Transcript ULSI 簡介與應用

半導體原理及應用 (II)
陳志方
國立成功大學 電機工程學系
1/15/06
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Outline
• ULSI 簡介與應用
• ULSI 製程簡介
• ULSI 之未來趨勢
• ULSI 製程影片觀賞
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ULSI 簡介與應用
• Semiconductor
• Semiconductor devices
– MOSFET
– CMOS
• Integrated circuits
• Applications of IC
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Semiconductor
• Conductor, insulator
• Semiconductor:  = 10–2 ~ 109 ohm-cm at room T
– element: Si, Ge… (IV)
– compound: GaAs… (III-V), ZnS… (II-VI), SiC… (IV-IV)
• Semiconductor devices:
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Market Share in Semiconductor Devices
• Si-based (especially MOSFET) devices are dominant
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MOSFET
M: Metal (or n+-poly, p+-poly)
O: Oxide (gate oxide)
S: Semiconductor (p-Si or n-Si)
FET: Field effect transistor (Ey, Ex)
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CMOS
• Complementary MOS = NMOS & PMOS pair
(CMOS = NMOS + PMOS)
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IC
• Integrated Circuits: composed of many devices on a chip (die)
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SSI: small scale IC
MSI: medium scale IC
LSI: large scale IC
VLSI: very large scale IC
ULSI: ultra large scale IC
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Application of ULSI
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ULSI 製程簡介
• IC fabrication flow
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Crystal growth
Cleaning
Thin film deposition
Oxidation
Diffusion
Ion implantation
Etching
Lithography
Metallization
Planarization
• CMOS process flow
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IC Fabrication Flow
• 電路設計  IC製造  封裝  測試
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Crystal Growth
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Wafer Size
• size => number of chips , cost 
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單晶體 vs. 多晶體
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多晶矽原料
SiO2 + 2C  Si + 2CO
(純度98%)
Si + 3HCl  SiHCl3 +
H2
(蒸餾去除不純物)
SiHCl3 + H2  Si + 3HCl
(純度99.999999999%) “11個9”
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長晶爐
(上升: 0.3~10mm/min
旋轉: 2~20rpm)
(避免Si在
高溫氧化)
SiO2  SiO + O
(脫氧)
(熱場)
(液態表
面溫度)
(控制:
晶棒直徑
上升速率
液面溫度)
(固定液面高度)
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晶圓成形
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RTP
• Rapid thermal processing
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Diffusion
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Ion Implantation
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Etching
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ULSI 之未來趨勢
• Moore’s law
• Advanced MOSFET
– Physics
– Material
– Technology
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Challenges in IC
• Moore’s law: number of transistors 2X/18~24 months
=> density , performance , functionality  (SOC)
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Technology Roadmap
• Device dimension  <= physics + material + technology
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Recent Trend of MOSFET
• Trend of advanced MOSFET
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High-k (C = A/d)
Low-k
Cu (R = l/A)
Metal gate
Strain (m = q/m*)
浸潤式微影技術
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