Transcript Josephson-Spannungsnormal

High sensitive bipolar- and high electron mobility
transistor read-out electronics for quantum devices. Quantenelektronik
N. Oukhanski and H.-G. Meyer
Contents:
 Introduction
 Bipolar-transistor read-out.
 PHEMT read-out
 Motivation
 Features and construction
 Measurement setup and procedure
 Results
 Verification
 Discussion
 Summary
1
Introduction
Quantenelektronik
Already known read-out technique for quantum devices.
Bipolar-transistor read-out.
Easy to match Rsensor with Rnoise of amplifier, TN~80 K.1,2
FET read-out.
Minimum TN~2 K @ ~10 kHz, owing RF energy losses.3
SQUID-amplifiers.
Minimum TN~1–5 hf/kB. Complex in tuning and setup.4
Pseudomorphic High Electron Mobility Transistor read-out.
TN25 K (25 hf/kB)@~20 GHz
for ambient temperatures of 1020 K.5, 6, 7
1. N. Oukhanski, V. Schultze, R. P. J. IJsselsteijn, and H.-G. Meyer, Rev. Sci. Instrum. 74, 12, 5189 (2003).
2. N. N. Oukhanski, R. Stolz, V. Zakosarenko, and H.-G. Meyer, Physica C 368, 166 (2002).
3. P. Horowitz and W. Hill, Cambridge Univ. Press, 1989, 2nd ed. v. 2, pp. 53–66.
4. M. Muck, J. B. Kycia, and J. Clarke, Appl. Phys. Lett. 78, 967 (2001).
5. J. Bautista, J. Laskar, P. Szydlik, TDA Progress Report 42-120, 1995.
6. J.E. Fernandez, TMO Progress Report 42-135, pp.1-9, November 15, (1998).
7. I. Angelov, N. Wadefalk, J. Stenarson, E. Kollberg, P. Starski, H. Zirath, IEEE MTT-S, (2000).
2
Bipolar-transistor read-out.
Quantenelektronik
Main features of designed directly-
coupled bipolar-transistor electronics
Input voltage white noise level is about 0.32 nV/Hz1/2.
Flicker noise corner frequency as low as 0.1 Hz.
Current white noise level 6.5 pA/Hz1/2.
Wide working temperature range: 77-350 K.
One-chip FLL unit solution is resistant to ambient
condition, i.e. humidity, convection flows, and
temperature radiation.
Very low thermal drift: 30 nV/K (from 15 to 800C).
high symmetrical differential circuits for all parts of the FLL-unit used.
full design optimization using simulation with software tool
SQUID
of MicroSim-PSpice.
Gain-bandwidth product fGBP=400 MHz.
Three point SQUID biasing possible to
reduce voltage drift on the connecting
wires to the SQUID.
Power consumption: 80 mW at ±1.5 V.
Feedback
coil
Prototype (left) and integrated
version of the FLL unit (right).
FLL Electronics
2-d stage
1-st
stage
Control Unit
Integrator
RINT
CINT
Buffer
Buffer
AD829
G20
V+
V
current source
Out
ROFF
Offset
RB
Bias
DC
RF1
current source
RFB1
Flux DC
RF2

H+
Heater
H-
FLL/
Reset
RFB2
current source
Heater
-U
+U
Functional diagram of the read-out electronics
3
Bipolar-transistor read-out.
1/2
SV [V/Hz ]
fcorner= 0.1 Hz
0.32 nV/Hz
100p
100m
1
10
1/2
100
1k
10k
Frequency [Hz]
-3
10
-12
10
-4
10
-13
10
-5
10
-14
10
-6
10
-15
10
7
10
-16
1/2
1/2
1.7 uФ0 / Hz , 1.44 fT / Hz
10
1/2
-7
10
-1
10
0
10
1
2
3
10 10 10
Frequency, [Hz]
4
10
5
10
6
1/2
10
1/2
-2
1/2
10
[ T / Hz ]
Voltage noise spectral density with respect to
the input of the integrated electronics at 300 K.
Field noise,SB
Flux and field noise spectrum of SQUID magnetometer
with sensitivity B/=0.85 nT/ 0 in three layer shielded
can. Maximum system dynamic range in FLL mode 50 0.
1n
Flux noise,SФ , [ Ф0 / Hz ]
The maximum bandwidth of 6-8 MHz
was measured with several types of lowTc dc-SQUID magnetometers and
gradiometers.
Maximum slew rate is in the range
3-9 M0/s.
Minimum measured white flux-noise
level with SQUID magnetometer of 1.21.7 0/Hz1/2 (1-1.4 fT/Hz1/2).
A maximum system dynamic range with
the SQUID magnetometer is about
155 dB (50 0).
