switching
– Clock suppression
– Logic design for reduced activity
– Reduce Hazards (40% in arithmetic logic)
– Software techniques
• Reference: Chandrakasan and Brodersen
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Low-Power Design
• Design practices that reduce power
consumption at least by one order of
magnitude; in practice 50% reduction is
often acceptable.
• General topics
– High-level and software techniques
– Gate and circuit-level methods
– Power estimation techniques
– Test power
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VLSI Chip Power Density
Source: Intel
Sun’s
Surface
Power Density (W/cm2)
10000
Rocket
Nozzle
1000
Nuclear
Reactor
100
8086
Hot Plate
10 4004
8008 8085
386
286
8080
1
1970
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1980
P6
Pentium®
486
1990
Year
2000
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Specific Topics on Low-Power
•
•
•
•
•
Power dissipation in CMOS circuits
Low-power CMOS technologies
Dynamic reduction techniques
Leakage power
Power estimation
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Components of Power
• Dynamic
– Signal transitions
• Logic activity
• Glitches
– Short-circuit
• Static
– Leakage
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Power of a Transition
isc
R
VDD
Power
Vo
Vi
CL
R
= CLVDD2/2
+ Psc
Ground
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Short Circuit Current, isc(t)
VDD
VDD - VTp
Vi(t)
Volt
Vo(t)
VTn
0
45μA
iscmaxr
isc(t)
Amp
0
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tB
tE
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Time (ns)
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Peak Short Circuit Current
• Increases with the size (or gain, β) of
transistors
• Decreases with load capacitance, CL
• Largest when CL= 0
• Reference: M. A. Ortega and J. Figueras,
“Short Circuit Power Modeling in
Submicron CMOS,” PATMOS’96, Aug.
1996, pp. 147-166.
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Short-Circuit Energy per Transition
• Escr=∫
tE
tB
VDD isc(t)dt = (tE – tB) IscmaxrVDD /2
• Escr = tr (VDD+ VTp-VTn) Iscmaxr /2
• Escf = tf (VDD+ VTp-VTn) Iscmaxf /2
• Escf = 0, when VDD = |VTp| + VTn
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Short-Circuit Energy
• Increases with rise and fall times of input
• Decreases for larger output load
capacitance
• Decreases and eventually becomes zero
when VDD is scaled down but the
threshold voltages are not scaled down
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Short-Circuit Power Calculation
• Assume equal rise and fall times
• Model input-output capacitive coupling
(Miller capacitance)
• Use a spice model for transistors
– T. Sakurai and A. Newton, “Alpha-power Law
MOSFET model and Its Application to a
CMOS Inverter,” IEEE J. Solid State Circuits,
vol. 25, April 1990, pp. 584-594.
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Psc vs. C
0.7μ CMOS
45%
Psc/Ptotal
3ns
0%
35
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Input rise time
0.5ns
C (fF)
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Technology Scaling
• Scale down by factors of 2 and 4, i.e.,
model 0.7, 0.35 and 0.17 micron
technologies
• Constant electric field assumed
• Capacitance scaled down by the
technology scale down factor
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Technology Scaling Results
L=0.17μ, C=10fF
Psc/Ptotal
70%
L=0.35μ, C=20fF
10%
L=0.7μ, C=40fF
0%
0.4
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tr (ns)
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Effects of Scaling Down
•
•
•
•
1-16% short-circuit power at 0.7 micron
4-37% at 0.35 micron
12-60% at 0.17 micron
Reference: S. R. Vemuru and N.
Steinberg, “Short Circuit Power Dissipation
Estimation for CMOS Logic Gates,” IEEE
Trans. on Circuits and Systems I, vol. 41,
Nov. 1994, pp. 762-765.
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Summary: Short-Circuit Power
• Short-circuit power is consumed by each
transition (increases with input transition time).
• Reduction requires that gate output transition
should not be slower than the input transition
(faster gates can consume more short-circuit
power).
