Transcript 幻灯片 1 - Stanford Computer Forum

CMOS 60GHz Beamforming Circuit Design for Active Imaging Application
Saihua Lin, Ada Poon, Simon Wong
[email protected], [email protected], [email protected]
Introduction
Design Overview
• We use TSMC 65nm GP process
• Pros: VTH is low and noise performance is good
• Cons: no RF MOSFET model and no MIM cap
• Alternative: we can use MOM capacitor
• We need do RF MOSFET modeling
10
D
8
6
Gain
We plan to build a 60GHz beamforming transceiver
for active 3D imaging application. By sending and
receiving the signals directionally, we can increase the
spatial resolution and reduce the interference. It is also
able to recover the depth information of a target.
D
modified RF model
2
G
B
G
B
0
S
Tx signal
Antenna array
FPGA
Several techniques
we will use:
• Digital controlled
complex phase
shifting
• Sub antenna array
configuration
• 3D image
reconstruction by
using wide band
signal
• There are 4 configurations for Tx and Rx. Configuration A is not good
and now we use B. Finally we may use D.
• 2X2 beamforming receiver includes 4 LNAs and 4 variable gain phase
shifters. They are implemented by microstrip lines and CPW lines
• The same concept can be applied to transmitter. We use CPW lines
and parallel combining techniques to design PA
B
C
D
S
SubPA
TX
LNA Variable Gain
Phase Shifter
S
RX
RL
SubPA
PA Variable Gain
Phase Shifter
S
Antenna Design
S
DA
uPA
DA
uPA
S
• Use scripts to generate one antenna and antenna
S
arrays
• For 2X2 beamforming cirucit antennas, Rogers
materials will be used as substrate
• Simulated gain is about 6.9dBi on RO4003, 8mil board
DA
S
S
Sub-PA Structure
Chip Layout & Simulation
• TSMC 65nm GP process
• LNA alone : 7.2mA, 1V, NF=4.2dB, S21=17dB, S11 and S22<-15dB
Image Reconstruction
• LNA+ variable gain phase shifter : 32mA, 1V, NF=4.3dB, S21=29dB, S11 and
S22<-15dB
• 4 Channel circuit: 131mA, 1V, S21=37dB
• sub-PA: VDD=1V, PDC=66mW, Max PAE=22.9%, Psat=12.58dBm
• PA: VDD=1V, PDC=128mW, Max PAE=22.1%, Psat=15.4dBm, Gain=19dB
 j 4 k 2  k x2  k y2 z0 

2 D : f  x, y   FFT FFT2 D  s  x, y   e


 j 4 k 2  k x2  k y2 z0 
1 
3D : f  x, y, z   FFT3 D FFT2 D  s  x, y,    e


where s(x,y,ω) is the response at the transceiver, and
1
2D
s  x, y  
f  x, y, z  
e
2
2
 j 2 k  x  x  y  y  z02
• Tape out in 2010 January
• MSL, CPW, MOM, MOSFET Test structures
• sub-PA, 2 versions of LNAs, 2 versions of 1 channel & 4 channel circuit
dxdy
Where f(x,y,z) is the reflectivity function
2D FFT
3D FFT
Ref: Three-Dimensional Millimeter-Wave imaging for concealed weapon detection, TMTT 2001
2
10
Difference for an inductor
loaded amplifier
Rx/Tx architecture
A
0
10
Freq (GHz)
S
Rx signal
Mother board
-2
10
3D object
Silicon chip
original model
4