Available with high frequency ac-bias
technique with frequency up to 10 MHz.1
Quantenelektronik
4
PHEMT read-out
Quantenelektronik
 Already known features.
Based on the AlGaAs/InGaAs/GaAs heterostructure.
Offers a high transfer coefficient in the microwave frequency range,
owing to the high density and mobility of 2DEG along the layer’s
heterojunctions (due to an effect of electron space confinement).
The unique noise characteristics are derived from the 2DEG’s high
electron mobility, which is dependent on the electrons scattering
process in heterojunctions.
Already
measured
noise
temperatures
TN25K
(25 hf/kB)@~20 GHz for ambient temperatures of 1020 K.
Originally, expected that the HEMTs would be unsuitable for
sensitive measurements at frequencies below 100 MHz, because of
the high corner frequency of the flicker noise.
5
Motivation
Quantenelektronik
 Desirable area of application
Areas, which need highly sensitive measurements, such as the
characterization of qubit circuits,8-11 bolometric measurements,12,13
SQUIDs2 etc., compel us to search for more sensitive readout
From RF generator
methods and devices.
USUPP
Out
The principle scheme of resonant circuit Qubit
readout with PHEMT amplifier. Circuit
of interest is inductively coupled to the
high-Q parallel resonant circuit, with the
LCR
directly involved through a short line
T380 mK U
PHEMT.
G1
GROOM
T=300 K
UG2
UG3
8. J.E. Mooij, T.P. Orlando, L. Levitov, Lin Tian, van der Wal, S. Lloyd, Science 285, 1036, (1999).
9. E. Il’ichev, V. Zakosarenko, L. Fritzsch, R. Stolz, H. E. Hoenig, H.-G. Meyer, A.B. Zorin, V.V. Khanin, M. Götz, A.B. Pavolotsky, and J.
Niemeyer, Rev. Sci. Instr., 72, 1882, (2001).
10. E. Il’ichev, Wagner Th., Fritzsch L., Kunert J., Schultze V., May T., Hoenig H. E., Meyer H.-G., Grajcar M., Born D., Krech W., Fistul M.,
Zagoskin A. Appl. Phys. Lett., 80, 4184, (2002).
11. E. Ilґichev, N. Oukhanski, A. Izmalkov, Th. Wagner, M. Grajcar, H.-G. Meyer, A. Yu. Smirnov, Alec Maassen van den Brink, M. H. S. Amin,
and A.M. Zagoskin, Phys. Rev. Lett. 91, 9, 097906 (2003).
12. D.-V. Anghel and L. Kuzmin, Appl. Phys. Lett. 88, 293-295 (2003).
13. L. Kuzmin, Proc. Thermal Detector Workshop, Goddard SFC, Washington DC, (2003), to be published.
6
Features of construction
Quantenelektronik
Two amplifier version, based on the
commercial PHEMT ATF-35143, have a
common layout and were assembled on a
printed board of 33x13 mm2 (see Fig. 2).
Three-stage construction is used to provide
the best conditions for minimizing the
input noise temperature and back-action to
the tank circuit (in the first stage),
maximizing the gain factor (second stage),
and impedance matching to the input and
output lines (first and third stage).
Photo of amplifier
To decrease the power consumption and improve low frequency noise performance:
We reduced the transistor’s drain voltage to 0.1 V (2 % of Vds) and the drain current to
200 A (0.3 % of Idss).  the first stage power dissipation was only 20 W.
All resistances in the amplifier’s signal channel were replaced by inductances.
To protect the amplifier from external and self interferences we used symmetric design.
The amplifier was thermally connected to the helium-3 pot of the commercially
available refrigerator, “Heliox 2” by Oxford Instruments with temperature below
400 mK.
7
Measurement setup and procedure
Quantenelektronik
Measurements with resistor at T0.38 K
To provide a good thermal contact between the
source resistor RIN and 3He pot, a copper finger
was used.
Noise
 S V_COM

TN  T 
 1
 4kBTRS 
temperature3, 14
S V_COM 
S V_OUT
50 Ohm
trans. line,
K5(f)=
0.042dB
loss
@ 2.5MHz
50 Ohm
divider,
K4(f)=
-67.113 dB
trans. coeff.
@ 2.5MHz
SV
RIN
10 k
USUPP
PHEMT Amplifier,
with gain K3(f)
Network
Analyser
HP4396B
K1  f K 2  f K 3  f 
SVCOM- input voltage noise spectrum
 Measurements with resonant circuit
50 Ohm
trans. line,
K1(f)=
0.042dB loss
@ 2.5MHz
UG1
UG3
Room
with gain K2(f)
Out
T380 mK
2πfC
The simplified scheme of the amplifier and setup for the noise
temperature measurements with resistor (a) and resonant circuit (b).