• Scaling down of supply voltage with respect to
threshold voltages reduces short-circuit power.
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Components of Power
• Dynamic
– Signal transitions
• Logic activity
• Glitches
– Short-circuit
• Static
– Leakage
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Leakage Power
IG
Ground
VDD
R
n+
Isub
IPT
IGIDL
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n+
ID
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Leakage Current Components
• Subthreshold conduction, Isub
• Reverse bias pn junction conduction, ID
• Gate induced drain leakage, IGIDL due to
tunneling at the gate-drain overlap
• Drain source punchthrough, IPT due to
short channel and high drain-source
voltage
• Gate tunneling, IG through thin oxide
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Subthreshold Current
Isub = μ0 Cox (W/L) Vt2 exp{(VGS-VTH)/nVt }
μ0: carrier surface mobility
Cox: gate oxide capacitance per unit area
L: channel length
W: gate width
Vt = kT/q: thermal voltage
n: a technology parameter
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IDS for Short Channel Device
IDS = μ0 Cox (W/L) Vt2 exp{(VGS-VTH+ηVDS)/nVt}
VDS = drain to source voltage
η: a proportionality factor
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Increased Subthreshold Leakage
Scaled device
Log Isub
Ic
0 VTH’ VTH
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Gate voltage
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Summary: Leakage Power
• Leakage power as a fraction of the total power
increases as clock frequency drops. Turning
supply off in unused parts can save power.
• For a gate it is a small fraction of the total power;
it can be significant for very large circuits.
• Scaling down features requires lowering the
threshold voltage, which increases leakage
power; roughly doubles with each shrinking.
• Multiple-threshold devices are used to reduce
leakage power.
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Components of Power
• Dynamic
– Signal transitions
• Logic activity
• Glitches
– Short-circuit
• Static
– Leakage
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Power of a Transition
isc
R
VDD
Power
Vo
Vi
CL
R
= CLVDD2/2
+ Psc
Ground
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Dynamic Power
• Each transition of a gate consumes CV2/2.
• Methods of power saving:
– Minimize load capacitances
• Transistor sizing
• Library-based gate selection
– Reduce transitions
• Logic design
• Glitch reduction
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Glitch Power Reduction
• Design a digital circuit for minimum
transient energy consumption by
eliminating hazards
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Theorem 1
• For correct operation with minimum
energy consumption, a Boolean gate
must produce no more than one
event per transition
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Theorem 2
• Given that events occur at the input of a
gate (inertial delay = d ) at times t1 < . .
. < tn , the number of events at the gate
output cannot exceed
tn – t1
min ( n , 1 + -------d
)
tn - t1
t1
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t2
t3
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tn
time
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Minimum Transient Design
• Minimum transient energy condition for
a Boolean gate:
| t i - tj | <
d
Where ti and tj are arrival times of input
events and d is the inertial delay of gate
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Balanced Delay Method
• All input events arrive simultaneously
• Overall circuit delay not increased
• Delay buffers may have to be inserted
4?
1
1
1
1
1
1
1
3
1
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Hazard Filter Method
• Gate delay is made greater than maximum input
path delay difference
• No delay buffers needed (least transient energy)
• Overall circuit delay may increase
2
1
1
1
1
1?
3?
1
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1
1
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Linear Program
• Variables: gate and buffer delays
• Objective: minimize number of
buffers
• Subject to: overall circuit delay
• Subject to: minimum transient
condition for multi-input gates
• AMPL, MINOS 5.5 (Fourer, Gay and
Kernighan)
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Variables: Full Adder add1b
0
0
0
0
0
1
1
1
0
0
1
0
0
0
1
1
1
0
0
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0
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Objective Function
• Ideal: minimize the number of non-zero
delay buffers
• Actual: sum of buffer delays
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Specify Critical Path Delay
0
0
0
0
0
1
1
1
0
0
1
0
0
0
1
1
1
1
0
0
0
1
Sum of delays on each I/O path ≤ maxdel
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Multi-Input Gate Condition
d1
0
0
0
1
d
d
1
0
0
1
0
1
d1 - d2 ≤ d
d2 - d1 ≤ d
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d
d2
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AMPL Solution: maxdel = 6
1
2
1
1
1
2
1
1
1
2
2
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AMPL Solution: maxdel = 7
3
1
1
1
2
1
1
2
1
2
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AMPL Solution: maxdel ≥ 11
5
1
1
1
2
3
1
3
4
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Power Estimates for add1b
Power* with respect to Ref.
