Development of High Voltage 4H-Silicon Carbide Power Devices

Dr. Craig A. Fisher Affl.: School of Engineering, University of Warwick Research Fellow on the UPE Project (Devices theme).

Project Plans & Objectives

• • • Development of edge termination structures for 10 kV 4H-SiC power devices.

Development of reliable ohmic contact solutions for high power density / high temperature applications.

Development of 10 kV 4H-SiC MOSFET device.

Potential Outcomes & Exploitation Plans

• • The 10 kV 4H-SiC MOSFET can potentially transform a range of power electronics applications.

Opportunity to generate IP using unique processing capability at Warwick.

Input from the PE Community

• • Input from other researchers in the semiconductor field would be useful Have a particular interest in high-k dielectrics for MOS gates and surface passivation.