UG2
temperature amplifier
 Active resistance of resonant circuit at resonant (a)
frequency
Q
RS ( f 0 ) 
T380 mK
PHEMT
amplifier
(b)
LCR
14. N. Oukhanski, M. Grajcar, E. Il’ichev, and H.-G. Meyer, Rev. Sci. Instrum. 74, 1145 (2003).
8
Results
Quantenelektronik
1st amplifier version with resistor
Measured upper limit of noise temperature
in optimistic case (assuming that RS(f0)
associated only to dissipation noise of the
tank circuit and amplifier) is
TN(f0)5525 mK (4018 hf/kB).
1
1n
b
a
10p
TN
100p
0,996
1,000
1,004
N orm alized Frequency, f/f 0
100m
1p
100f
TN min
10m
1m Error interval
1/2
(Q=1510,
f0=28.6 MHz, L=66 nH, C=470 pF, RS(f0)18 k)
TN, TN MIN [K]
With resonant circuit
10
[A/Hz ]
TN MIN7050 mK5035 hf/kB@30 MHz, RN21k
1/2
minimum noise temperature3 is
10f
1/2
SI
SI
 estimated
Comparison of the voltage noise for the 1st version of
cryogenic amplifier with that for the standard room
temperature design and rated parameters.
1/2
RN=SV1/2/SI1/2, SI1/2=(4kBRSTN-SV)1/2/RS,
SV, [V /H z ]
Measured minimum TN100 mК@1-4 MHz
with 10 k input resistor.
For used in this case method3,14
TN MIN(RS=RN)=SV1/2SI1/2/2kB, where RS-real part
of input resistance, noise resistance
1f
1M
10M
Frequency [Hz]
Measured with resistor TN and calculated current noise
SI1/2 of 1st amplifier version. TN MIN(RS=RN) – estimated
minimum noise temperature. Inset are the noise of tank
circuit, coupled to the input of the 1st (a) and 2d (b)
amplifier version.
9
Results
Quantenelektronik
Back-action noise:15 Tba=TN-Tad
Gate
Cgs
Rg
Additive component Tad (measured without input source),15
originate mainly from drain noise temperature (Td>>TTg),16 back- Tg
gmVgs
Rgs
action component Tba under the influence of drain fluctuations on
the tank circuit by means of parasitic capacitor Cgs.
R
For 1st amplifier version Tba~15 mK
 S V_COM  S V 
Tba  T 
 1 Sv-measured with shorted input voltage noise.
 4k BTRS

Very high sensitivity applications, where a drain current and/or
voltage fluctuation can increase the gate temperature, or can
decrease the decoherence time of an input signal, impose strong
requirements on Tba
2d amplifier version with resonant circuit
(Q=2080, f0=26.77 MHz, L=177 nH, C=200 pF, RS(f0)=61.8 kOhm,)
 Assuming RS(f0) associated only to dissipation noise:
TN(f0)7330 mK at ambient temperature T=370 mK
Back-action noise temperature: Tba=TN-Tad~10 mK
Drain
Cgd
Rd
Rds
Td
s
Source
Simplified
small-signal
circuit diagram of PHEMT.
T380 mK
USUPP
LC R
UG1
Variant of the 1st stage
with the lowest designed
back-action.
15. A. Vinante, M. Bonaldi, M. Cerdonio, P. Falferi, R. Mezzena, G. A. Prodi, and S. Vitale, Classical and Quantum Gravity, 19, Is. 7, p. 1979 (2002).
16. M. W. Pospieszalski IEEE Trans. on Microwave Theory and Techniques, 37, no. 9, pp. 1340-1350 (1991).
10
Verification
Quantenelektronik
To be convinced in our estimation we used amplifier noise model based on L C RS
the definition of voltage and current noise, as SV=2kBTNRN and
SI=2kBTN/RN.17 Assuming RS(f0) associated only to dissipation noise, 
noise temperature:
TN(f0)=(SVCOM(f0)-4kBTRS)RN/(2kB(RS2+RN2))(SV SI)1/2/(2kB).
Measurements procedure
TN=T(SV_COM/(4kTRS)-1)
TN=T(SV_COM/(4kTRS)-1)
With resonant circuit
SV=2kBTNRN, SI=2kBTN/RN
With resonant circuit
TN for 1st version
7050 mK@30 MHz
with 10 kOhm resistor
5525 mK@29 MHz
with Rs(f0)=18 kOhm
4825 mK@29 MHz
with Rs(f0)=18 kOhm
SV
G
SI
RN
21 kOhm
TN for 2d version
-
RN
-
30 kOhm
7330 mK@27 MHz
with Rs(f0)=62 kOhm
5330 mK@27 MHz
with Rs(f0)=62 kOhm
140 kOhm
Suppose the worst case, when RS(f0) associated with dissipation noise of R L C R
d
c
SV G
common resistance (Rd and Rc) and contribution of damping cold resistance
from amplifier Rc. Hence SI=(SVCOM-SV)/RS-4kBT/Rd. Taking into account:
SI
1.Maximum quality factor, measured between available tank circuits, with
both system (Q2040, f027 MHz, C=100 pF and Q3340, f025 MHz,
C=100 pF correspondingly).