No.
maxdel
of
Ref: model del.
Ref: unit del.
buf.
Peak
Ave.
Peak
Ave.
6
2
0.60
0.89
0.60
0.90
7
1
0.56
0.85
0.56
0.86
≥11
0
0.52
0.80
0.52
0.81
* Hsiao et al., ICCAD-97
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A Limitation
• Constraints are written by path
enumeration.
• Since number of paths in a circuit can be
exponential in circuit size, the formulation
is infeasible for large circuits.
• Example: c880 has 6.96M constraints.
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Timing Window
• Define two timing window variables per gate
output:
– ti Earliest time of signal transition at gate i.
– Ti Latest time of signal transition at gate i.
t1, T1
.
.
.
ti, Ti
i
tn, Tn
Ref: T. Raja, Master’s Thesis, Rutgers Univ., 2002
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Linear Program
• Gate variables d4 . . . d12
• Buffer Variables d15 . . . d29
• Corresponding window variables t4 . . . t29 and T4 . . .
T29.
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Multiple-Input Gate Constraints
For Gate 7:
T7 > T5 + d7;
T7 > T6 + d7;
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t7 < t 5 + d 7;
t7 < t6 + d 7;
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d7 > T7 - t7;
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Single-Input Gate Constraints
Buffer 19:
T16 + d19 = T19 ;
t16 + d19 = t19 ;
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Overall Delay Constraints
T11 < maxdelay
T12 < maxdelay
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Advantage of Timing Window
• Path constraints (exponential in n):
2 × 2 × … 2 = 2n paths between I/O pair
• A single variable specifies I/O delay. Total variables,
O(n).
• LP constraint set is linear in the size of circuit.
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Number of constraints
Comparison of Constraints
Number of gates in circuit
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Results: 1-Bit Adder
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Estimation of Power
• Circuit is simulated by an event-driven
simulator for both optimized and unoptimized gate delays.
• All transitions at a gate are counted as
Events[gate].
• Power consumed  Events[gate] x # of
fanouts.
• Ref: “Effects of delay model on peak
power estimation of VLSI circuits,” Hsiao,
et al. (ICCAD`97).
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Color codes for number of transitions
Original 1-Bit Adder
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Color codes for number of transitions
Optimized 1-Bit Adder
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1-Bit Adder Design
Simulation over all possible vector transitions
•Average power = optimized/unit delay
= 244 / 308 = 0.792
•Peak power
= optimized/unit delay
= 6 / 10 = 0.60
Power Savings :
Peak
= 40 %
Average = 21 %
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Results: 4-Bit ALU
maxdelay
Buffers inserted
7
10
12
15
5
2
1
0
Power Savings :
Peak = 33 %, Average = 21 %
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Physical Design
Gate
Gate
Gate
l/w
l/w
l/w
Gate
l/w
Gate delay modeled as a linear function of gate size, total load capacitance,
and fanout gate sizes (Berkelaar and Jacobs, 1996).
Layout circuit with some nominal gate sizes.
Enter extracted routing delays in LP as constants and solve for gate delays.
Change gate sizes as determined from a linear system of equations.
Iterate if routing delays change.
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Physical Level Verification
• Assumptions in the logic level power
analysis
– Leakage and short circuit power are a small
portion of the entire power consumption of the
circuit.
– Area overhead is tolerable for the achieved
power savings.
– Glitches are a major portion of the power
consumption of the chip.
