Transcript Electronics for the LHCb Outer Tracking Detector

Electronics for the LHCb Outer
Tracking Detector
Dirk Wiedner
Physics Institute
University of Heidelberg
Germany
Electronics for the LHCb Outer Tracking Detector
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LHCb
CERN
Switzerland
Electronics for the LHCb Outer Tracking Detector
Tracking:
Impact measurement
2
Outer Tracker
Ionising
particle
200 μm resolution
Electronics for the LHCb Outer Tracking Detector
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Electronics Placement
TFC
L1 ECS
HV
GOL
TFC
LV
Fibers to L1 Buffer
Fibers to L1 Buffer
Fibers to L1 Buffer
LV Reg
OTIS
ASDBLR
tot. dose < 10krad
TFC
ECS
Power (HV,LV)
Fibers to L1 Buffer
ECS
Power (HV,LV)
OTIS
ASDBLR
ASDBLR
HV boards
Front end box:
128 channels
16 ASDBLR amplifiers
4 OTIS TDC chips
TFC
ECS
Power (HV,LV)
TFC
ECS
Power (HV,LV)
Outer Tracker: 3 Stations
56000 channels
432 FE boxes = 432 optical links
1 optical link: 1.6 Gbit/s
Electronics for the LHCb Outer Tracking Detector
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Electronics Scheme
Amplifier
ASD
200 fC
TDC
OTIS-TDC
L0 Buffer
optical link
0-Supp.
GOL
DAQ
(PCs)
~100m
threshold
Fast
Control
FE Electronics on the detector
Electronics Service Box
Electronics for the LHCb Outer Tracking Detector
counting room
Power /
Control
5
Electronic Components in
FE-Box
x1
GOL
TDC
ASD
ASD
HV-Board
x4
TDC
ASD
•
ASD
HV-Board
x8
x4
•
•
•
GOL: Gigabit Optical Link
OTIS: Outer Tracker Time
Information System
ASD : Amplifier Shaper
Discriminator
HV: High Voltage
432 FE-Boxes
Electronics for the LHCb Outer Tracking Detector
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HV-Boards
R=1 MΩ
C=330pF
Z=316Ω
• 32 channels / board
• Compact capacitors
• Operation in air
casting/embedding of caps
Capacitors:
JOHANSON 302R29W331KV4E
Max. Volt.: 4kV
Size: 4.6 x 2 x 1.5 mm3
Electronics for the LHCb Outer Tracking Detector
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Casting embedding Technology
Severe technological problems in the beginning:
• Imperfect soldering procedure
• Hand re-work
Mechanical stress and
damage of caps
Meanwhile (several iterations) technology is well understood
Electronics for the LHCb Outer Tracking Detector
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Production Testing
56 HV boards V5 *:
Layout
tested for 48 h @ 70oC, 2500V
Hv boards
• 2 failing cap (Ileak > 100A)
duct for HV cabling
• 6 more boards discarded
Hv tester
oven
• All other caps: < 1nA / cap
Satisfying result
duct for leakage output
*) all channels carefully monitored
during the production
Yield of 80% expected, 85 % yield reached already
Electronics for the LHCb Outer Tracking Detector
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TDC
ASD Board
•
Ground springs
HV Board
Amplifier Shaper Discriminator
with Base Line Restoration
•
~10 ns shaping time
•
1 fC sensitivity
•
8 channels
•
Designed for ATLAS detector
•
Total need of 7 200 chips
•
28 896 chips available
Electronics for the LHCb Outer Tracking Detector
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ASDBLR Testing
Eff
•
Chips categorized:
•
pre-selection:
0.5
Half Efficiency
Vthr[50%]
•
–
current consumption
–
broken channels etc.
–
→62.2% accepted
performance:
–
threshold spread checked
–
→32 % best chips chosen
Electronics for the LHCb Outer Tracking Detector
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OTIS TDC
•
•
32 channel ASIC TDC
1 ns drift time
resolution
•
75 ns max. drifttime
•
single and multi-hit
•
radiation tolerant
•
on chip L0 buffer
•
2000 TDCs needed
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OTIS Wafer Test
good
•
•
not processed
47 wafers received
11/05
A wafer includes:
–
78 processed OTIS 1.2
–
78 processed OTIS 1.3
Electronics for the LHCb Outer Tracking Detector
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Test Procedure
Power consumtion ok? (I<300 mA @ 2.5V)
Slow control test: Check position ID and registers
FPGA test:
•Chip alive?
•Header ok?
•All channels alive?
•Measurement of Differential No Linearity for ch. 0,15,16,31
•DNL < 2.0 bins* for OTIS 1.2
*) 1 bin = 0.39 ns
•DNL < 1.9 bins* for OTIS 1.3
•L0 buffer overflow recognized?