2.Absence of voltage flicker noise in the working frequency range on the ceramic capacitors which we
used in our resonant circuits.
 The pessimistic value for the noise temperature in this case TN(f0)=(SVSI)1/2/(2kB):
TN(f0)=110 mK, and 170 mK for the 1st and 2d variant of electronics correspondingly.
17. T. Ryhanen and H. Seppa, J. Low Temp. Phys. 76, 287 (1989).
11
Discussion
Quantenelektronik
By taking into account tank circuit quality
factor Q=2080 (2d variant of amplifier), this
setup gives us an opportunity to perform
quantum
level
measurements
with
periodical signals, even if the coupling
coefficient of the thank circuit to the sensor
is less than 1.
 It is necessary to note, that available in
Measurements with Qubit, TN270 mK,
real condition tank circuit impedance can be
amplifier ambient temperature ~2 K
far from optimum value, which can
noticeably increase setup noise temperature.
The second version of the amplifier placed at temperature 2 K was successfully
employed for different quantum measurements.11, 18, 1 9
By taking into account system bandwidth f=100 MHz and rating quality factor
Q1000@30 MHz estimated available number of cannels 1000 with
f100 kHz.
1.5n
1.4n
T circuit
Sv
1/2
1/2
, [V/Hz ]
1.3n
1.2n
1.1n
1.0n
900.0p
800.0p
700.0p
600.0p
Without high frequency power
500.0p
6.280M
6.282M
6.284M
6.286M
6.288M
6.290M
6.292M
Frecuency, [Hz]
18. M. Grajcar, A. Izmalkov, E. Il'ichev, Th. Wagner, N. Oukhanski, U. Huebner, T. May, I. Zhilyaev, H.E. Hoenig, Ya.S. Greenberg, V.I. Shnyrkov, D. Born, W.
Krech, H.-G. Meyer, Alec Maassen van den
Brink, and M.H.S. Amin, Phys. Rev. B 69, 060501(R) (2004).
19. A. Izmalkov, M. Grajcar, E. Il'ichev, N. Oukhanski, Th. Wagner, H.-G. Meyer, W. Krech, M.H.S. Amin, Alec Maassen van den Brink, A.M. Zagoskin,
Europhys. Lett., 65 (6), pp. 844–849 (2004).
12
Summary
Quantenelektronik
Integrated version of direct coupled bipolar-transistor dc SQUID
read-out electronics with minimum noise temperature TN=80 K is
presented.
Very low thermal drift (30 nV/K) of the electronics and the low
corner frequency of flicker noise (0.1 Hz) is useful for realization
of long-time experiments.
Wide working temperature range of read-out electronics (77–
350 K) provides system reliability at any climatic conditions.
High slew rate (up to 9 M0/s) and sensitivity (0.32 nV/Hz1/2),
large bandwidth (6 MHz) and system dynamic range at using of
long cable between the sensor and electronics (about of 1–2
meters) well suited for high-precision measurements at unshielded
conditions.
13
Summary and acknowledgment
Quantenelektronik
Two versions of a cryogenic PHEMT amplifier designed for quantum device
readout and tested at an ambient temperature 380 mK.
Noise temperature of the 1st amplifier version is below 11050 mK
(8040 hf/kB)@28.6 MHz, estimated from the noise of a coupled input tank
circuit with resistance RS(f0)18 kOhm at the resonant frequency.
 Its minimum input voltage spectral noise density is 200 pV/(Hz)1/2 and the
corner frequency of the 1/f noise is close to 300 kHz.
For the amplifier with the lowest designed back-action, the noise temperature
below 17070 mK (15060 hf/kB)@26.8 MHz was measured when coupled
to an input tank circuit with RS(f0)62 kOhm.
The amplifiers’ power consumption is in the range of 100–600 W.
The second version of the amplifier with ambient temperature 2 K was
successfully employed for different quantum measurements.
The authors gratefully acknowledge the discussions and help on the different
stages of work of H. E. Hoenig, E. Il'ichev, V. Zakosarenko, R. Stolz, M.
Grajcar, Th. Wagner, A. Izmalkov, S. Uchaikin and R. Boucher.
14