Transcript Document
2011 ITRS Emerging Research Materials [ERM] December 11-14, 2011 Michael Garner – GNS Daniel Herr – SRC Paul Zimmerman, Intel Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 1 ERM Request of Korea ITRS Team • Identify areas of common interest with ERM • Identify new areas for potential ERM Focus • Identify material & interface requirements – Most critical requirements – Status of materials and interfaces to meet requirements • What is the best way to collaborate? – – – – Face to face meetings (Limited) Teleconferences (Morning in Korea: How early?) Polls* (Yes) Review documents or positions • 2013: Feedback on ERM Drafts Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 2 ERM Potential 2012 Focus Areas Device Materials • Memory Device Materials – Redox – Select Device Materials (Desirable Non-linearities) – Updates on other Memory Materials • Logic Device Materials – N-Ge & p-III-V Materials • Processing – Graphene & CNT Progress – Nanowire Progress • Beyond CMOS Materials – Spin Materials – Complex Oxide Properties – Other Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 3 ERM Potential 2012 Focus Areas Cont. • Litho Materials – Directed Self Assembly Progress – Novel Resist • FEP & PIDS Materials – Monolayer and Deterministic Doping – Gate leakage & interfaces • Interconnect Materials – Molecular Cu Barrier layers – Carbon Interconnect Materials (CNT & Graphene) • Contact Resistance Work in Progress: Not for Distribution • Resistance ITRS Winter Conference 2011 Incheon, Korea 4 ERM Potential 2012 Focus Areas Cont. • Assembly & Package Materials – Novel Polymers & Fillers • • • • Thermal conductivity Mechanical Properties (CTE, Modulus, etc.) Moisture Absorbance Adhesion Properties – High Thermal Conductivity Materials – Interchip Electrical Interconnects • Nanosolders (Low temperature) • CNT Interconnects – Energy scavenging Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 5 Next Steps • ERM needs to identify Research Goals vs. Production Goals Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 6 Selector Device • 2 Terminal Challenges – Materials compatible with memory cell – Non-linearity mechanism understood • On/Off ratio (High current density) • Thermal stability of mechanism • Reproducibility of mechanism – Interface films • Contact resistance (big issue!! How low can we go??) – Diode Switching Materials – Resistive • Metal Insulator Transition Work in Progress: Not for Distribution • Threshold switch ITRS Winter Conference 2011 Incheon, Korea 7 Back-up Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 8 ERD Materials • Memory Materials – ERD – STT for PIDS & FEP • Logic Materials – Alternate Channel Materials – Beyond CMOS: Charge Based – Beyond CMOS: Non-Charge & NonFET • Potential ERM Workshops Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 9 Memory Materials • Memory Materials • Storage Class Memory Materials • Select Devices Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 10 Memory Materials • • • • • • Ferroelectric Memory Nanoelectromechanical (NEMM) Redox RAM Mott Memory Macromolecular Molecular Work in Progress: Not for Distribution ITRS Winter Conference 2011 Incheon, Korea 11