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VDD
Open at t = 0
Large C
V
Circuit
Energy, E(t)
Power Calculation in Spice
Ground
t
1
1
2
E(t) = -- C VDD - -- C V 2 ~ C VDD ( VDD - V )
2
2
Ref.: M. Shoji, CMOS Digital Circuit Technology, Prentice Hall, 1988, p. 172.
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Power Dissipation of ALU4
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Signal Amplitude, Volts
F0 Output of ALU4
Original ALU, delay = 7 units (~3.5ns)
5
0
Minimum energy ALU, delay = 21 units (~10ns)
5
0
0
40
80
120
160
nanoseconds
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Benchmark Circuits
Circuit
Maxdel.
(gates)
No. of
Buffers
C432
17
34
95
66
0.72
0.62
0.67
0.60
C880
24
48
62
34
0.68
0.68
0.54
0.52
C6288
47
94
294
120
0.40
0.36
0.36
0.34
c7552
43
86
366
111
0.38
0.36
0.34
0.32
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Normalized Power
Average
Peak
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Bufferless Design
1
2
3
5
4
d=2
1
2
3
7
d=1
Unoptimized Circuit
d=1
d=1
d=2
5
4
d=1
1
2
3
6
4
7
d=1
d=2
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d=2
d=1
Buffered
optimization
d=1
5
7
6
d=2
6
d=1
d=1
Bufferless
optimization
d=1
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Buffer optimized Circuit
Unoptimized Circuit
time
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nMOS optimized Circuit
Example Circuit – Spectre Results
time
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Example Circuit – Energy Consumption
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Example Circuit – Leakage
Analysis
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Physical Level Verification
AMPL
Delays
Technology Mapping
Transistor Sizes
Create Cells using Prolific
Standard Cell Library
Standard Cell Place and Route
No
Routing
Acceptable
?
Yes
Optimized Layout
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Layout
Extract Routing Capacitance
Routing load
Analog Power simulations
Energy Consumption
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Design of Benchmark C7552
c7552 Un-optimized
Gate Count
Transistor Count
Critical Delay
Area
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= 3827
≈ 40,000
= 2.15 ns
= 710 x 710 um2
c7552 optimized
Gate Count
= 3828
Transistor Count ≈ 45,000
Critical Delay
= 2.15 ns
Area
= 760 x 760 um2(1.14)
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Instantaneous Power Savings
Peak Power Savings = 68%
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Average Energy Savings
Average Energy Saving = 58%
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Patents and Dissertations
•
Patents
–
–
•
V. D. Agrawal, “Low Power Circuits Through Hazard Pulse
Suppression,” U.S. Patent 5,983,007, November 1999.
T. Raja, V. D. Agrawal and M. L. Bushnell, “Variable Input
Delay CMOS Logic and Its Application to Low Power Design,”
to be submitted to USPTO through Rutgers Univ., May 2004.
Dissertations
–
–
–
T. Raja, Minimum Dynamic Power Design of CMOS Circuits
using a Reduced Constraint Set Linear Program, MS Thesis,
Dept. of ECE, Rutgers University, May 2002.
T. Raja, Minimum Dynamic Power CMOS Design with Variable
Input Delay Logic , PhD Thesis, Dept. of ECE, Rutgers
University, May 2004.
S. Uppalapati, Low Power Design of Standard Cell Digital
VLSI Circuits, MS. Thesis, Dept. of ECE, Rutgers University,
October 2004.
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Papers
• V. D. Agrawal, “Low-Power Design by Hazard Filtering,” Proc. 10th Int.
Conf. VLSI Design, Jan. 1997, pp. 193-197.
• V. D. Agrawal, M. L. Bushnell, G. Parthasarathy, and R. Ramadoss,
“Digital Circuit Design for Minimum Transient Energy and a Linear
Programming Method,” Proc. 12th Int. Conf. VLSI Design, Jan. 1999,
pp. 434-439.
