Transcript Document

The Usage of Focused Ion Beam(FIB) and Other
Diagnostic Equipment to Reduce Cycle Time and Cost on
System-on-Chip(SoC) Designs.
Raymond Lee, Tongxin Lu and Patrick Wolpert
FIB International, Inc.
Santa Clara California USA
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Traditional Cycle
Design/tapeout (12 weeks)
Fab
1st Silicon (4weeks)
Cost $500,000
Debug 1st Error/Re-tapeout (1 week)
A02 Revision Fab(3 weeks)
Cost $80,000
Debug 2nd Error/Re-tapeout (1 week)
B01 Revision Fab(3 weeks)
Cost $80,000
Debug 3rd Error/ Final tapeout (1 week)
Mass Production (4 weeks)
Cost $200,000
Software/Firmware
Product Engineering/System Test
(2 W eeks)
Engineering Sample and Final Product to Customer
Total Time: 31 weeks
Total Fab Cost:$860,000
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
New Cycle
Design/tapeout (12 weeks)
Fab
1st Silicon (4weeks)
Cost $500,000
Debug 1st Error/Probe/FIB Verification (1 week)
Debug 2nd Error/Probe/FIB Verification (1 week)
Debug 3rd Error/Probe/FIB Verification
Final tapeout (1 week)
FIB production of Engineering Samples (2 days)
Mass Production (4 weeks)
Cost $200,000
Software/Firmware
Product Engineering/System Test
(2 Weeks)
FIB Production of Cusomter Samples
(3 days)
Engineering Sample to Customer
Total Time: 22 weeks
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Final Product to Customer
Total Time: 23 weeks
Total Fab Cost:$700,000
FIB Introduction
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Column Design
DUT
lens 2 (objective)
octopole 2
octopole 1
Faraday cup
quadrupole 2
blanker
aperture
quadupole 1
lens 1 (condensor)
extractor
suppressor
emitter
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Theory of Operation
Die
Process
Chemistry
Injector
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Ion
Beam
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
What is a Mill?
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Ion Sputtering
Gas Enhanced Milling
Aspect Ratio
Beam Tail
Re-deposition
Acceleration Energy
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
What is a Deposition?
• Ion Induced Deposition
• Possible Metals
– Pt, W, Au, Mo, Al, Etc.
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Possible Insulators- Sio2
Over Spray
Resistance and Resistivity
Gas Nozzle
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Complex Repairs can be done
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
CAD Navigation
FIB Image with CAD Layout Overlay
CAD Layout Graphic
Superposition and local registration of top CAD layers to the FIB image corrects for
stage errors and allows accurate location of invisible buried conductors.
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
IC Repair
Instruction set for repair site 1
Gray frame shows area in Figure 2.
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Edit at repair site 1
Note only M4 is visible.
Probe Point with I-Dep Protection
6M device, probe-point to M2
I-Dep
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Probes in Chamber Applications
Analog & Mixed Signal Probing Applications:
DC levels and small AC can be captured
Effect on Word line boost voltage
proven with Analog m-Probes
Delay achieved with FIB Modification
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Probes in Chamber Applications
Probe radius
< 0.2 micron
Characterization Application:
Multiple probes can be manipulated in a narrow field
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
How to pick FIB location in order of importance
• 1.
Use upper level metal instead of lower level metal.
• 2.
Find the most open area for connection and cuts.
• 3.
Layout the FIB using the shortest connection
possible without overlapping any connections.
• 4.
Keep connection routing as far apart as practical.
• 5.
Provide detailed plot of the area of FIB work in
software format if possible or at least in color printouts
with alignment coordinates.
• 6.
Keep modifications as simple as possible.
(Remember the odds are working against you.)
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Sample Edit
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FIB International, Inc.
2003s Beijing International Microelectronics Symposium
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Coordinates
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2016
4042
4044
4043
2145
2129
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4324
4321
1883
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
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2139
2015
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4043
2016
2145
2129
2084
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4317
2034
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2034
4322
4319
1892
Sample Edit
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Not To
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FIB International, Inc.
2003s Beijing International Microelectronics Symposium
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Layout Info
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2003s Beijing International Microelectronics Symposium
Spare Gate Layout
VSS
VSS
VSS
Input
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Spare Gate Layout
VSS
VSS
VSS
Input
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Trade Offs
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Accessibility versus Performance
Difficulty versus Time
Complexity versus Functionality
Yield versus Cost
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Aspect Ratio Calculation
0.25 um
0.5
um
5 um
Figure A: Aspect Ratio
20:1
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Aspect Ratio Calculation
5 um
5 um
Figure B: Aspect Ratio
1:1
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
Aspect Ratio Calculation
5 um
5 um
Figure C: Aspect Ratio
3:1
FIB International, Inc.
2003s Beijing International Microelectronics Symposium
New Technical Challenges
Copper, Low K, and Flipchip
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2003s Beijing International Microelectronics Symposium
Copper Lines and Vias
FIB image of copper vias
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2003s Beijing International Microelectronics Symposium
SEM image of copper vias
Metal Re-growth Effect
Metal Exposure
Metal Cut
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2003s Beijing International Microelectronics Symposium
Metal Re-growth
IR Optical Image Through Silicon
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2003s Beijing International Microelectronics Symposium
Corner Alignment Point
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2003s Beijing International Microelectronics Symposium
Exposure and Connection
FIB International, Inc.
2003s Beijing International Microelectronics Symposium