Transcript Development of 10 kV 4H-SiC MOSFET device. Potential Outcomes
Development of High Voltage 4H-Silicon Carbide Power Devices
Dr. Craig A. Fisher Affl.: School of Engineering, University of Warwick Research Fellow on the UPE Project (Devices theme).
Project Plans & Objectives
• • • Development of edge termination structures for 10 kV 4H-SiC power devices.
Development of reliable ohmic contact solutions for high power density / high temperature applications.
Development of 10 kV 4H-SiC MOSFET device.
Potential Outcomes & Exploitation Plans
• • The 10 kV 4H-SiC MOSFET can potentially transform a range of power electronics applications.
Opportunity to generate IP using unique processing capability at Warwick.
Input from the PE Community
• • Input from other researchers in the semiconductor field would be useful Have a particular interest in high-k dielectrics for MOS gates and surface passivation.