Transcript WP10 Packaging - Silicon Carbide

The Future of European
SiC Power Electronics
Dr David Hinchley (Semelab)
& Dr Roger Bassett (Areva T&D)
© Semelab plc 2005
Introduction
• Infineon was the first company to produce commercial
SiC power semiconductor devices, launching a range
of Schottky diodes in February 2001.
• Coupled with ABB’s pioneering activity, Europe looked
well positioned to lead the world in SiC power
electronics.
• Four years later, the balance of power has firmly
shifted towards the US and Japan.
• Europe still appears focused on industrial market.
• US targeting defence applications and Japan
developing automotive products
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Industrial
• Low current Schottky
diodes were the first
technologically viable SiC
devices.
• Infineon launched 300V
and 600V range in 2001.
• Cree launched 600V diode
range in 2002, and has
since added 300V and
1200V devices.
• Principal applications are
PFC, SMPS and motor
drives.
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Infineon SiC Schottky Diode (Infineon Image)
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Industrial
• SiCED estimated $4M
worldwide market for SiC
Schottky diodes in 2004 [1].
Cree reported diode sales
of $3M in FY2004.
• Market growth slow as SiC
Schottkys are not a “plugin” replacements for
Ultrafast Si diodes.
• Need complete circuit
redesign to achieve
significant priceperformance advantage.
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Semelab prototype 1200V hybrid Si
IGBT/SiC Schottky diode module
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Defence
• US SiC R&D is dominated
by DoD projects, with Cree
as main subcontractor.
• ONR has identified SiC as
an key enabling technology
for the Electric Ship.
• Power demands for electric
ships expected to be up to
100MW. Volume and
weight of electrical systems
is critical.
• “Use of SiC devices in
marine applications may
seem inevitable.” [2]
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Defence
• WBST-HPE Project
• Phase I: 10kV 50A SiC PIN
diode & 10kV MOSFET.
• Phase II: 10kV 110A SiC
MOSFET/PIN diode
module.
• Phase III 15kV 110A SiC
IGBT/PIN diode modules.
• US Navy plans to use SiC
technology in nextgeneration aircraft carrier,
due for launch in 2013.
• SiC SSPS give weight
saving of 170 tons and
volume saving of 290m3.
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CVN-78 Aircraft Carrier (Northrop Grumman image)
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Transmission & Distribution
• 10kV devices developed for
marine applications will
also be used for land-based
electrical power distribution.
• SiC an enabling technology
in move towards renewable
energy sources and
distributed generation [3].
• SiC offers significantly
higher performance and
lower cost than Silicon
solutions for T&D, despite
higher per unit area device
costs [4].
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Automotive
• Toyota world leader in HEV
development. Predicts
sales of 300,000 units
(>$6bn) worldwide in 2006.
• Size and weight of power
electronic systems is critical
in HEVs. SiC is clearly an
enabling technology.
• Toyota now world leader in
SiC technology, producing
virtually defect free material
that makes high current
devices feasible [5].
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Toyota Prius (Toyota image)
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Automotive
• Europe remains obsessed
with diesel rather than
HEVs. “The future of diesel
is just beginning” – head of
Mercedes-Benz
• Unlike Toyota, no European
manufacturers have a
semiconductor capability.
• European automotive
companies relying on
component manufacturers
to develop SiC technology.
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Lexus RX400h Drive (Toyota image)
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Conclusions
• Europe first to enter SiC market but has surrendered lead.
• Industrial market is developing slowly. US and Japan
focused on longer-term defence and automotive
applications, where SiC is an enabling technology. T&D will
be a spin-off from defence work.
• DoD financing SiC development in US. Japanese R&D
programmes being funded by automotive industry, with
government support.
• Europe needs a SiC programme with budget >$10M per
year to remain competitive. Otherwise, reliant on US and
Japan for next-generation SiC power electronic systems.
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References
• [1] D.Stephani, “Today’s and tomorrow’s industrial utilization of
silicon carbide semiconductor power devices,” Revue de
l'Électricité et de l'Électronique, Feb 2004, pp. 23-24.
• [2] T.Ericsen, N.Hingorani & Y.Khersonsky, “Power Electronics and
future marine electrical systems,” IEE Petroleum and Chemical
Industry Technical Conference, 13-15 Sep 2004.
• [3] R.Bassett & J.Ballad, “SiC device offer improved reliability for
T&D applications,” CIRED 18th International Conference on
Electricity Distribution, Turin, 6-9 Jun 2005.
• [4] C.M.Johnson, “Current state-of-the-art and future prospects for
power semiconductor devices in power transmission and
distribution applications.” International Journal of Electronics, vol.
90, 2003, pp. 667-693.
• [5] D.Nakamura et al., “Ultrahigh-quality silicon carbide single
crystals,” Nature vol. 430, 26 Aug 2004, pp. 1009-1012.
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