Transcript Process parameter as of 01_07_2014

Tecport E-beam Evaporator
Process parameters.
List of materials which have been evaporated:
METALS:
1.
2.
3.
4.
5.
6.
Aluminium.
Chromium.
Gold.
Titanium.
Hafnium.
Nickel.
OXIDES:
1. Aluminium Oxide.
2. Silicon Dioxide.
3. Titanium Oxide.
4. Indium – Tin Oxide.
Aluminium (Al)
Process parameter:
Base pressure:
2.1E-6 Torr.
Deposition pressure:
2.3E-6 Torr.
Rate of deposition:
Measured thickness (Dektak):
Annealing:
5 Å/s.
292.32 nm.
Annealed at 450°C, with forming gas.
Sheet Resistance before annealing:
0 .124 Ω/□.
Sheet Resistance after annealing:
0.121 Ω/□.
Resistivity:
0.035 µΩ m.
Al - XRD Data:
Intensity (a.u)
As-deposited
Annealed
Al (220)
Al (200)
Al (111)
Si
Al (311)
20 30 40 50 60 70 80 90 100
2
Chromium (Cr)
Process parameter:
Base pressure:
3.0E-6 Torr.
Deposition pressure:
2.2E-6 Torr.
Rate of deposition:
1 Å/s.
Measured thickness (Dektak):
52.26 nm.
Sheet Resistance.
117 Ω/□.
Resistivity:
52.26E-9 X 117 = 6.1 µΩ m.
Cr - XRD Data:
Gold (Au)
Process parameter:
Base pressure:
4.2E-6 Torr.
Deposition pressure:
8.89E-6 Torr.
Rate of deposition:
Measured thickness (Dektak):
Sheet Resistance:
Resistivity:
1 Å/s.
187.535 nm.
0.258 Ω/□.
187.535E-9 X 0.258 = 0.048 µΩ m.
Au - XRD Data:
Titanium (Ti)
Process parameter:
Base pressure:
2.0E-6 Torr.
Deposition pressure:
2.17E-6 Torr.
Rate of deposition:
4 Å/s.
Measured thickness (Dektak):
60 nm.
Sheet Resistance:
Resistivity:
17.5 Ω/□.
17.5 X 60E-9= 1.05 µΩ m.
Ti - XRD Data:
Intensity (a.u)
Ti (111)
Si
10
20
30
40
2 
50
60
Ti atomic concentration (%)
O2 atomic concentration (%)
Ti - XPS Data:
70
60
50
40
30
20
0
15
30
Etch time (sec)
45
60
80
70
60
50
40
30
0
15
30
45
Etch time (Sec)
From XPS data shows that the atomic concentration of O2 is more on the surface
and with depth it is decreasing and the atomic concentration of Ti is increasing
with depth.
60
Hafnium (Hf)
Process parameter:
Base pressure:
3.26E-6 Torr.
Deposition pressure:
1.9E-6 Torr.
Rate of deposition:
3 Å/s.
Measured thickness (Dektak):
18.23nm.
Sheet Resistance:
145.5 Ω/□.
Resistivity:
145.5 X 18.23E-9= 2.65 µΩ m.
Hf - XRD Data:
Nickel (Ni)
Process parameter:
Base pressure:
Deposition pressure:
Rate of deposition:
Measured thickness (Dektak):
Annealing:
3.2E-6 Torr.
8E-6 Torr.
1 Å/s.
65.3 nm.
Annealed at 450°C.
Sheet Resistance before annealing:
5.09 Ω/□.
Sheet Resistance after annealing:
5.75 Ω/□.
Resistivity after annealing:
37.5E-8 Ω m.
Ni - XRD Data (Before annealing):
Ni - XRD Data (After annealing):
Aluminium Oxide (Al203):
Process parameter:
Base pressure:
4E-6 Torr.
Deposition pressure:
8.71E-6 Torr.
Rate of deposition:
1 Å/s.
Measured thickness (Dektak):
150.5 nm.
Measured thickness (Ellipsometer):
ANALYSIS:
133 nm.
Aluminium Oxide (Al203) with O2:
Process parameter:
Base pressure:
Deposition pressure:
Rate of deposition:
Flow rate (O2):
3E-6 Torr.
4.86 E-5 Torr.
1 Å/s.
1 sccm (O2 started 1 min before
deposition).
Measured thickness (Dektak):
150 nm.
Measured thickness (Ellipsometer):
144 nm.
ANALYSIS:
Silicon Dioxide (SiO2):
Process parameter:
Base pressure:
2E-6 Torr.
Deposition pressure:
6E-6 Torr.
Rate of deposition:
Measured thickness (Dektak):
1 Å/s.
134 nm.
Silicon Dioxide (SiO2) with O2:
Process parameter:
Base pressure:
2E-6 Torr.
Deposition pressure:
4E-5 Torr.
Rate of deposition:
Measured thickness (Dektak):
1 Å/s.
150 nm.
ANALYSIS:
SiO2 Vs. SiO2 with O2
Titanium Oxide (TiO2):
Process parameter:
Base pressure:
Deposition pressure:
Rate of deposition:
4.8E-6 Torr.
4E-5 Torr.
1 Å/s.
Flow rate (O2):
1 sccm.
Measured thickness (Ellipsometer):
77.6 nm
wavelength Vs. refractive index and
extinction coefficient:
ANALYSIS:
3.0
Refractive Index
Extinction Coefficient
N
K
631.45
2.057
1.007 E-005
633.03
2.056
9.813 E-006
1.2
1.0
0.8
2.6
0.6
2.4
0.4
2.2
0.2
2.0
0.0
200
300
400
500
600
700
Wavelength (nm)
800
900
1000
1100
Extinction Coefficient
Refractive Index
2.8
Wavelength (nm)