•DACs functional
Electronics for the LHCb Outer Tracking Detector
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Wafer Test on FPGA
•
>4 000 000 data sets per chip (7332 chips)
•
1 MHz data rate (288 MBit/s)
•
Data analysis on FPGA
•
Histograms on FPGA internal memory
–
Drift time
–
Event counter
–
Channel map
Electronics for the LHCb Outer Tracking Detector
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Wafer Test Results
Overall yield:
–
–
–
80
75
70
OTIS 1.2: 88.65%
→3250 functional
OTIS 1.3: 91.53%
→3284 functional
~2000 chips needed
65
60
55
50
good Chips
•
OTIS-TDC Yield
45
OTIS 1.2
OTIS 1.3
processed
40
35
30
25
20
15
10
–
Chips are inked and
sawed
5
0
Row 2
Row 3
Row 4
Row 5
Row 6
Row 7
Electronics for the LHCb Outer Tracking Detector
Row 8
Row 9
Row 10
Row 11
Row 12
Row 13
Row 14
Wafer
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OTIS Board
GOL/Aux
•
Chip on board technology
•
Cooling:
–
•
ASD
100 μm copper plane
Noise reduction:
–
Air coils
–
Differential in and outputs
ASD
Electronics for the LHCb Outer Tracking Detector
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GOL-Auxiliary Board
•
GOL 1.0 serializer for
128 straw channels
•
QPLL 3 clock filter
•
TFC signal distribution
•
I2C signal distribution
•
LV-power regulators
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GOL-AUX challenges
•
Oscillating regulators:
–
•
Bad clock from outside:
–
•
extra 100 μF at in and outputs
Radiation hard clock filter with <45 ps jitter pk-pk
Rad hard differential signal distribution:
–
Resistor network for current division
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GOL-Aux Testing
•
checks:
–
–
–
–
LV ripple (<40 mV)
Fast and slow control
distribution
TDC data after optical
transmission
Eye pattern (optical)
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Front End Tester
•
Test of full FE-box
–
Amplifier threshold
characteristics
–
50mV deviation exp.
–
Timing performance
–
0.4 ns RMS typ.
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Optical Link
L0 Buffer
0-supp.
GOL
O-Rx
ASD
TDC
DAQ
~100m
200 fC
bias
L0 BX
FE Electronics on the detector
HV LV
TFC ECS Cooling
Electronics Service Box
Electronics for the LHCb Outer Tracking Detector
counting room
Power /
Control
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O-RxCard
TLK
2501
TLK
2501
TLK
2501
TLK
2501
200 pin
Samtec
QTS-100-03
LED
•
•
•
•
12 way optical
receiver
commercial
deserializers
high density
connector to TELL1
19.2 GBit/s
m
o
n
i
t
o
r
SNAP12 spec.
c
o
n
t
r
o
l
O-RxCard
TLK
2501
TLK
2501
power
QUA
RTZ
TLK
2501
TLK
2501
TLK
2501
TLK
2501
TLK
2501
TLK
2501
200 pin
Samtec
QTS-100-03
power
Electronics for the LHCb Outer Tracking Detector
c
o
n
n
e
c
t
o
r
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c
o
n
n
e
c
t
o
r
O-RxCard
•
•
O-RxCard now LHCb
wide used
Final production carried
out by Tsinghua University
–
All boards produced
–
Testing ongoing
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O-RxCard BERT
•
•
Bit error rate tested vs.
optical attenuation
6 dB extra attenuation Ok
1.00E-08
< 10 errors in 1012 Bit at
9 dB attenuation in
production test
BER(3 sigma) vs. add. optical power
1.00E-07
BER (3? Limit)
BER(3σ)
•
1.00E-06
1.00E-09
1.00E-10
1.00E-11
1.00E-12
-10
-8
-6
-4
-2
0
attenuation total
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e- Test Beam
Feb. 2005, DESY Hamburg
electron beam 6 GeV
readout
beam
silicon tracker
scintillator
+scintillator
module
layer
1
2
01 23
3
45
4
67
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Efficiency
1
0.8
0.6
0.4
Efficiency [%]
Efficiency
Efficiency vs. High Voltage
0.2
0
0 0.5 1 1,5 2 2,5 3
Radius[mm]
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Resolution [μm]
Track resolution vs. HV
2,9 fC Schwelle
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Test beam conclusion
•
resolution < 200 μm
•
Efficiency > 98%
•
Complete read out chain with 4 FE boxes used
•
Readout fully functional, performance as
specified
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Summary
•
•
•
Excellent performance of full readout electronic
All custom amplifiers and TDC produced and
tested, good yield
Production of all electronic boards has started,
7% of each type of board produced and tested
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Outlook
Oct
nov
dec
jan
feb
mar
Module Finishing, SModule Coupling etc.
metallic structure
production
C-Frames Assembly @ NIKHEF
apr
may
jun
2006
aug
sep
oct
nov
Ship to
CERN
Install
aug
sep
oct
nov
Installation @ CERN
FE Production, Assembly and Test @
NIKHEF
2005
jul
Installation @ CERN
Start LHCb global commissioning
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