• T. Raja, V. D. Agrawal, and M. L. Bushnell, “Minimum Dynamic Power
CMOS Circuit Design by a Reduced Constraint Set Linear Program,”
Proc. 16th Int. Conf. VLSI Design, Jan. 2003, pp. 527-532.
• T. Raja, V. D. Agrawal, and M. L. Bushnell, “CMOS Circuit Design for
Minimum Dynamic Power and Highest Speed,” Proc. 17th Int. Conf.
VLSI Design, Jan. 2004, pp. 1035-1040.
• T. Raja, V. D. Agrawal, and M. L. Bushnell, “Variable Input Delay
CMOS Logic for Low Power Design,” Proc. 18th Int. Conf. VLSI
Design, Jan. 2005, pp. 598-605.
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Other References
• R. Fourer, D. M. Gay and B. W. Kernighan, AMPL: A Modeling Language
for Mathematical Programming, South San Francisco: The Scientific
Press, 1993.
• M. Berkelaar and E. Jacobs, “Using Gate Sizing to Reduce Glitch
Power,” Proc. ProRISC Workshop, Mierlo, The Netherlands, Nov. 1996,
pp. 183-188.
• M. Hsiao, E. M. Rudnick and J. H. Patel, “Effects of Delay Model in Peak
Power Estimation of VLSI Circuits,” Proc. ICCAD, Nov. 1997, pp. 45-51.
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Books on Low-Power Design
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•
•
•
•
•
•
•
•
•
•
•
•
•
•
A. Chandrakasan and R. Brodersen, Low-Power Digital CMOS Design, Boston: Kluwer Academic
Publishers, 1995.
A. Chandrakasan and R. Brodersen, Low-Power CMOS Design, New York: IEEE Press, 1998
L. Benini and G. De Micheli, Dynamic Power Management Design Techniques and CAD Tools,
Boston: Kluwer Academic Publishers, 1998.
T. D. Burd and R. A. Brodersen, Energy Efficient Microprocessor Design, Boston: Kluwer Academic
Publishers, 2002.
M. S. Elrabaa, I. S. Abu-Khater and M. I. Elmasry, Advanced Low-Power Digital Circuit Techniques,
Boston: Kluwer Academic Publishers, 1997.
R. Graybill and R. Melhem, Power Aware Computing, New York: Plenum Publishers, 2002.
J. B. Kuo and J.-H. Lou, Low-Voltage CMOS VLSI Circuits, New York: Wiley-Interscience, 1999.
J. Monteiro and S. Devadas, Computer-Aided Design Techniques for Low Power Sequential Logic
Circuits, Boston: Kluwer Academic Publishers, 1997.
W. Nebel and J. Mermet, Low Power Design in Deep Submicron Electronics, Boston: Kluwer
Academic Publishers, 1997.
N. Nicolici and B. M. Al-Hashimi, Power-Constrained Testing of VLSI Circuits, Boston: Kluwer
Academic Publishers, 2003.
J. M. Rabaey and M. Pedram, Low Power Design Methodologies, Boston: Kluwer Academic
Publishers, 1996.
K. Roy and S. C. Prasad, Low-Power CMOS VLSI Circuit Design, New York: Wiley-Interscience, 2000.
E. Sánchez-Sinencio and A. G. Andreaou, Low-Voltage/Low-Power Integrated Circuits and Systems
– Low-Voltage Mixed-Signal Circuits, New York: IEEE Press, 1999.
W. A. Serdijn, Low-Voltage Low-Power Analog Integrated Circuits, Boston: Kluwer Academic
Publishers, 1995.
G. K. Yeap, Practical Low Power Digital VLSI Design, Boston: Kluwer Academic Publishers, 1998.
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Conclusion
•
Minimum dynamic power high speed circuits can be designed if gates
with variable input delays are used.
•
It is possible to suppresses all glitches without any delay buffers.
•
Power is reduced without reduction in speed and with very little increase
in area.
•
Linear program provides an effective design. Technique is scalable for
large circuits.
•
Experimental result show average power savings up to 58%
•
Future directions: Reduction of leakage power.
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