Transcript TUNNEL DIODE AND RESONANT TUNNELING DIODE CHARACTERIZATION

NEW ANALYTIC DC MODELS FOR
TUNNEL DIODE
AND RESONANT TUNNELING DIODE
Chien M. Ta (SMA)
Fujiang Lin (IME)
Subhash R. Chander (IME)
SYMPOSIUM ON ELECTRONICS
June 2004
Outline
• Introduction
• Literature reviews
• Approach and tools
• Achievements
• Remarks and discussions
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Introduction
• Motivations
– UWB system design
– Currently, no RTD’s model in commercial EDA tools
• Objectives
– Analytic expressions for the I-V characteristic
curves of TD and RTD
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Reviews
What are the interesting features
of tunnel diode and resonant
tunneling diode?
I
Existing models
– Piecewise linear model
(Tai-Haur Kuo et al.,
Ralph P. Santoro)
Ip
– Polynomial fit model
(M. R. Deshpande et al.)
Iv
Vp
Vv
V
– Gaussian-exponential
combination
(Zhixin Yan and M.J.Deen)
I-V characteristic
• Negative differential resistance (NDR)
– Physics-based model
(J. N. Schulman et al.)
• Fast
• Temperature insensitivity
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Modeling
• Analytical approach
• Tools: MATLAB, IC-CAP
+
ID
VD
-
ID = f(VD)
+
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VD
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Methodology
I-V characteristic
measurement
Mathematic
analysis
Model proposal
Unsatisfactory
match
Simulation
Compare
Satisfactory match
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Final model
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TD modeling - Measurement
IC-CAP setup for measuring I-V characteristic
Measured I-V characteristic
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Analytic model
I D VD   I REV VD   I NDR VD   I FWD VD 
where
 
VD
I REV VD    I S _ REV exp 
  nREVVT
 
  1
 

 VD
I FWD VD   I S _ FWD exp
n
 FWDVT

I NDR VD   I P



  1


Ip
Iv
Vp
 AVP  2
 AVD  expAVD  VP   1
 I S _ FWD  I S _ REV
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Vv
V
I-V characteristic
Is_rev
nrev
Ip
Vp
A
Is_fwd
nfwd
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Simulation
Parameter
Extracted value
Optimized value
Is_rev
95.21 x 10-6
525 x 10-6
nrev
1.001
3.011
Is_fwd
90.51 x 10-6
73.16 x 10-6
nfwd
7.021
6.339
Vp
80 x 10-3
40.57 x 10-3
Ip
372.3 x 10-6
494.5 x 10-6
A
10
13.83
Final RMS error = 0.95%
Maximum error = 2.28%
I-V characteristic with extracted values
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I-V characteristic with optimized values
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New model for resonant tunneling diode
I D VD   I NDR VD   I FWD VD 
I
where
I NDR VD   AVD 
1

exp  VD 

 VD
I FWD VD   I S exp
n V

T





  1



Ip
Iv
V
I-V characteristic
A



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IS
n
10
Simulation
Parameter
Optimized values
A
652.7x10-9

2.719

16.92

2.593
IS
2.2248x10-19
n
0.7882
Simulation result
Final RMS error = 3.813%
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Symmetric characteristics for RTD
I D VD   I NDR VD   I FWD VD   I REV VD 

where I NDR VD   AVD  VD  exp  VD

 VD
I FWD VD   I S exp
 nV
T









1





 V
I REV VD    I S exp  D
 nVT

 
  1
 
Symmetric I-V characteristic
Simulation result
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One model for both TD and RTD ?
Parameter Optimized values
A
831.3x10-6

0.2883

1.091

16.67
IS
108.9x10-6
n
7.146
Recognizable deviation in
the reverse-biased region
(not very critical since the
devices are usually biased
in the NDR region)
June 04, 2004
Final RMS error = 1.03%
Not much degradation
compared to 0.95% RMS
error of the TD’s model
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Remarks, conclusion, and future works
• Remarks
– Excellent match between simulation and measurement: RMS error is less than
1% for TD and 3.8% for RTD
– Need accurate measurement, especially for ac modeling: de-embedding
technique
– Need modification to have scalability
• Conclusion
– The new DC model for the RTD is sufficient to describe the behaviors of the
devices
• Future works
– AC model expansion
– Implementation into EDA tools
– Coding in Verilog-A
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THANK YOU
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